Structure Optimization of Multiple Quantum Wells in Near Ultraviolet Light Emitting Diodes with 380 nm Wavelength

LI Mei-jiao; LI Kai; ZHU Ming-jun; GUO Zhi-you; SUN Hui-qing

doi:10.3788/fgxb20133405.0623

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Structure Optimization of Multiple Quantum Wells in Near Ultraviolet Light Emitting Diodes with 380 nm Wavelength

更新时间：2020-08-12

- Structure Optimization of Multiple Quantum Wells in Near Ultraviolet Light Emitting Diodes with 380 nm Wavelength
- Chinese Journal of Luminescence Vol. 34, Issue 5, Pages: 623-628(2013)
- 作者机构：
  
  广东省微纳光子功能材料与器件重点实验室华南师范大学光电子材料与技术研究所,广东广州,510631
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20133405.0623
  CLC： TN312.8
- Received：08 February 2013，
  
  Revised：02 April 2013，
  
  Published Online：22 March 2013，
  
  Published：10 May 2013
- 稿件说明：
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李梅娇, 李凯, 朱明军, 郭志友, 孙慧卿. 近紫外380 nm发光二极管的量子阱结构优化[J]. 发光学报, 2013,34(5): 623-628

LI Mei-jiao, LI Kai, ZHU Ming-jun, GUO Zhi-you, SUN Hui-qing. Structure Optimization of Multiple Quantum Wells in Near Ultraviolet Light Emitting Diodes with 380 nm Wavelength[J]. Chinese Journal of Luminescence, 2013,34(5): 623-628
李梅娇, 李凯, 朱明军, 郭志友, 孙慧卿. 近紫外380 nm发光二极管的量子阱结构优化[J]. 发光学报, 2013,34(5): 623-628 DOI： 10.3788/fgxb20133405.0623.

LI Mei-jiao, LI Kai, ZHU Ming-jun, GUO Zhi-you, SUN Hui-qing. Structure Optimization of Multiple Quantum Wells in Near Ultraviolet Light Emitting Diodes with 380 nm Wavelength[J]. Chinese Journal of Luminescence, 2013,34(5): 623-628 DOI： 10.3788/fgxb20133405.0623.

摘要

模拟分析了有源区不同垒层对380 nm近紫外发光二极管的内量子效率、电子空穴浓度分布、辐射复合效率等产生的影响。有源区垒层材料分别选用GaN、Al

0.1

0.9

N、Al

0.1

0.9

N/Al

0.15

0.85

N/Al

0.1

0.9

其中3层AlGaN的厚度比分别为6 nm/8 nm/6 nm和7 nm/6 nm/7 nm。对比分析发现

与GaN垒层相比

选用AlGaN系列垒层可以将更多的载流子限制在有源区内

空穴浓度可以提高近一个数量级

辐射复合效率可以提高2~10倍;3层AlGaN垒层相对于单一AlGaN垒层

载流子分布更加均匀

辐射复合效率可以提高7倍以上

内量子效率可以提高14.5%;采用不同厚度比的3层AlGaN垒层结构可以微调能带的倾斜程度

进一步减小极化效应。可以调节合适的厚度比减小极化效应对于载流子分布及内量子效率的影响。

Abstract

The influence of multiple quantum wells with different barriers on the characteristics of the near ultraviolet light emitting diodes was numerically investigated. Using single GaN

single Al

0.1

0.9

trilaminar Al

0.1

0.9

N/Al

0.15

0.85

N/Al

0.1

0.9

N as barriers to study the characteristics of internal quantum efficiency

carriers concentration and radiative recombination rate. For trilaminar Al

0.1

0.9

N/ Al

0.15

0.85

N/Al

0.1

0.9

N barrier

choose two different thickness ratio

6 nm/8 nm/6 nm and 7 nm/6 nm/7 nm. The simulation results show that LEDs with AlGaN barriers have better performance than GaN barrier LED. For AlGaN barrier LEDs

more carriers can be confined in active region

especially hole concentration

can improve one order of magnitude approximately. The radiative recombination rate can increase 2~10 times. Compared with single AlGaN barrier LED

in trilaminar AlGaN barrier LEDs the carriers concentration is more uniform. And the radiative recombination rate increases about 7 times

the internal quantum efficiency improves 14.5%. The different thickness ratio of trilaminar AlGaN barrier LED can fine adjust the inclination of energy band

then reduce the negative effects on carriers concentration and internal efficiency caused by polarization.

关键词

Keywords

references

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