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1. 浙江工业大学之江学院 理学系,浙江 杭州,310024
2. 浙江大学物理系 硅材料国家重点实验室,浙江 杭州,310027
Received:14 November 2012,
Revised:01 January 2013,
Published:10 March 2013
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徐天宁, 卢忠, 隋成华, 吴惠桢. Al/ZnO:Al薄膜结构的荧光增强效应[J]. 发光学报, 2013,34(3): 356-360
XU Tian-ning, LU Zhong, SUI Chen-hua, WU Hui-zhen. Emission Enhancement from Al-capped ZnO:Al Films[J]. Chinese Journal of Luminescence, 2013,34(3): 356-360
徐天宁, 卢忠, 隋成华, 吴惠桢. Al/ZnO:Al薄膜结构的荧光增强效应[J]. 发光学报, 2013,34(3): 356-360 DOI: 10.3788/fgxb20133403.0356.
XU Tian-ning, LU Zhong, SUI Chen-hua, WU Hui-zhen. Emission Enhancement from Al-capped ZnO:Al Films[J]. Chinese Journal of Luminescence, 2013,34(3): 356-360 DOI: 10.3788/fgxb20133403.0356.
利用物理气相沉积设备制备了Al/ZnO:Al薄膜样品
研究了该薄膜结构的发光特性。结果表明
在ZnO:Al薄膜表面镀一层Al岛薄膜可以增强其带边荧光
同时在475 nm附近产生蓝光峰。通过在Al岛薄膜和ZnO:Al薄膜之间引入一层5 nm的Ta
2
O
5
绝缘层可以使ZnO:Al薄膜的带边荧光和蓝光显著增强
并随着Ta
2
O
5
绝缘层厚度的增大而减弱。通过对Al/ZnO:Al样品进行退火处理可以使带边荧光和蓝光峰分别增强9倍和83倍。基于局域表面等离子体共振理论
计算了Al/ZnO:Al纳米结构的光学散射和吸收截面曲线。实验结果与理论计算相一致。
Al/ZnO:Al film structures were fabricated by physical vapor deposition
and the optical properties of which were studied. It was found that Al capped ZnO:Al can enhance the band gap emission and generate blue emission (475 nm). When a 5 nm Ta
2
O
5
spacer was inserted between Al and ZnO:Al
further enhancements were observed for both band gap and blue emission. The enhancement raito decreases with the thickness of the Ta
2
O
5
spacer. Moreover
the band-edge emission and blue emission increase with annealing temperature and the max enhancement ratio is 9 and 83
respectively. According to localized surface plasmon resonance theory
the scattering and absorption cross sections of Al/ZnO:Al were calculated. The theoretical results can interpret the experimental phenomena reasonably.
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