High Internal Quantum Efficiency Blue Light-emitting Diodes with Triangular Shaped InGaN/GaN Multiple Quantum Wells

ZHAO Fang; ZHANG Yun-yan; SONG Jing-jing; DING Bin-bin; FAN Guang-han

doi:10.3788/fgxb20133401.0066

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High Internal Quantum Efficiency Blue Light-emitting Diodes with Triangular Shaped InGaN/GaN Multiple Quantum Wells

Device Fabrication & Physics | 更新时间：2020-08-12

- High Internal Quantum Efficiency Blue Light-emitting Diodes with Triangular Shaped InGaN/GaN Multiple Quantum Wells
- Chinese Journal of Luminescence Vol. 34, Issue 1, Pages: 66-72(2013)
- 作者机构：
  
  华南师范大学光电子材料与技术研究所, 广东广州 510631
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20133401.0066
  CLC： TM23;O242.1
- Received：05 September 2012，
  
  Revised：11 October 2012，
  
  Published：10 January 2013
- 稿件说明：
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赵芳, 张运炎, 宋晶晶, 丁彬彬, 范广涵. 具有三角形InGaN/GaN多量子阱的高内量子效率的蓝光LED[J]. 发光学报, 2013,(1): 66-72

ZHAO Fang, ZHANG Yun-yan, SONG Jing-jing, DING Bin-bin, FAN Guang-han. High Internal Quantum Efficiency Blue Light-emitting Diodes with Triangular Shaped InGaN/GaN Multiple Quantum Wells[J]. Chinese Journal of Luminescence, 2013,(1): 66-72
赵芳, 张运炎, 宋晶晶, 丁彬彬, 范广涵. 具有三角形InGaN/GaN多量子阱的高内量子效率的蓝光LED[J]. 发光学报, 2013,(1): 66-72 DOI： 10.3788/fgxb20133401.0066.

ZHAO Fang, ZHANG Yun-yan, SONG Jing-jing, DING Bin-bin, FAN Guang-han. High Internal Quantum Efficiency Blue Light-emitting Diodes with Triangular Shaped InGaN/GaN Multiple Quantum Wells[J]. Chinese Journal of Luminescence, 2013,(1): 66-72 DOI： 10.3788/fgxb20133401.0066.

摘要

对InGaN量子阱LED的内量子效率进行了优化研究。分别对发光光谱、量子阱中的载流子浓度、能带分布、静电场和内量子效应进行了理论分析。对具有不同量子阱数量的InGaN/GaN LED进行了理论数值比对研究。研究结果表明

对于传统结构的LED而言

2个量子阱的结构相对于5个和7个量子阱具有更好的光学性能。同时还研究了具有三角形量子阱结构的LED

研究结果显示

三角形多量子阱结构具有较高的电致发光强度、更高的内量子效率和更好的发光效率

所有的优点都归因于较高的电子-空穴波函数重叠率和低的Stark效应所产生的较高的载流子输入效率和复合发光效率。

Abstract

The internal quantum efficiency (IQE) of InGaN quantum wells (QWs) light-emitting diodes (LEDs) is numerically investigated

which involved its emission spectra

carrier concentrations

energy band

electrostatic field and internal quantum efficiency. Optical properties of InGaN/GaN LEDs with varied QW numbers are numerically studied. The results reveal that

for the LEDs with conventional rectangular shaped QWs

two quantum wells (2-QWs) units structure has better optical performance than 5-QWs and 7-QWs structures. The advantages of nitride-based LEDs with triangular shaped InGaN/GaN multiple quantum wells (MQWs) are also discussed. The simulation results indicate that the triangular shaped MQW LEDs exhibit a higher electrical luminescence (EL) intensity

higher IQE and a stronger light-output power than the conventional rectangular MQW LEDs. All the advantages are due to the higher carrier injection efficiency and recombination rate which are caused by the higher electron-hole wave function overlap

and small quantum confined stark effect (QCSE).

关键词

Keywords

references

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