The Optical-thermal Performance Improvements of HP-LED Interconnected by Au80Sn20

YIN Lu-qiao; WENG Fei; FU Mei-juan; SONG Peng; ZHANG Jian-hua

doi:10.3788/fgxb20133403.0314

您当前的位置：

首页 >

文章列表页 >

The Optical-thermal Performance Improvements of HP-LED Interconnected by Au80Sn20

更新时间：2020-08-12

- The Optical-thermal Performance Improvements of HP-LED Interconnected by Au80Sn20
- Chinese Journal of Luminescence Vol. 34, Issue 3, Pages: 314-318(2013)
- 作者机构：
  
  1. 上海大学新型显示技术及应用集成教育部重点实验室上海,200072
  2. 上海大学机电工程与自动化学院上海,200072
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20133403.0314
  CLC： TN364+.2
- Received：02 December 2012，
  
  Revised：18 January 2013，
  
  Published：10 March 2013
- 稿件说明：
移动端阅览
殷录桥, 翁菲, 付美娟, 宋鹏, 张建华. 金锡共晶互连对HP-LED光热性能的改善[J]. 发光学报, 2013,34(3): 314-318

YIN Lu-qiao, WENG Fei, FU Mei-juan, SONG Peng, ZHANG Jian-hua. The Optical-thermal Performance Improvements of HP-LED Interconnected by Au80Sn20[J]. Chinese Journal of Luminescence, 2013,34(3): 314-318
殷录桥, 翁菲, 付美娟, 宋鹏, 张建华. 金锡共晶互连对HP-LED光热性能的改善[J]. 发光学报, 2013,34(3): 314-318 DOI： 10.3788/fgxb20133403.0314.

YIN Lu-qiao, WENG Fei, FU Mei-juan, SONG Peng, ZHANG Jian-hua. The Optical-thermal Performance Improvements of HP-LED Interconnected by Au80Sn20[J]. Chinese Journal of Luminescence, 2013,34(3): 314-318 DOI： 10.3788/fgxb20133403.0314.

摘要

随着功率型LED(HP-LED)对散热的要求越来越高

传统导电银胶越来越难以满足LED的高散热要求。虽然共晶互连工艺是微电子领域中的一种有效的散热互连方法

但是由于LED的特殊性

该工艺在LED互连封装中的性能改善研究还比较少。本文对金锡共晶互连、锡膏互连和银胶互连的3种LED器件分别进行了光学、热学以及剪切力等方面的测试分析研究

结果表明:底部与顶部同时加热的金锡共晶工艺互连的LED器件可以有效地改善仅底部加热共晶互连层中的空洞缺陷

在1 000 mA电流条件下

相对于锡膏、银胶互连的LED器件具有较低的热阻、较稳定的峰值波长偏移、较强的互连层剪切力等性能。金锡共晶互连工艺是一种可以有效改善大功率LED散热及互连强度的方法。

Abstract

Thermal management is the challenge of HP-LED packaging. Silver paste is the interconnect material for common LED

but it can hardly dissipate the heat effectively for HP-LED now

especially for multichip HP-LED. Gold-tin (80Au20Sn) eutectic interconnect is a method can improve the heat dissipation

but the eutectic process is complicated as the HP-LED top surface is an emitting surface. In order to investigate the thermal performance improvements of HP-LED interconnected by Au80Sn20

HP-LEDs interconnected by Au80Sn20

solder paste and silver paste are prepared. Firstly

the effects of heating method between bottom and top heating together with bottom heating only are investigated. Secondly

the thermal resistance comparison

the wavelength shift between 50 mA and 1 000 mA

the shear force test are investigated respectively. The results show that the thermal resistance of HP-LED interconnected by Au80Sn20 is obviously lower than that of the HP-LED interconnected by solder paste and silver paste. The wavelengh shift of HP-LED interconnected by Au80Sn20 is the smallest; the shear force results show the HP-LEDs interconnected by Au80Sn20 is the best. Based on the above tested results

the eutectic interconnect process is an effective method to improve the HP-LED heat dissipation.

关键词

Keywords

references

Teeba N, Kean Yew L, Chin Keng L, et al. Study on the variation in thermal resistance and junction temperature of GaN based LEDs using thermal transient measurement[C]//3rd Asia Symposium on Quality Electronic Design, Minden, Malaysia: IEEE, 2011:310-314 .[2] Li X, Chen X, Yu D J, et al. Study on adhesive reliability of low-temperature sintered high power LED modules[C]//International Conference on Electronics Packaging, ICEPT 11st, Xian, China: IEEE, 2010:1371-1376.[3] Wang T, Lei G, Chen X, et al. Improved thermal performance of high-power LED by using low-temperature sintered chip attachment[C]//International Conference on Electronic Packaging Technology & High Density Packaging, ICEPT 10th, Beijing, China: IEEE, 2009:582-584.[4] Liou B H, Chen C M, Horng R H, et al. Improvement of thermal management of high-power GaN-based light-emitting diodes [J]. Microelectron. Reliab., 2012, 52(5):861-865.[5] Kim H H, Choi S H, Shin S H, et al. Thermal transient characteristics of die attach in high power LED PKG [J]. Microelectron. Reliab., 2008, 48(3):445-454.[6] Xiong W, Yi Z C, Wang G, et al. Study on die attach and heat sink materials for high power LED [J]. Mater. Res. Appl.(材料研究与应用), 2010, 4(4):338-342 (in Chinese).[7] Liu H T, Qian K Y, Luo Y, et al. Analysis and measurement of thermal resistance induced by LED bonding [J]. Semicond. Optoelectron .(半导体光电),2009, 30(6):831-834 (in Chinese).[8] Kim D, Lee C C. Fluxless flip-chip Sn-Au solder interconnect on thin Si wafers and Cu laminated polyimide films [J]. Mater. Sci. Eng. A, 2006, 416(1/2):74-79.[9] Kim J S, Choi W S, Kim D, et al. Fluxless silicon-to-alumina bonding using electroplated Au-Sn-Au structure at eutectic composition [J]. Mater. Sci. Eng. A, 2007, 458(1/2):101-107.[10] Fleischer A S, Chang L H, Johnson B C. The effect of die attach voiding on the thermal resistance of chip level packages [J]. Microelectron. Reliab., 2006, 46(5/6):794-804.

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Improvement of Heat Dissipation Performance of Deep Ultraviolet LED

Thermal Analysis and Optimization of Vertical-cavity Surface-emitting Lasers with Different Packaging Structures

Performance of Semiconductor Laser Devices Packaged by Different AuSn Solder Composition

Thermal Characteristics Analysis of C-mount Sink Package Laser and Optimization of Heat Sink Structure

Thermal Performance of High-power Semiconductor Laser Packaged by Ceramic Submount

Related Author

CHANG Jianhua

ZHANG Huiguo

WANG Shuchang

LI Jiarui

XU Ru

YANG Jianan

ZHAO Jianguo

WANG Pinyao

Related Institution

School of Electronic and Information Engineering， Changshu Institute of Technology

School of Electronic and Information Engineering， Nanjing University of Information Science and Technology

Jlight Semiconductor Technology Co.，Ltd.

University of Chinese Academy of Sciences

State Key Laboratory of Luminescence Science and Applications， Changchun Institute of Optics， Fine Mechanics and Physics， Chinese Academy of Sciences

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰