Fabrication of Transparent Indium Zinc Oxide Thin Film Transistors by Sol-gel Technology

XIN En-long; LI Xi-feng; ZHANG Jian-hua

doi:10.3788/fgxb20133402.0208

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Fabrication of Transparent Indium Zinc Oxide Thin Film Transistors by Sol-gel Technology

paper | 更新时间：2020-08-12

- Fabrication of Transparent Indium Zinc Oxide Thin Film Transistors by Sol-gel Technology
- Chinese Journal of Luminescence Vol. 34, Issue 2, Pages: 208-212(2013)
- 作者机构：
  
  上海大学新型显示技术及应用集成教育部重点实验室, 上海 200072
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20133402.0208
  CLC： TN321+.5
- Received：02 December 2012，
  
  Revised：12 December 2012，
  
  Published：10 February 2013
- 稿件说明：
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信恩龙, 李喜峰, 张建华. 溶胶凝胶法制备透明IZO薄膜晶体管[J]. 发光学报, 2013,34(2): 208-212

XIN En-long, LI Xi-feng, ZHANG Jian-hua. Fabrication of Transparent Indium Zinc Oxide Thin Film Transistors by Sol-gel Technology[J]. Chinese Journal of Luminescence, 2013,34(2): 208-212
信恩龙, 李喜峰, 张建华. 溶胶凝胶法制备透明IZO薄膜晶体管[J]. 发光学报, 2013,34(2): 208-212 DOI： 10.3788/fgxb20133402.0208.

XIN En-long, LI Xi-feng, ZHANG Jian-hua. Fabrication of Transparent Indium Zinc Oxide Thin Film Transistors by Sol-gel Technology[J]. Chinese Journal of Luminescence, 2013,34(2): 208-212 DOI： 10.3788/fgxb20133402.0208.

摘要

采用溶胶凝胶法制备了非晶铟锌氧化物(a-IZO)薄膜

并作为薄膜晶体管(TFT)的有源层制备了a-IZO TFT。研究了IZO薄膜中铟锌比对薄膜性质及a-IZO TFT器件性能的影响。结果表明:溶胶凝胶法制备的IZO薄膜经低温(300 ℃)退火后为非晶结构

薄膜表面均匀平整、致密

颗粒大小为20 nm左右

并具有高透过率(＞85 %)。IZO薄膜中的铟锌比对薄膜的电学性能和TFT器件特性影响显著

增加In含量有利于提高薄膜和器件的迁移率。当铟锌比为3∶2时

所获得的薄膜适合于作为薄膜晶体管的有源层

制备的IZO-TFT经过相对低温(300 ℃)退火处理具有较好的器件性能

阈值电压为1.3 V

载流子饱和迁移率为0.24 cm

-1

开关比(I

∶I

off

)为10

。

Abstract

The amorphous InZnO (a-IZO) thin films were prepared by sol-gel technology

and thin film transistors (TFTs) were further fabricated by employing the IZO films as the active channel layer after low temperature (300 ℃) annealing treatment. The influence of indium concentration on the electrical properties of IZO thin films and the IZO-TFTs was investigated in this paper. The results revealed that the IZO film was amorphous

surface was uniform and smooth

grain about 20 nm

and the visible average optical transmittance was more than 85%. IZO-TFT with a threshold voltage of 1.3 V

a mobility of 0.24 cm

-1

and a I

∶I

off

current ratio of 10

was obtained when

(In)∶

(Zn)=3∶2.

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Keywords

references

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