Fabrication of High-performance 400 nm Violet Light Emitting Diode

WANG Dong-sheng; GUO Wen-ping; ZHANG Ke-xiong; LIANG Hong-wei; SONG Shi-wei; YANG De-chao

doi:10.3788/fgxb20133402.0225

您当前的位置：

首页 >

文章列表页 >

Fabrication of High-performance 400 nm Violet Light Emitting Diode

paper | 更新时间：2020-08-12

- Fabrication of High-performance 400 nm Violet Light Emitting Diode
- Chinese Journal of Luminescence Vol. 34, Issue 2, Pages: 225-229(2013)
- 作者机构：
  
  1. 大连理工大学物理与光电学院,辽宁大连,116024
  2. 江苏新广联科技股份有限公司, 江苏无锡 214192
  3. 吉林大学电子科学与工程学院集成光电子国家重点实验室, 吉林长春 130012
  4. 中国科学院上海微系统与信息研究所信息功能材料国家重点实验室上海,200050
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20133402.0225
  CLC： TN383.1
- Received：20 November 2012，
  
  Revised：08 December 2012，
  
  Published：10 February 2013
- 稿件说明：
移动端阅览
王东盛, 郭文平, 张克雄, 梁红伟, 宋世巍, 杨德超, 申人升, 柳阳, 夏晓川, 骆英民, 杜国同. 400 nm高性能紫光LED的制作与表征[J]. 发光学报, 2013,34(2): 225-229

WANG Dong-sheng, GUO Wen-ping, ZHANG Ke-xiong, LIANG Hong-wei, SONG Shi-wei, YANG De-chao, SHEN Ren-sheng, LIU Yang, XIA Xiao-chuan, LUO Ying-min, DU Guo-tong. Fabrication of High-performance 400 nm Violet Light Emitting Diode[J]. Chinese Journal of Luminescence, 2013,34(2): 225-229
王东盛, 郭文平, 张克雄, 梁红伟, 宋世巍, 杨德超, 申人升, 柳阳, 夏晓川, 骆英民, 杜国同. 400 nm高性能紫光LED的制作与表征[J]. 发光学报, 2013,34(2): 225-229 DOI： 10.3788/fgxb20133402.0225.

WANG Dong-sheng, GUO Wen-ping, ZHANG Ke-xiong, LIANG Hong-wei, SONG Shi-wei, YANG De-chao, SHEN Ren-sheng, LIU Yang, XIA Xiao-chuan, LUO Ying-min, DU Guo-tong. Fabrication of High-performance 400 nm Violet Light Emitting Diode[J]. Chinese Journal of Luminescence, 2013,34(2): 225-229 DOI： 10.3788/fgxb20133402.0225.

摘要

利用金属有机物化学气相沉积技术在蓝宝石衬底表面制备了带有p-AlGaN电子阻挡层的400 nm高性能紫光InGaN多量子阱发光二极管。制作了3种紫光LED

分别带有不同p-AlGaN电子阻挡层结构:Al摩尔分数为9%的p-AlGaN电子阻挡层;Al摩尔分数为11%的p-AlGaN电子阻挡层;Al摩尔分数为20%的10对p-AlGaN/GaN超晶格电子阻挡层。带有高浓度Al电子阻挡层的紫光LED的光输出功率高于低浓度Al电子阻挡层的紫光LED。带有10对p-AlGaN/GaN超晶格电子阻挡层的紫光LED的光输出功率获得了极大的提高

在20 mA注入电流时测试得到的光输出功率为21 mW。此外

该LED同时显示了在高注入电流下接近线性的I-L特性曲线和在LED芯片表面均匀的发光强度分布。

Abstract

High-performance 400 nm violet InGaN multi-quantum-wells light-emitting diodes (LED) with p-AlGaN electron blocking layer were fabricated on sapphire substrate by metal organic chemical vapor deposition technique. Different kinds of p-AlGaN electron blocking layers were grown in three violet LEDs: bulk p-AlGaN with Al mole fraction of 9%

bulk p-AlGaN with Al mole fraction of 11% and super lattice p-AlGaN/GaN with Al mole fraction of 20%. The output power of violet LED with bulk p-AlGaN(11%) is higher than the LED with bulk p-AlGaN(9%). Typically

the output power of the LED with 10 pairs of p-AlGaN/GaN super lattice electron blocking layer has been greatly improved. A LED with an output power of 21 mW at an injection current of 20 mA is achieved. In additional

the LED also shows an almost linear I-L characteristics at high injection current and uniform intensity mapping on LED chip surface.

关键词

Keywords

references

Nakamura S. The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes [J]. Science, 1998, 281(5379):956-961.[2] Nakamura S, Senoh M, Iwasa N, et al. Superbright Green InGaN single-quantum-well-structure light-emitting diodes [J]. J. Appl. Phys., 1995, 34(10B):1332-1335.[3] Mukai T, Morita D, Nakamura S. High-power UV InGaN/AlGaN double-heterostructure LEDs [J]. J. Crystal Growth, 1998, 189/190(1/2):778-781.[4] Mukai T, Yamada M, Nakamura S. Current and temperature dependences of electroluminescence of InGaN-based UV/blue/green light-emitting diodes [J]. Jpn. J. Appl. Phys., 1998, 37(11B):1358-1361.[5] Nakamura S, Senoh M, Nagahama S, et al. InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices [J]. Jpn. J. Appl. Phys., 1997, 36(2):1568-1571.[6] Wang H X, Li H D, Lee Y B, et al. Fabrication of high-performance 370 nm ultraviolet light-emitting diodes [J]. J. Crystal Growth, 2004, 264(1/2/3):48-52.[7] Wierer J J, Fischer A J, Koleske D D. The impact of piezoelectric polarization and nonradiative recombination on the performance of (0001) face GaN/InGaN photovoltaic devices [J]. Appl. Phys. Lett., 2010, 96(5):051107-1-3 [8] Mukai T, Nakamura S. Ultraviolet InGaN and GaN single-quantum-well-structure light-emitting diodes grown on epitaxially laterally overgrown GaN substrates [J]. Jpn. J. Appl. Lett., 1999, 38(10):5735-5739. [9] Uchida K, Tang T, Goto S, et al. Spiral growth of InGaN/InGaN quantum wells due to Si doping in the barrier layers [J]. Appl. Phys. Lett., 1999, 74(8):1153-1155.[10] Guo X, Schubert E F. Current crowding and optical saturation effects in GaInN/GaN light-emitting diodes grown on insulating substrates [J]. Appl. Phys. Lett., 2001, 78(21):3337-3339.[11] Kim H, Park S J, Hwang H, et al. Lateral current transport path, a model for GaN-based light-emitting diodes: Applications to practical device designs [J]. Appl. Phys.Lett., 2002, 81(7):1326-1328.[12] Cho Y H, Song J J, Keller S, et al. Influence of Si doping on characteristics of InGaN/GaN multiple quantum wells [J]. Appl. Phys. Lett., 1998, 73(8):1128-1130.

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Effect of Al Composition of Electron Blocking Layer on Photoelectric Performance of GaN-based Blue Laser Diode

Epitaxial Growth of BGaN Films by MOCVD

Fabrication of Vertical Structure Ultraviolet LED on 6H-SiC Substrate

THEORY AND EXPERIMENTS OF GaInASP/InP SUPER LATTICE GROWTH BY VERY THIN SOLUTION LPE

Related Author

Bing-she XU

Xiao-juan DU

Jing LIU

Hai-liang DONG

Zhi-gang JIA

Ai-qin ZHANG

Jian LIANG

CAO Yue

Related Institution

School of Materials Science and Engineering, Taiyuan University of Technology

Aerospace Science and Technology Defense Technology Research and Experimental Center

Key Laboratory of Interface Science and Engineering of New Materials, Ministry of Education, Taiyuan University of Technology

College of Textile Engineering, Taiyuan University of Technology

Institute of Atomic and Molecular Science of Materials, Shaanxi University of Science and Technology

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰