SiO2 Film Synthesized by Liquid Phase Deposition and Its Passivation Performance

LIU Bang-wu; ZHONG Si-hua; HE Jing; XIA Yang; LI Chao-bo

doi:10.3788/fgxb20123311.1264

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SiO₂ Film Synthesized by Liquid Phase Deposition and Its Passivation Performance

更新时间：2020-08-12

- SiO₂ Film Synthesized by Liquid Phase Deposition and Its Passivation Performance
- Chinese Journal of Luminescence Vol. 33, Issue 11, Pages: 1264-1267(2012)
- 作者机构：
  
  中国科学院微电子研究所中国科学院微电子器件与集成技术重点实验室北京,100029
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20123311.1264
  CLC： O76
- Received：12 July 2012，
  
  Revised：12 September 2012，
  
  Published：10 November 2012
- 稿件说明：
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刘邦武, 钟思华, 何静, 夏洋, 李超波. 液相沉积法制备的二氧化硅薄膜及其钝化性能[J]. 发光学报, 2012,(11): 1264-1267

LIU Bang-wu, ZHONG Si-hua, HE Jing, XIA Yang, LI Chao-bo. SiO2 Film Synthesized by Liquid Phase Deposition and Its Passivation Performance[J]. Chinese Journal of Luminescence, 2012,(11): 1264-1267
刘邦武, 钟思华, 何静, 夏洋, 李超波. 液相沉积法制备的二氧化硅薄膜及其钝化性能[J]. 发光学报, 2012,(11): 1264-1267 DOI： 10.3788/fgxb20123311.1264.

LIU Bang-wu, ZHONG Si-hua, HE Jing, XIA Yang, LI Chao-bo. SiO2 Film Synthesized by Liquid Phase Deposition and Its Passivation Performance[J]. Chinese Journal of Luminescence, 2012,(11): 1264-1267 DOI： 10.3788/fgxb20123311.1264.

摘要

采用液相沉积法在硅基底上成功制备了二氧化硅薄膜

利用扫描电子显微镜、光电子能谱和少子寿命测试仪等对二氧化硅薄膜的组织结构和钝化性能进行了研究

结果表明

液相生长的二氧化硅薄膜致密平整

含有少量的F元素;对硅具有较好的减反和钝化作用

平均反射率由28.87%降低至10.88%

表面复合速度由6 923 cm/s降低至2 830 cm/s。

Abstract

The SiO

film has been successfully synthesized by liquid phase deposition (LPD) method. The microstructure and passivation performance of the SiO

film have been investigated by scanning electron microscopy (SEM)

X-ray photoelectron spectroscopy (XPS) and microwave photoconductive decay (μ-PCD). The results show that the deposited SiO

film contains a little amount of F element and it is very smooth and dense. The reflectance and surface recombination velocity reduced to 10.88% and 2 830 cm/s

respectively.

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Keywords

references

Houng M P, Wang Y H, Huang C J, et al. Quality optimization of liquid phase deposition SiO2 films on gallium arsenide [J]. Solid-state Electronics, 2000, 44(11):1917-1923.

Kyoung S K, Yonghan R. Silicon dioxide deposited by using liquid phase deposition at room temperature for nanometer-scale isolation technology [J]. J. Korean Phys. Soc.,2007, 51(3):1191-1194.

Huang C J, Houng M P, Wang Y H, et al. Improve formation of silicon dioxide films in liquid phase deposition [J]. J. Vac. Sci. and Technol. A, 1998, 16(4):2646-2652.

Liu C B, Wang Z G. Effects of swift heavy ion irradiations on the photoluminescent properties of amorphous SiO2 thin films [J]. Chin. J. Lumin.(发光学报), 2011, 32(6):608-611 (in Chinese).

Li Q Y, Wei C P, Sun X F. Preparation and optical properties of Ag:ZnO/SiO2 thin composite films [J]. Chin. J. Lumin.(发光学报), 2010, 31(2):230-234 (in Chinese).

Menna P, Di Francia G, La Ferrara V. Porous silicon in solar cells: A review and a description of its application as an AR coating [J]. Solar Energy Materials and Solar Cells,1995, 37(1):13-24.

Kerr M J, Cuevas A. Very low bulk and surface recombination in oxidized silicon wafers [J]. Semicond. Sci. Technol., 2002, 17(1):35-38.

Li Q Y, Wei C P, Sun X F. Preparation and optical properties of Ag:ZnO/SiO2 thin composite films [J]. Chin. J. Lumin.(发光学报),2010, 31(2):230-234 (in Chinese).

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