Effect of Channel Layer Thickness on The Device Characteristics of Room Temperature Fabricated In2O3 Thin-film Transistors

JIAO Yang; ZHANG Xin-an; ZHAI Jun-xia; YU Xian-kun; DING Ling-hong; ZHANG Wei-feng

doi:10.3788/fgxb20133403.0324

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Effect of Channel Layer Thickness on The Device Characteristics of Room Temperature Fabricated In₂O₃ Thin-film Transistors

更新时间：2020-08-12

- Effect of Channel Layer Thickness on The Device Characteristics of Room Temperature Fabricated In₂O₃ Thin-film Transistors
- Chinese Journal of Luminescence Vol. 34, Issue 3, Pages: 324-328(2013)
- 作者机构：
  
  河南大学物理与电子学院河南省光伏材料重点实验室,河南开封 475004
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20133403.0324
  CLC： O472.4
- Received：27 November 2012，
  
  Revised：20 December 2012，
  
  Published：10 March 2013
- 稿件说明：
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焦洋, 张新安, 翟俊霞, 喻先坤,丁玲红, 张伟风. 沟道层厚度对室温制备的In2O3薄膜晶体管器件性能的影响[J]. 发光学报, 2013,34(3): 324-328

JIAO Yang, ZHANG Xin-an, ZHAI Jun-xia, YU Xian-kun, DING Ling-hong, ZHANG Wei-feng. Effect of Channel Layer Thickness on The Device Characteristics of Room Temperature Fabricated In2O3 Thin-film Transistors[J]. Chinese Journal of Luminescence, 2013,34(3): 324-328
焦洋, 张新安, 翟俊霞, 喻先坤,丁玲红, 张伟风. 沟道层厚度对室温制备的In2O3薄膜晶体管器件性能的影响[J]. 发光学报, 2013,34(3): 324-328 DOI： 10.3788/fgxb20133403.0324.

JIAO Yang, ZHANG Xin-an, ZHAI Jun-xia, YU Xian-kun, DING Ling-hong, ZHANG Wei-feng. Effect of Channel Layer Thickness on The Device Characteristics of Room Temperature Fabricated In2O3 Thin-film Transistors[J]. Chinese Journal of Luminescence, 2013,34(3): 324-328 DOI： 10.3788/fgxb20133403.0324.

摘要

在室温下采用直流磁控溅射以SiO

/Si为衬底制备了不同沟道层厚度的底栅式In

薄膜晶体管

讨论了沟道层厚度对底栅In

薄膜晶体管的电学性能的影响。实验结果表明:器件的特性与沟道层厚度有关

最优沟道层厚度的In

薄膜晶体管为增强型

其阈值电压为2.5 V

开关电流比约为10

场效应迁移率为6.2 cm

-1

。

Abstract

thin-film transistors (TFTs) with different channel thicknesses were fabricated on SiO

/Si substrates by DC magnetron sputtering at room temperature. The effects of the channel thickness on the electrical properties of In

TFTs with bottom-gate configuration were investigated. The performance of devices was found to be thickness dependent. The In

TFT with the optimized channel thickness exhibites enhancement mode characteristics

the threshold voltage is 2.5 V

the current on-off ratio is 10

and the field-effect mobility is 6.2 cm

-1

关键词

Keywords

references

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