Analysis of Total Dose Radiation Test for Linear CCD KLI-2113

ZHANG Hang; LIU Dong-bin

doi:10.3788/fgxb20133405.0611

您当前的位置：

首页 >

文章列表页 >

Analysis of Total Dose Radiation Test for Linear CCD KLI-2113

更新时间：2020-08-12

- Analysis of Total Dose Radiation Test for Linear CCD KLI-2113
- Chinese Journal of Luminescence Vol. 34, Issue 5, Pages: 611-616(2013)
- 作者机构：
  
  中国科学院长春光学精密机械与物理研究所,吉林长春,中国,130033
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20133405.0611
  CLC： TN386.5
- Received：25 January 2013，
  
  Revised：01 March 2013，
  
  Published Online：15 March 2013，
  
  Published：10 May 2013
- 稿件说明：
移动端阅览
张航, 刘栋斌. 线阵探测器KLI-2113总剂量辐照性能试验分析[J]. 发光学报, 2013,34(5): 611-616

ZHANG Hang, LIU Dong-bin. Analysis of Total Dose Radiation Test for Linear CCD KLI-2113[J]. Chinese Journal of Luminescence, 2013,34(5): 611-616
张航, 刘栋斌. 线阵探测器KLI-2113总剂量辐照性能试验分析[J]. 发光学报, 2013,34(5): 611-616 DOI： 10.3788/fgxb20133405.0611.

ZHANG Hang, LIU Dong-bin. Analysis of Total Dose Radiation Test for Linear CCD KLI-2113[J]. Chinese Journal of Luminescence, 2013,34(5): 611-616 DOI： 10.3788/fgxb20133405.0611.

摘要

针对Kodak公司的商用CCD探测器KLI-2113进行了总剂量为30 krad(Si)的

Co-辐射试验。对比辐射前后CCD的主要参数变化

分析了总剂量辐射对CCD工作性能的影响

并研究了总剂量辐射导致CCD暗电流增大、电荷转移效率降低以及图像噪声增加等现象的内在机理

为后续CCD抗总剂量辐射加固提供依据和参考。

Abstract

This paper researched the Cobalt 60- total dose radiation test for the CCD KLI-2113 from Kodak Company by comparing the main parameters shift before and after radiation.The effect of the total dose radiation on the performance of CCD was analyzed. The results indicate that the radiation induces the increase of the dark current

the decrease of charge transfer efficiency

the increase of picture noise. There result provides reference for the total dose resistant radiation hardening in future.

关键词

Keywords

references

Boyle W S, Smith G E. Charge coupled semiconductor devices [J]. The Bell System Technical Journal, 1970, 49(1):587-593.[2] Zhang H, Liu D B, Li W, et al. Research of noise at analog front end of CCD imaging system [J]. Modern Electronic Technique (现代电子技术), 2011, 34(24):113-117 (in Chinese).[3] Guo W Q, Wan Z, Chang L, et al. Noise suppression of area array CCD signal acquisition [J]. Chin. J. Lumin.(发光学报), 2008, 29(1):204-208 (in Chinese).[4] Pickel J C, Kalma A H, Hopkinson G R, et al. Radiation effect on photonic imagers: A historical perspective [J]. IEEE Trans. Nucl. Sci., 2003, 50(3):671-688.[5] Hopkinson G R. Radiation effects on solid-state imaging devices [J]. Radiation Phys. & Chem., 1994, 43(1/2):79-91.[6] Hopkinson G R, Dale C J. Proton effects in charge-coupled devices [J]. IEEE Trans. Nucl. Sci., 1996, 43(2):614-627.[7] Janesick J, Elliott T, Pool F. Radiation damage in scientific charge-coupled devices [J]. IEEE Trans. Nucl. Sci., 1989, 36(1):572-578.[8] Xue X C, Han C S, Xue D L, et al. Increasing dynamic range of space push-broom remote sensing camera by two-row TDI CCD [J]. Optics and Precision Engineering (光学精密工程), 2012, 20(12):2791-2795 (in Chinese).[9] Wang Z J, Tang B Q, Xiao Z G, et al. Progress of radiation damage effects and hardening technology on CCD [J]. Semiconductor Optoelectronics (半导体光电), 2009, 30(6):797-802 (in Chinese).[10] Wang Z J, Tang B Q, Xiao Z G, et al. The analysis of mechanism on ionization radiation damage effects on CCD [J]. Nucl. Electron. & Detection Tech.(核电子学与探测技术), 2009, 29(3):565- 570 (in Chinese).[11] Wang X, Chen X, Zhang L G, et al. Development of CCD camera simulation source for remote sensing satellite[J]. Opt. Precision Eng.(光学精密工程), 2012, 20(11):2559-2569 (in Chinese).[12] Saks N S. Interface state trapping and dark current generation in buried channel charge-coupled devices [J]. J. Appl. Phys., 1982, 53(3):1745-1753.[13] Hopkinson G R. Cobalt 60 and proton radiation effects on large format, 2-D, CCD arrays for an earth imaging application [J]. IEEE Trans. Nucl. Sci., 1992, 39(6):2018-2025.[14] Roy T, Watts S J, Wright D. Radiation damage effects on imaging charge coupled devices [J]. Nuclear Instruments and Methods A, 1989, 275(3):545-557.[15] Duan X Y, Qiao Y F, Wang Y W, et al. Design of optical system for Fizeau-type synthetic aperture telescope [J]. Chin. Opt.(中国光学), 2012, (4):380-387 (in Chinese).

Views

108

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

All-inorganic p-i-n Photodetector Based on Lead-free CuSCN/Cs₃Bi₂I₆Br₃Nanofilm

Temporal Evolution Characteristics of CCD Detector Based on Different Laser Loading Methods

Spectral Response and Dark Current of p-i-n Type and Schottky Barrier GaN-based Ultraviolet Detectors

Temperature Effects on Performance Parameters in 4T CMOS Image Sensor

Neutron Irradiation Induced Displacement Damage Effects on Charge Coupled Device

Related Author

LI Yue-bin

XIE Guo-ao

WANG Ya-qi

LI Gen

ZENG Min

HUANG Hao

DENG He-ming

HU Yong-ming

Related Institution

Hubei Key Laboratory of Ferro & Piezoelectric Materials and Devices， College of Physics and Electronic Science， Hubei University

Ministry⁃of⁃Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules， Hubei University

State Key Laboratory of Pulsed Power Laser Technology

Department of Physics, China Agriculture University

State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰