WANG Peng-cheng, DENG Yong-li, ZHANG Li-ping, HAO Ming-ming, ZHU Hong-bo, WANG Li-jun. High Brightness Fiber Coupled Diode Laser Module[J]. Chinese Journal of Luminescence, 2012,33(12): 1335-1341
WANG Peng-cheng, DENG Yong-li, ZHANG Li-ping, HAO Ming-ming, ZHU Hong-bo, WANG Li-jun. High Brightness Fiber Coupled Diode Laser Module[J]. Chinese Journal of Luminescence, 2012,33(12): 1335-1341 DOI: 10.3788/fgxb20123312.1335.
Two 915 nm diode laser short bars were used as sub-module to manufacture high brightness fiber coupled module with continuous wave(CW) output power. Firstly
beam shaping technology was employed for each sub-module to enhance its beam quality. Secondly
the two beams were stacked in direction of lower beam parameter product by means of spatial multiplexing technology. Finally
the laser was focusing into a multimode fiber with 200 μm core diameter and
NA
=0.22 by optimized lens by focusing lens. Experiment results show that the beam waist diameter at focal plane is 105.4 μm when driving current is 52.5 A
the optical power output from fiber can reach to 72.6 W with a brightness of 6.08 MW/(cm
2
·sr)
and the wallplug efficiency is 42.2% when driving current is 52.5 A. The character of heat dissipation was studied by means of measuring spectrum with different current
and the results prove that the module has favorable heat dissipation.
关键词
Keywords
references
Cao Y L, Wang L, Liao X S, et al. Reliability of high-power semiconductor laser diodes [J]. Chin. J. Lumin.(发光学报), 2003, 24(1):100-102 (in Chinese).
Liu Y, Liao X S, Qin L, et al. Oxygen-free copper microchannel heat sink of high power semiconductor laser [J]. Chin. J. Lumin.(发光学报), 2005, 26(1):109-114 (in Chinese).
Ding X C, Zhang P, Xiong L L, et al. Thermal reaction of high power semiconductor laser with voids in solder layer [J]. Chin. J. Lasers (中国激光), 2011, 38(9):0902006-1-7 (in Chinese).
Zhu H B, Liu Y, Hao M M, et al. High efficiency module of fiber coupled diode laser [J]. Chin. J. Lumin.(发光学报), 2011, 32(11):1147-1151 (in Chinese).
Li Z J, Hu L M, Wang Y, et al. Facet coating for 808 nm Al-containing semiconductor laser diodes [J]. Opt. Precision Eng.(光学 精密工程), 2010, 18(6):1258-1263 (in Chinese).
Li L N, Wu J H, Song J F, et al. Far-field characteristics of high power laser diode [J]. Chin. J. Lumin.(发光学报), 2004, 15(1):95-97 (in Chinese).
Cao Y L, Wang L, Pan Y Z, et al. Catastrophic damage of high-power semiconductor quantum well laser during the measurement [J]. Chin. J. Lumin.(发光学报), 2002, 13(5):477-480 (in Chinese).
Li H X, Reinhardt F, Chyr I, et al. High-efficiency, high-power diode laser chips, bars, and stacks [J]. SPIE, 2008, 6876:68760G-1-6
Knapczyka M T, Jacoba J H, Eppicha H, et al. 70% efficient, near 1 kW, single 1-cm laser-diode bar at 20 ℃ [J].SPIE, 2011, 7918:79180F-1-6.
Niu G, Fan Z W, Wang P F, et al. A single fiber coupling module with the output power of 50 W [J]. J. Optoelectronics·Laser (光电子·激光), 2008, 19(4):427-429 (in Chinese).
Yang Y, Liu Y, Qin L, et al. Electro-optic properties of 850 nm high-brightness tapered lasers [J]. Chin. J. Lumin.(发光学报), 2011, 32(6):593-597 (in Chinese).
Huang R K, Chann B, Burgess J, et al. Direct diode lasers with comparable beam quality to fiber, CO2, and solid state lasers [J]. SPIE, 2012, 8241:8241021-1-6.
Liu Y Q, Cao Y H, Gao J, et al. The research of fiber-coupled high power diode laser [J]. SPIE, 2011, 8192:81922X-1-10
Gao X, Bo B X, Qiao Z L, et al. Single fiber coupling of multi-linear-array-diode-lasers [J]. Acta Photonica Sinica (光子学报), 2010, 39(7):1229-1234 (in Chinese).
Wang X P, Liang X M, Li Z J, et al. 880 nm semiconductor laser diode arrays and fiber coupling module [J]. Opt. Precision Eng.(光学 精密工程) , 2010, 18(5):1021-1027 (in Chinese).