Performance Improvement of Blue InGaN Light-emitting Diode with A Special Designed Electron-blocking Layer

DING Bin-bin; ZHAO Fang; SONG Jing-jing; XIONG Jian-yong; ZHENG Shu-wen; YU Xiao-peng; XU

doi:10.3788/fgxb20133403.0345

您当前的位置：

首页 >

文章列表页 >

Performance Improvement of Blue InGaN Light-emitting Diode with A Special Designed Electron-blocking Layer

更新时间：2020-08-12

- Performance Improvement of Blue InGaN Light-emitting Diode with A Special Designed Electron-blocking Layer
- Chinese Journal of Luminescence Vol. 34, Issue 3, Pages: 345-350(2013)
- 作者机构：
  
  华南师范大学光电子材料与技术研究所,广东广州,510631
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20133403.0345
  CLC： TM23;O242.1
- Received：21 December 2012，
  
  Revised：24 January 2013，
  
  Published：10 March 2013
- 稿件说明：
移动端阅览
丁彬彬, 赵芳, 宋晶晶, 熊建勇, 郑树文, 喻晓鹏, 许毅钦, 周德涛, 张涛, 范广涵. 新型电子阻挡层结构对蓝光InGaN发光二极管性能的提高[J]. 发光学报, 2013,34(3): 345-350

DING Bin-bin, ZHAO Fang, SONG Jing-jing, XIONG Jian-yong, ZHENG Shu-wen, YU Xiao-peng, XU Yi-qin, ZHOU De-tao, ZHANG Tao, FAN Guang-han. Performance Improvement of Blue InGaN Light-emitting Diode with A Special Designed Electron-blocking Layer[J]. Chinese Journal of Luminescence, 2013,34(3): 345-350
丁彬彬, 赵芳, 宋晶晶, 熊建勇, 郑树文, 喻晓鹏, 许毅钦, 周德涛, 张涛, 范广涵. 新型电子阻挡层结构对蓝光InGaN发光二极管性能的提高[J]. 发光学报, 2013,34(3): 345-350 DOI： 10.3788/fgxb20133403.0345.

DING Bin-bin, ZHAO Fang, SONG Jing-jing, XIONG Jian-yong, ZHENG Shu-wen, YU Xiao-peng, XU Yi-qin, ZHOU De-tao, ZHANG Tao, FAN Guang-han. Performance Improvement of Blue InGaN Light-emitting Diode with A Special Designed Electron-blocking Layer[J]. Chinese Journal of Luminescence, 2013,34(3): 345-350 DOI： 10.3788/fgxb20133403.0345.

摘要

分别对3种不种电子阻挡层的蓝光AlGaN LED进行数值模拟研究。3种阻挡层结构分别为传统AlGaN电子阻挡层

AlGaN-GaN-AlGaN电子阻挡层和Al组分渐变的AlGaN-GaN-AlGaN电子阻挡层。此外对这对三种器件的活性区的载流子浓度、能带图、静电场和内量子效率进行比较和分析。研究结果表明

相较于传统AlGaN和AlGaN-GaN-AlGaN两种电子阻挡层的LED

具有Al组分渐变的AlGaN-GaN-AlGaN电子阻挡层结构的LED具有较高的空穴注入效率、较低的电子外溢现象和较小的静电场(活性区)。同时

具有Al组分渐变的AlGaN-GaN-AlGaN电子阻挡层结构的LED的efficiency droop现象也得到一定的缓解。

Abstract

Three kinds of electron-blocking layer (EBL) AlGaN based LED were compared numerically. They are conventional AlGaN EBL

AlGaN-GaN-AlGaN (AGA) and gradual Al composition AlGaN-GaN-AlGaN (GAGA) EBL. Their porfermance were analyzed involved carrier concentration in the active region

energy band diagram

electrostatic field and internal quantum efficiency (IQE). The results indicate that the LED with an GAGA EBL exhibits a better hole injection efficiency

a more peaceable efficiency droop

a lower electron leakage

and a smaller electrostatic field than the LED with a conventional AlGaN EBL or with an AGA EBL.

关键词

Keywords

references

Muramoto Y, Kimura M, Dempo A, et al. High-efficiency UV LEDs and RGB white LEDs for lighting and LCD backlights [J]. J. Soc. Inf. Disp., 2011, 19(12):907-912.[2] Pimputkar S, Speck J, DenBaars S P, et al. Prospects for LED lighting [J]. Nat. Photonics, 2009, 3(4):180-182.[3] Horiuchi N. Light-emitting diodes: Natural white light [J]. Nat. Photonics, 2010, 4(11):738.[4] Mukai T, Yamada M, Nakamura S. Characteristics of InGaN-based UV/blue/green/amber/red light-emitting diodes [J]. Jpn. J. Appl. Phys., Part 1, 1999, 38:3976-3981.[5] Sun W, Shatalov M, Deng J, et al. Efficiency droop in 245-247 nm AlGaN light-emitting diodes with continuous wave 2 mW output power [J]. Appl. Phys. Lett., 2010, 96(6):061102-1-3.[6] Kim M H, Schubert M F, Dai Q, et al. Origin of efficiency droop in GaN-based light-emitting diodes [J]. Appl. Phys. Lett., 2007, 91(18):183507-1-3.[7] Schubert M F, Chhajed S, Kim J K, et al. Effect of dislocation density on efficiency droop in GaInN/GaN light-emitting diodes [J]. Appl. Phys. Lett., 2007, 91(23):231114-1-3.[8] Rozhansky I V, Zakheim D A. Analysis of dependence of electroluminescence efficiency of AlInGaN LED heterostructures on pumping [J]. Phys. Status Solidi C, 2006, 3(6):2160-2164.[9] Delaney K T, Rinke P and Van de Walle C G. Auger recombination rates in nitrides from first principles [J]. Appl. Phys. Lett., 2009, 94(19):191109-1-3.[10] Shen Y C, Mueller G O, Watanabe S, et al. Auger recombination in InGaN measured by photoluminescence [J]. Appl. Phys. Lett., 2007, 91(14):141101-1-3.[11] Rozhansky I V, Zakheim D A. Analysis of the causes of the decrease in the electroluminescence efficiency of AlGaInN light-emitting-diode heterostructures at high pumping density [J]. Semiconductors, 2006, 40(7):839-845.[12] Ghazai A J, Thahab S M, Hassan H A, et al. Quaternary ultraviolet AlInGaN MQW laser diode performance using quaternary AlInGaN electron blocking layer [J]. Opt. Exp., 2011, 19(10):9245-9254.[13] Kuo Y K, Chang J Y, Tsai M C, et al. Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers [J]. Appl. Phys. Lett., 2009, 95(1):011116-1-3.[14] Fu Y K, Jiang R H, Lu Y H, et al. The effect of trimethylgallium flows in the AlInGaN barrier on optoelectronic characteristics of near ultraviolet light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy [J]. Appl. Phys. Lett., 2011, 98(12):121115-1-3.[15] Song J J, Zhang Y Y, Zhao F, et al. Effect of the number of quantum wells on InGaN/AlGaN LED [J]. Chin. J. Lumin. (发光学报),2012, 33(12):1368 - 1372 (in Chinese).[16] Zhao H, Liu G, Zhang J, et al. Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells [J]. Opt. Exp., 2011, 19(4):A991- 1007.[17] Liao C T, Tsai M C, Liou B T, et al. Improvement in output power of a 460 nm InGaN light-emitting diode using staggered quantum well [J]. J. Appl. Phys., 2010, 108(6):063107-1-6.[18] Zhao H and Tansu N. Optical gain characteristics of staggered InGaN quantum wells lasers [J]. J. Appl. Phys., 2010, 107(11):113110-1-3.[19] Zhang Y Y, Yin Y A. Performance enhancement of blue light-emitting diodes with a special designed AlGaN/GaN superlattice electron-blocking layer [J]. Appl. Phys. Lett., 2011 99(22):221103-1-3.[20] Kuo Y K, Chang J Y, Tsai M C. Enhancement in hole-injection efficiency of blue InGaN light-emitting diodes from reduced polarization by some specific designs for the electron blocking layer [J]. Opt. Lett., 2010, 35(19):3285-3287.[21] Xia C S, Z. M. Simon Li, Lu W, et al. Efficiency enhancement of blue InGaN/GaN light-emitting diodes with an AlGaN-GaN-AlGaN electron blocking layer [J]. J. Appl. Phys., 2012, 111(9):094503-1-3.[22] Zhao F, Zhang Y Y, Song J J, et al. High internal quantum efficiency blue light emitting diodes with triangular shaped InGaN/ GaN multiple quantum Wells [J]. Chin. J. Lumin. (发光学报),2013, 34(1): 66 - 72 (in English).[23] Chichibu S F, Abare A C, Minsky M S, et al. Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures [J]. Appl. Phys. Lett., 1998, 73(14):2006-1-3. [24] Kuokstis E, Yang J W, Simin G, et al. Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells [J]. Appl. Phys. Lett., 2002, 80(6):977-1-3.[25] Wang C H, Ke C C, Lee C Y, et al. Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer [J]. Appl. Phys. Lett., 2010, 97(26):261103-1-3.

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Design of a High-power 2.3 μm Thulium-doped Fluorotellurite Glass Fiber Laser

Optimal Design and Simulation of High Power Tm³⁺ Self-similar Pulse Laser

270/290/330 nm AlGaN-based Deep Ultraviolet Light-emitting Diodes with Different Al Content in Quantum Wells and Barriers

Simulation and Design of High Efficiency InGaN/ AlInGaN Based Light-emitting Diodes

Orientation Effects on Heat Dissipation Performance of Plate-fin Heat Sink for LED Application

Related Author

QIN Guanshi

QIN Weiping

ZHANG Chuanze

WANG Junjie

JIA Zhixu

REN Yingshuai

Lu-na ZHANG

Wen-guo HAN

Related Institution

State Key Laboratory of Integrated Optoelectronics， JLU Region， College of Electronic Science and Engineering， Jilin University

Key Laboratory of All Optical Network and Advanced Telecommunication Network of Ministry of Education, Institute of Lightwave Technology, Beijing Jiaotong University

School of Science, Jiangnan University

Schoo of Automobile and Transportation, Wuxi Institute of Technology

Institute of Optoelectronic Material and Technology, South China Normal University

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰