Effect of Showerhead Gap Position on The Growth of InGaN/GaN MQWs

KE Yun-jie; LIANG Hong-wei; SHEN Ren-sheng; SONG Shi-wei; XIA Xiao-chuan; LIU Yang; ZHANG

doi:10.3788/fgxb20133404.0469

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Effect of Showerhead Gap Position on The Growth of InGaN/GaN MQWs

更新时间：2020-08-12

- Effect of Showerhead Gap Position on The Growth of InGaN/GaN MQWs
- Chinese Journal of Luminescence Vol. 34, Issue 4, Pages: 469-473(2013)
- 作者机构：
  
  1. 大连理工大学物理与光电工程学院, 辽宁大连 116024
  2. 吉林大学电子科学与工程学院集成光电子学国家重点实验室, 吉林长春 130012
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20133404.0469
  CLC： TN304.2
- Received：04 December 2012，
  
  Revised：12 January 2013，
  
  Published Online：18 January 2013，
  
  Published：10 April 2013
- 稿件说明：
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柯昀洁, 梁红伟, 申人升, 宋世巍, 夏晓川, 柳阳, 张克雄, 杜国同. 喷淋头高度对InGaN/GaN量子阱生长的影响[J]. 发光学报, 2013,34(4): 469-473

KE Yun-jie, LIANG Hong-wei, SHEN Ren-sheng, SONG Shi-wei, XIA Xiao-chuan, LIU Yang, ZHANG Ke-xiong, DU Guo-tong. Effect of Showerhead Gap Position on The Growth of InGaN/GaN MQWs[J]. Chinese Journal of Luminescence, 2013,34(4): 469-473
柯昀洁, 梁红伟, 申人升, 宋世巍, 夏晓川, 柳阳, 张克雄, 杜国同. 喷淋头高度对InGaN/GaN量子阱生长的影响[J]. 发光学报, 2013,34(4): 469-473 DOI： 10.3788/fgxb20133404.0469.

KE Yun-jie, LIANG Hong-wei, SHEN Ren-sheng, SONG Shi-wei, XIA Xiao-chuan, LIU Yang, ZHANG Ke-xiong, DU Guo-tong. Effect of Showerhead Gap Position on The Growth of InGaN/GaN MQWs[J]. Chinese Journal of Luminescence, 2013,34(4): 469-473 DOI： 10.3788/fgxb20133404.0469.

摘要

在Aixtron 32近耦合喷淋式金属有机化学气相沉积反应室中

调节喷淋头与基座之间的距离

制备了7

25 mm间距的4个InGaN/GaN量子阱样品。利用原子力显微镜(AFM)、X射线衍射(XRD)对样品表面形貌及界面质量进行了表征。研究表明:随着高度的增加

量子阱的表面粗糙度减少

垒/阱界面陡峭度逐步变差

垒层和阱层厚度及阱层In组分含量减少;增加高度至一定值后

量子阱厚度及In组分趋于稳定。此外

对比垒层和阱层的厚度变化

垒层厚度的变化幅度较阱层更为明显。

Abstract

A series of InGaN/GaN multi-quantum wells(MQWs) samples were grown with four different showerhead gap position using Aixtron 32 close-coupled showerhead MOCVD system. In the reactor

the showerhead gap position of 7

18 and 25 mm were selected to study the effect of gap position on the growth of InGaN/GaN MQWs. The surface morphology

interface quality of samples were characterized by atomic force microscopy(AFM) and X-ray diffraction(XRD). The results show that the roughness of MQWs decreased and the interfacial structure between InGaN and GaN deteriorated simultaneously with the increasing of the showerhead gap position. The thickness of GaN barrier layer and InGaN well layer also decreased

as well as the In composition. However

when the showerhead gap position was enhanced to a certain level

both the variation in thickness of the MQWs and the In composition were reduced and tended to stay stable. Meanwhile

compared with the thickness variation of barrier layer and well layer

the thickness variation of barrier layer was more remarkable.

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Keywords

references

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