Effects of Ar and H2 Plasma Treatment on The Surface Character and Luminescence Properties of GaAs Substrates

WANG Yun-hua; ZHOU Lu; QIAO Zhong-liang; GAO Xin; BO Bao-xue

doi:10.3788/fgxb20133403.0308

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Effects of Ar and H₂ Plasma Treatment on The Surface Character and Luminescence Properties of GaAs Substrates

更新时间：2020-08-12

- Effects of Ar and H₂ Plasma Treatment on The Surface Character and Luminescence Properties of GaAs Substrates
- Chinese Journal of Luminescence Vol. 34, Issue 3, Pages: 308-313(2013)
- 作者机构：
  
  长春理工大学高功率半导体激光国家重点实验室,吉林长春,130022
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20133403.0308
  CLC： O472.1
- Received：27 November 2012，
  
  Revised：12 January 2013，
  
  Published：10 March 2013
- 稿件说明：
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王云华, 周路, 乔忠良, 高欣, 薄报学. 氩、氢混合等离子体处理对GaAs表面性质及发光特性的影响[J]. 发光学报, 2013,34(3): 308-313

WANG Yun-hua, ZHOU Lu, QIAO Zhong-liang, GAO Xin, BO Bao-xue. Effects of Ar and H2 Plasma Treatment on The Surface Character and Luminescence Properties of GaAs Substrates[J]. Chinese Journal of Luminescence, 2013,34(3): 308-313
王云华, 周路, 乔忠良, 高欣, 薄报学. 氩、氢混合等离子体处理对GaAs表面性质及发光特性的影响[J]. 发光学报, 2013,34(3): 308-313 DOI： 10.3788/fgxb20133403.0308.

WANG Yun-hua, ZHOU Lu, QIAO Zhong-liang, GAO Xin, BO Bao-xue. Effects of Ar and H2 Plasma Treatment on The Surface Character and Luminescence Properties of GaAs Substrates[J]. Chinese Journal of Luminescence, 2013,34(3): 308-313 DOI： 10.3788/fgxb20133403.0308.

摘要

介绍了一种氩、氢混合等离子体清洗GaAs基片的实验工艺

深入研究了氩、氢等离子体清洗GaAs表面污染物和氧化层

并活化表面性能的基本原理

同时讨论了气体流量、溅射功率和清洗时间等不同溅射参数对等离子体清洗效果的影响。结果表明

在氩气和氢气流量分别为10 cm

/min和30 cm

/min

溅射功率为20 W

清洗时间为15 min的条件下

GaAs样品的光致发光强度提高达139.12%

样品表面的AsO键和GaO键基本消失。

Abstract

A new plasma cleaning process for GaAs surface using Ar/H

plasma was introduced in this paper. The process for Ar/H

plasma cleaning and surface activation was studied comprehensively to remove various contaminants

oxide layer on GaAs surface

and the influence of Ar/H

plasma under different plasma parameters was discussed in detail. The results show that GaAs samples treated under the condition of Ar

flow rate 10

30 cm

/min

sputtering power 20 W and cleaning time 15 min give the best cleaning effect

the photoluminescence intensity increases by 139.12%

and the AsO and GaO bonds on the GaAs surface decrease greatly.

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references

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