Effect of The Number of Quantum Wells on InGaN/AlGaN LED

SONG Jing-jing; ZHANG Yun-yan; ZHAO Fang; ZHENG Shu-wen; FAN Guan-han

doi:10.3788/fgxb20123312.1368

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Effect of The Number of Quantum Wells on InGaN/AlGaN LED

更新时间：2020-08-12

- Effect of The Number of Quantum Wells on InGaN/AlGaN LED
- Chinese Journal of Luminescence Vol. 33, Issue 12, Pages: 1368-1372(2012)
- 作者机构：
  
  华南师范大学光电子材料与技术研究所,广东广州,510631
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20123312.1368
  CLC： O47
- Received：03 September 2012，
  
  Revised：19 September 2012，
  
  Published：10 December 2012
- 稿件说明：
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宋晶晶, 张运炎, 赵芳, 郑树文, 范广涵. 量子阱数量变化对InGaN/AlGaN LED的影响[J]. 发光学报, 2012,33(12): 1368-1372

SONG Jing-jing, ZHANG Yun-yan, ZHAO Fang, ZHENG Shu-wen, FAN Guan-han. Effect of The Number of Quantum Wells on InGaN/AlGaN LED[J]. Chinese Journal of Luminescence, 2012,33(12): 1368-1372
宋晶晶, 张运炎, 赵芳, 郑树文, 范广涵. 量子阱数量变化对InGaN/AlGaN LED的影响[J]. 发光学报, 2012,33(12): 1368-1372 DOI： 10.3788/fgxb20123312.1368.

SONG Jing-jing, ZHANG Yun-yan, ZHAO Fang, ZHENG Shu-wen, FAN Guan-han. Effect of The Number of Quantum Wells on InGaN/AlGaN LED[J]. Chinese Journal of Luminescence, 2012,33(12): 1368-1372 DOI： 10.3788/fgxb20123312.1368.

摘要

采用软件理论分析的方法分析了InGaN/AlGaN量子阱数量变化对发光二极管内量子效率、电子空穴浓度分布、载流子溢出产生的影响。分析结果表明:量子阱的个数不是越多越好

LED的光学性质和量子阱的个数并不成线性关系。量子阱个数太少时

电流溢出现象较明显;而当量子阱个数太多时

极化现象明显

且会造成材料浪费。因此应根据工作电流选择合适的量子阱个数。

Abstract

The optical properties of the InGaN/AlGaN light-emitting diodes (LEDs) with varied quantum well(QW) numbers are studied numerically. The simulated results show that the single quantum-well (SQW) structure has the best optical performance with small current less than 100 mA. However

the 9-QWs structure obtains higher output power and IQE than other structures when the current is larger than 700 mA

and the efficiency droop is dropped markedly from 14.10% to 5.15% at 700 mA comparing with that of the SQW structure. Therefore

9-QWs is the optimized structure for high-power LEDs. It can be explained as follows: (1) The 9-QWs structure acquires higher capacity of carrier confinement due to the smaller band bending effect and the effective hole potential barrier heights formed by the electron block layer (EBL). (2) When the QW number is less than 9

the lower capacity of carrier confinement and lower radiative recombination rate in the active region reduce the performance of the device

though the turn-on voltage is lower. (3) When the QW number is more than 9

the structure shows higher peak internal quantum efficiency (IQE) and less serious efficiency droop compared with 9-QW structure. However

the smaller IQE and larger band bending effect make it worse for a high power structure.

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references

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Laboratory of Nanophotonic Functional Materials and Devices, School for Information and Optoelectronic Science and Engineering, South China Normal University

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