Preparation and Optical Characterization of Black Silicon Materials

SHAO Chang-jin; HE Jing; LIU Bang-wu; XIA Yang; LI Chao-bo

doi:10.3788/fgxb20123312.1357

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Preparation and Optical Characterization of Black Silicon Materials

更新时间：2020-08-12

- Preparation and Optical Characterization of Black Silicon Materials
- Chinese Journal of Luminescence Vol. 33, Issue 12, Pages: 1357-1361(2012)
- 作者机构：
  
  1. 中国石油大学北京,102249
  2. 中国科学院微电子研究所北京,100029
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20123312.1357
  CLC： O443;O641
- Received：19 July 2012，
  
  Revised：08 October 2012，
  
  Published：10 December 2012
- 稿件说明：
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邵长金, 何静, 刘邦武, 夏洋, 李超波. 黑硅材料的制备及其光学特性[J]. 发光学报, 2012,33(12): 1357-1361

SHAO Chang-jin, HE Jing, LIU Bang-wu, XIA Yang, LI Chao-bo. Preparation and Optical Characterization of Black Silicon Materials[J]. Chinese Journal of Luminescence, 2012,33(12): 1357-1361
邵长金, 何静, 刘邦武, 夏洋, 李超波. 黑硅材料的制备及其光学特性[J]. 发光学报, 2012,33(12): 1357-1361 DOI： 10.3788/fgxb20123312.1357.

SHAO Chang-jin, HE Jing, LIU Bang-wu, XIA Yang, LI Chao-bo. Preparation and Optical Characterization of Black Silicon Materials[J]. Chinese Journal of Luminescence, 2012,33(12): 1357-1361 DOI： 10.3788/fgxb20123312.1357.

摘要

采用金催化化学腐蚀和钝化两个过程成功制备了黑硅。利用原子力显微镜、分光光度计、红外光谱仪和光致发光光谱仪分别对黑硅的微观结构、反射率、表面状态和发光性能进行了研究。结果表明:黑硅表面呈现山峰状的微观结构

其平均反射率可低至3.31%。光致发光光谱上出现了3个发光峰

分别由量子限制效应、硅氧烯、杂质和缺陷引起。

Abstract

The black silicon has been successfully produced by Au particle-assisted chemical etching. The microstructure

reflectance

surface morphology and photoluminescence properties of black silicon have been investigated by atomic force microscope

spectrophotometer

infrared spectrometer and photoluminescence spectrometer

respectively. The results show that the obtained black silicon exhibits a mountain-like structure with the average reflectance of 3.31%. The mechanism of black silicon produced by Au particle-assisted chemical etching is the combination of etching effect and passivation effect. The photoluminescence spectrum can be separated into three peaks which results from quantum confinement effect

siloxene

impurity and defect

respectively.

关键词

Keywords

references

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