Rapid Reliability Evaluation Method of LED Based on Pseudo-failure Lifetime

GUO Wei-ling; FAN Xing; CUI De-sheng; WU Guo-qing; YU Xin

doi:10.3788/fgxb20133402.0213

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Rapid Reliability Evaluation Method of LED Based on Pseudo-failure Lifetime

paper | 更新时间：2020-08-12

- Rapid Reliability Evaluation Method of LED Based on Pseudo-failure Lifetime
- Chinese Journal of Luminescence Vol. 34, Issue 2, Pages: 213-217(2013)
- 作者机构：
  
  北京工业大学光电子技术省部共建教育部重点实验室北京,100124
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20133402.0213
  CLC： TN364.2
- Received：27 November 2012，
  
  Revised：13 December 2012，
  
  Published：10 February 2013
- 稿件说明：
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郭伟玲, 樊星, 崔德胜, 吴国庆, 俞鑫. 一种基于伪失效寿命的LED可靠性快速评价方法[J]. 发光学报, 2013,34(2): 213-217

GUO Wei-ling, FAN Xing, CUI De-sheng, WU Guo-qing, YU Xin. Rapid Reliability Evaluation Method of LED Based on Pseudo-failure Lifetime[J]. Chinese Journal of Luminescence, 2013,34(2): 213-217
郭伟玲, 樊星, 崔德胜, 吴国庆, 俞鑫. 一种基于伪失效寿命的LED可靠性快速评价方法[J]. 发光学报, 2013,34(2): 213-217 DOI： 10.3788/fgxb20133402.0213.

GUO Wei-ling, FAN Xing, CUI De-sheng, WU Guo-qing, YU Xin. Rapid Reliability Evaluation Method of LED Based on Pseudo-failure Lifetime[J]. Chinese Journal of Luminescence, 2013,34(2): 213-217 DOI： 10.3788/fgxb20133402.0213.

摘要

提出一种快速评价LED可靠性的有效方法。通过测试LED样品的伪失效寿命

结合Minitab软件进行数据分析

确定全部样品的伪失效寿命服从二参数的威布尔分布。通过计算威布尔分布尺度参数

比较不同样品的尺度参数来评价产品的可靠性。该方法对LED的可靠性评价和寿命预测有一定的参考价值。

Abstract

An efficient and rapid reliability evaluation method of LED has been proposed. The pseudo-failure lifetime is tested and the lifetime data is analyzed by Minitab. The results show that the pseudo-failure lifetime of all samples are Weibull distribution. The reliability evaluation of LED products are made by comparing the scale parameters of Weibull distribution. This method has a certain reference value to reliability evaluation and life prediction of LED.

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references

Gao W. Study of Substrate Transfer and Reliability of AlGaInP LED . Beijing: Beijing University of Technology, 2011.[2] Yang Y H, Zhou Y Q. Theoretical foundation of accelerated life testing (Ⅱ) [J]. J. Propulsion Technol.(推进技术), 2001, 22(5):353-356 (in Chinese).[3] Lu C J, Meeker W Q. Using degradation measures to estimate a time-to-failure distribution [J]. Technometrics, 1993, 35(2):161-174.[4] Pursiainen O, Linder N, Jaeger A, et al. Identification of aging mechanisms in the optical and electrical characteristics of light-emitting diodes [J]. Appl. Phys. Lett., 2001, 79(18):2895-2896.[5] Altieri P, Jaeger A, Windisch R, et al. Internal quantum efficiency of high-brightness AlGaInP light-emitting devices [J]. J. Appl. Phys., 2005, 98(8):086101-1-3.[6] Xiao Y P, Mo C L, Qiu C, et al. The aging characteristics of GaN-based blue LED on Si substrate [J]. Chin. J. Lumin.(发光学报), 2010, 31(3):364-368 (in Chinese).[7] Yang L Q, Hu J Z, Kim L, et al. Variation of thermal resistance with input power in LEDs [J]. Phys. Status Solidi C:Current Topics in Solid State Physics, 2006, 3(6):2187-2190.[8] Hu J Z, Yang L Q, Shin M W. Mechanism and thermal effect of delamination in light-emitting diode packages [J]. Microelectronics Journal, 2007, 38(2):157-163.[9] Yang S C. Failure and degradation mechanisms of high-power white light emitting diodes [J]. Microelectron. Reliab., 2010, 50(7):959-964.[10] Wu G Q, Guo W L, Zhu Y X, et al. Effects of human body mode electrostatic on carrier movement and the reliability of GaN-based blue light-emitting diode [J]. Chin. J. Lumin.(发光学报), 2012, 33(10):1132-1137 (in Chinese).[11] Deng A M. Research on Reliability Technology of High-reliability and Long-lifetime Products . Changsha: National Defense Science and Technology University, 2006.[12] Zhang X F, Zhao Y. Weibull reliability analysis in small samples based on LSSVM [J]. Chin. Mechan. Eng.(中国机械工程), 2012, 23(16):1967-1971 (in Chinese).

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