Advance in Cu2 O-ZnO Solar Cells and Investigation of Cu2 O-ZnO Heterojunction Fabricated by Magnetron Sputtering

YANG Mei-jia; ZHU Li-ping

doi:10.3788/fgxb20133402.0202

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Advance in Cu₂ O-ZnO Solar Cells and Investigation of Cu₂ O-ZnO Heterojunction Fabricated by Magnetron Sputtering

paper | 更新时间：2020-08-12

- Advance in Cu₂ O-ZnO Solar Cells and Investigation of Cu₂ O-ZnO Heterojunction Fabricated by Magnetron Sputtering
- Chinese Journal of Luminescence Vol. 34, Issue 2, Pages: 202-207(2013)
- 作者机构：
  
  浙江大学材料系硅材料国家重点实验室,浙江杭州,310027
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20133402.0202
  CLC： O484.4
- Received：16 November 2012，
  
  Revised：11 December 2012，
  
  Published：10 February 2013
- 稿件说明：
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杨美佳, 朱丽萍. Cu2O-ZnO太阳能电池的研究进展及磁控溅射法制备Cu2O-ZnO异质结的研究[J]. 发光学报, 2013,34(2): 202-207

YANG Mei-jia, ZHU Li-ping. Advance in Cu2 O-ZnO Solar Cells and Investigation of Cu2 O-ZnO Heterojunction Fabricated by Magnetron Sputtering[J]. Chinese Journal of Luminescence, 2013,34(2): 202-207
杨美佳, 朱丽萍. Cu2O-ZnO太阳能电池的研究进展及磁控溅射法制备Cu2O-ZnO异质结的研究[J]. 发光学报, 2013,34(2): 202-207 DOI： 10.3788/fgxb20133402.0202.

YANG Mei-jia, ZHU Li-ping. Advance in Cu2 O-ZnO Solar Cells and Investigation of Cu2 O-ZnO Heterojunction Fabricated by Magnetron Sputtering[J]. Chinese Journal of Luminescence, 2013,34(2): 202-207 DOI： 10.3788/fgxb20133402.0202.

摘要

O-ZnO异质结具有成本低廉、环境友好及制备方法多样等优点

在太阳能电池领域有很好的应用前景。Cu

O薄膜的高电阻率和低载流子浓度是制约其效率提高的主要原因。本文采用磁控溅射法

在

(Ar)∶

)=90∶0.3时得到单相p型Cu

O薄膜

电阻率为88.5 cm

霍尔迁移率为16.9 cm

-1

载流子浓度为4.1910

-3

。并结合Cu

O-ZnO异质结能带结构的研究

对Cu

O-ZnO异质结太阳能电池今后的研究提出了一些建议。

Abstract

O-ZnO heterojunction has shown great potential for photovoltaic application due to the low-cost

nontoxicity

abundance and variety of preparation methods. However

the resistivity of the Cu

O film in present ZnO-Cu

O heterojunction solar cell is relatively high

which seems to be the major problem for the low photoelectric conversion efficiency. Cu

O films were prepared using reactive direct current magnetron sputtering. The microstructures and properties were characterized using X-ray diffraction

X-ray photoelectron spectroscopy (XPS) and Hall-effect measurements. The influences of

(Ar)∶

) on the structures and properties of deposited films were investigated. Single-phase Cu

O film with a resistivity of 88.5 cm

a Hall mobility of 16.9 cm

-1

and a carrier concentration of 4.1910

-3

were obtained at

(Ar)∶

)=90∶0.3. The as-deposited Cu

O films have a great improvement in electrical performance and have more advantage in photovoltaic application compared with that prepared by electrochemical deposition or thermal oxidation. On that basis

the Cu

O-ZnO heterojunctions were fabricated in reversed growth sequence and the band alignments of the heterojunctions were given to investigate their potential application in solar cells. Possible areas for future work in this field were outlined and some suggestions were made based on our investigation of the Cu

O-ZnO heterojunctions fabricated by magnetron sputtering.

关键词

Keywords

references

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