Study of SiO2 Dielectric Film Stress Grown by The Method of Ion Assisted Deposition

ZHANG Jin-sheng; ZHANG Jin-long; NING Yong-qiang

doi:10.3788/fgxb20123312.1304

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Study of SiO₂ Dielectric Film Stress Grown by The Method of Ion Assisted Deposition

更新时间：2020-08-12

- Study of SiO₂ Dielectric Film Stress Grown by The Method of Ion Assisted Deposition
- Chinese Journal of Luminescence Vol. 33, Issue 12, Pages: 1304-1308(2012)
- 作者机构：
  
  1. 发光学及应用国家重点实验室中国科学院长春光学精密机械与物理研究所,吉林长春,130033
  2. 中国科学院大学北京,100049
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20123312.1304
  CLC： O484
- Received：18 May 2012，
  
  Revised：03 August 2012，
  
  Published：10 December 2012
- 稿件说明：
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张金胜, 张金龙, 宁永强. 离子辅助沉积法制备SiO2介质薄膜的应力研究[J]. 发光学报, 2012,33(12): 1304-1308

ZHANG Jin-sheng, ZHANG Jin-long, NING Yong-qiang. Study of SiO2 Dielectric Film Stress Grown by The Method of Ion Assisted Deposition[J]. Chinese Journal of Luminescence, 2012,33(12): 1304-1308
张金胜, 张金龙, 宁永强. 离子辅助沉积法制备SiO2介质薄膜的应力研究[J]. 发光学报, 2012,33(12): 1304-1308 DOI： 10.3788/fgxb20123312.1304.

ZHANG Jin-sheng, ZHANG Jin-long, NING Yong-qiang. Study of SiO2 Dielectric Film Stress Grown by The Method of Ion Assisted Deposition[J]. Chinese Journal of Luminescence, 2012,33(12): 1304-1308 DOI： 10.3788/fgxb20123312.1304.

摘要

在高功率垂直腔面发射激光器制作工艺中

生长出低应力、高质量、高稳定性的SiO

介质层非常关键。我们使用高效率LaB

离子源辅助

在低放电电流条件下

在GaAs衬底上沉积了SiO

并对退火的应力影响进行了测试。在有离子辅助沉积时

对不同生长速率、不同厚度的应力影响进行了研究

对沉积过程进行了分析。结果表明:离子辅助沉积的SiO

薄膜的应力远小于常规工艺条件下沉积的薄膜的应力

且退火后应力变化小。

Abstract

It is critical to achieve high quality and stability SiO

barrier in making high-power semiconductor lasers

SiO

barrier layer was grown on GaAs substrates using high efficiency LaB

ion assisted in low current. The stress effects were tested and analyzed after annealing. The stress conditions of different thickness and different growth rates were experimentally investigated and the deposition process was analyzed. The results show that the stress of SiO

film under the conditions of ion-assisted deposition is far less than the conventional deposition conditions. The stress of SiO

film under the conditions of ion-assisted deposition changes smaller after annealing.

关键词

Keywords

references

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