High-performance Organic Light-emitting Diodes Based on ILTO Thin Film

TIAN Miao-miao; LI Chun-jie; HE Xiao-guang; YU Li-jun; FAN Yi; WANG Ning

doi:10.3788/fgxb20123311.1252

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High-performance Organic Light-emitting Diodes Based on ILTO Thin Film

更新时间：2020-08-12

- High-performance Organic Light-emitting Diodes Based on ILTO Thin Film
- Chinese Journal of Luminescence Vol. 33, Issue 11, Pages: 1252-1257(2012)
- 作者机构：
  
  1. 中国科学院长春应用化学研究所高分子物理与化学国家重点实验室,吉林长春,130022
  2. 长春师范学院物理学院,吉林长春,130032
  3. 中国科学院长春应用化学研究所高分子复合材料工程实验室,吉林长春,130022
  4. 发光学与应用国家重点实验室中国科学院长春光学精密机械与物理研究所,吉林长春,130033
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20123311.1252
  CLC： TN383+.1
- Received：29 July 2012，
  
  Revised：24 September 2012，
  
  Published：10 November 2012
- 稿件说明：
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田苗苗, 李春杰, 贺小光, 于立军, 范翊, 王宁. 以ILTO为阳极的高效有机电致发光器件[J]. 发光学报, 2012,(11): 1252-1257

TIAN Miao-miao, LI Chun-jie, HE Xiao-guang, YU Li-jun, FAN Yi, WANG Ning. High-performance Organic Light-emitting Diodes Based on ILTO Thin Film[J]. Chinese Journal of Luminescence, 2012,(11): 1252-1257
田苗苗, 李春杰, 贺小光, 于立军, 范翊, 王宁. 以ILTO为阳极的高效有机电致发光器件[J]. 发光学报, 2012,(11): 1252-1257 DOI： 10.3788/fgxb20123311.1252.

TIAN Miao-miao, LI Chun-jie, HE Xiao-guang, YU Li-jun, FAN Yi, WANG Ning. High-performance Organic Light-emitting Diodes Based on ILTO Thin Film[J]. Chinese Journal of Luminescence, 2012,(11): 1252-1257 DOI： 10.3788/fgxb20123311.1252.

摘要

以高功函数的掺杂钛酸镧的氧化铟薄膜(ILTO)及氧化铟锡(ITO)作为阳极

制备了Glass/anode/NPB/Alq

/LiF/Al结构的有机电致发光器件。得益于ILTO较好的掺杂性、低的表面粗糙度、高的可见光透过率以及高的有效功函数

以ILTO为阳极的有机电致发光器件的开路电压得到降低

最高亮度、电流效率、功率效率以及外量子效率均获得了成倍的提高。研究结果表明

ILTO是一种潜在的光学窗口材料

有望在各种光电器件中得到广泛的应用。

Abstract

OLEDs were fabricated with a structure of anode (ILTO or ITO)/NPB (70 nm)/Alq

(60 nm)/LiF (1 nm)/Al (100 nm). NPB and tris(8-hydroxyquinoline) aluminum (Alq

) were used as hole transport layer and light emitting layer

respectively. A buffer layer of lithium fluoride (LiF) capped with aluminum (Al) was used as a cathode. Comparing with ITO-anode device

the luminance

current efficiency

power efficiency

and external quantum efficiency (EQE) are obviously enhanced in ILTO-anode device. Simultaneously

the turn-on voltage (2.1 V) is decreased in combination with a better rectifying behavior. The significant improvement in the EL performance indicates that the high-work-function ILTO anode can not only lower the hole-injection barrier

but also leads to a better charge balance in OLEDs. The effects of high work function afford more opportunities to develop and optimize the performance of organic photoelectric devices

and facilitate the fabrication process of devices.

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Keywords

references

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Related Institution

State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences

Luminous Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University

Physics College, Changchun Normal University

Graduate School of Chinese Academy of Sciences

Laboratory of Exicited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences

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