Thermal Analysis of High-power LED Without Aluminum Substrate

CHEN Jian-long; WEN Shang-sheng; YAO Ri-hui; WANG Feng

doi:10.3788/fgxb20123312.1362

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Thermal Analysis of High-power LED Without Aluminum Substrate

更新时间：2020-08-12

- Thermal Analysis of High-power LED Without Aluminum Substrate
- Chinese Journal of Luminescence Vol. 33, Issue 12, Pages: 1362-1367(2012)
- 作者机构：
  
  1. 华南理工大学高分子光电材料与器件研究所,广东广州,510640
  2. 华南理工大学发光材料与器件国家重点实验室,广东广州,510640
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20123312.1362
  CLC： TN312+.8
- Received：09 August 2012，
  
  Revised：14 September 2012，
  
  Published：10 December 2012
- 稿件说明：
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陈建龙, 文尚胜, 姚日晖, 汪峰. 去除铝基板的大功率LED热分析[J]. 发光学报, 2012,33(12): 1362-1367

CHEN Jian-long, WEN Shang-sheng, YAO Ri-hui, WANG Feng. Thermal Analysis of High-power LED Without Aluminum Substrate[J]. Chinese Journal of Luminescence, 2012,33(12): 1362-1367
陈建龙, 文尚胜, 姚日晖, 汪峰. 去除铝基板的大功率LED热分析[J]. 发光学报, 2012,33(12): 1362-1367 DOI： 10.3788/fgxb20123312.1362.

CHEN Jian-long, WEN Shang-sheng, YAO Ri-hui, WANG Feng. Thermal Analysis of High-power LED Without Aluminum Substrate[J]. Chinese Journal of Luminescence, 2012,33(12): 1362-1367 DOI： 10.3788/fgxb20123312.1362.

摘要

提出一种大功率LED免铝基板封装方式

采用ANSYS有限元热分析软件对传统的铝基板封装和免铝基板封装的LED进行模拟对比分析。模拟结果表明:两种封装结构的LED

其最高温度均出现在LED芯片处;对于单颗功率1 W、3颗功率1 W和单颗功率3 W的器件

由于有效地简化了散热通道、大幅度降低了总热阻

采用免铝基板结构的最高温度分别降低了6.436

9.468

19.309 ℃。传统的铝基板封装即使选用热导率高达200 W/(m·K)的基板

其散热效果依旧略逊于免铝基板封装结构

且随着LED功率的增大

免铝基板的新型封装结构散热优势更加明显。本文的研究为解决大功率LED的散热问题和光色稳定性问题提供了一种新途径。

Abstract

A novel method that without aluminum substrate high-power LED encapsulation is proposed. The thermal properties of traditional structure and this new structure is simulated by using finite element analysis software. The simulation results show that the maximum temperatures appear in the LED chips. Comparing with the traditional structure

the maximum temperatures of the new structure respectively lower 6.436

9.468 and 19.309 ℃ when the input power is 1×1 W

3×1 W and 1×3 W. Even if the thermal conductivity of substrate reaches as high as 200 W/(m·K)

the heat dissipation effect is still better than the structure with aluminum substrate. The heat dissipation effect of the new structure is obviously superior to that of aluminum substrate structure. With the increase of input power

the advantage of the new structure is more remarkable. It provides a new way to solve the heat dissipation problem of high power LED.

关键词

Keywords

references

Qian C. Thermal management of high-power white LED package //8th Int. Electron. Packaging Technol., Shanghai:IEEE, 2007:1-5.

Xie S, Zhang B, Mao L H, et al. Finite element analysis on SOI-based microring resonator design [J]. Chin. J. Lumin.(发光学报), 2010, 31(4):599-604 (in Chinese).

Wang J, Huang X, Liu L, et al. Effect of temperature and current on LED luminous efficiency [J]. Chin. J. Lumin.(发光学报), 2008, 29(2):358-362 (in Chinese).

Fei X, Qian K Y, Luo Y. Junction temperature measurement and luminous properties research of high-power LED [J]. J. Optoelectronics·Laser (光电子·激光), 2008, 19(3):289-292 (in Chinese).

Narendran N, Gu Y M. Life of LED-based white light sources [J]. J. Display Technol., 2005, 1(1):167-171.

Mao X W, Zhang Y W, Zhou J J, et al. A New Generation of Green Lighting LED and Its Application Technologies [M]. Beijing: The People's Posts and Telecommunications Press, 2008.

Tian D L, Guan R F, Wang X. Thermal analysis of finite element for high-power LED packaging [J]. Semiconductor Technology (半导体技术), 2008, 33(3):248-251 (in Chinese).

Wang J, Wu F G. Key issues of improving cooling of high-bightness LED [J]. Electronic Design Engineering (电子设计工程), 2009, 17(4):123-125 (in Chinese).

Chai W W, Chen Q H, Li L H, et al. Heat dissipation analysis of high power LED connected to copper coated heat sink by soldering [J]. Chin. J. Lumin.(发光学报), 2011, 32(11):1171-1175 (in Chinese).

Dai W F, Wang J, Li Y S. Transient thermal analysis of high-power LED package [J]. Semiconductor Optoelectronics (半导体光电), 2008, 29(3):324-328 (in Chinese).

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