The Accelerated Aging Characterization of High Power LED

LI Yan-fei; ZHANG Fang-hui; ZHANG Jing

doi:10.3788/fgxb20123311.1236

您当前的位置：

首页 >

文章列表页 >

The Accelerated Aging Characterization of High Power LED

更新时间：2020-08-12

- The Accelerated Aging Characterization of High Power LED
- Chinese Journal of Luminescence Vol. 33, Issue 11, Pages: 1236-1240(2012)
- 作者机构：
  
  陕西科技大学电气与信息工程学院,陕西西安,710021
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20123311.1236
  CLC： TN312.8
- Received：17 July 2012，
  
  Revised：20 September 2012，
  
  Published：10 November 2012
- 稿件说明：
移动端阅览
李艳菲, 张方辉, 张静. 大功率LED的电流老化特性分析[J]. 发光学报, 2012,(11): 1236-1240

LI Yan-fei, ZHANG Fang-hui, ZHANG Jing. The Accelerated Aging Characterization of High Power LED[J]. Chinese Journal of Luminescence, 2012,(11): 1236-1240
李艳菲, 张方辉, 张静. 大功率LED的电流老化特性分析[J]. 发光学报, 2012,(11): 1236-1240 DOI： 10.3788/fgxb20123311.1236.

LI Yan-fei, ZHANG Fang-hui, ZHANG Jing. The Accelerated Aging Characterization of High Power LED[J]. Chinese Journal of Luminescence, 2012,(11): 1236-1240 DOI： 10.3788/fgxb20123311.1236.

摘要

基于一体化封装技术

先将铝基板进行硬质阳极氧化处理使其绝缘

后将蓝光LED芯片直接封装到铝基板上

分别制成大功率白光和蓝光LED

其中白光LED由蓝光芯片涂覆YAG:Ce荧光粉制成。将白光和蓝光LED分别用500 mA和700 mA电流加速老化1 000 h

平均每间隔24 h测试其各种光学参数

对比蓝光LED与白光LED的衰减情况。白光LED的光通量衰减比蓝光严重

但白光光功率的衰减比蓝光慢。LED的衰减分为两个阶段:第一阶段芯片与荧光粉同时衰减;第二阶段主要是芯片的衰减

荧光粉衰减较慢。

Abstract

Insulation layer of aluminum substrate for LED encapsulation was made by hard anodizing technology. White and blue GaN-based light-emitting diodes were encapsulated on the aluminum plate directly. White LED was fabricated by blue chip coated with YAG:Ce phosphor

while blue LED didn't coated with phosphor. Accelerated aging tests at 500 mA and 700 mA were carried out for about 1 000 h on the new type of integrated high-power. Then optical parameters of LEDs were tested per 24 h. Compared with the blue and white LED

we could get the following conclusions: White LED luminous flux attenuates seriously than the blue LED

while optical power is opposite. There are two stages in LED attenuation: The chip and phosphor decay at the same time in initial stage of aging

well blue chip attenuation is dominant after a certain period of time.

关键词

Keywords

references

Yeh N C, Chung J P. High-brightness LEDs-energy efficient lighting sources and their potential in indoor plant cultivation [J]. Renewable and Sustainable Energy Reviews, 2009, 13(8):2175-2180.

Xiao Y P, Mo C L, Qiu C, et al. The aging characteristics of GaN-based blue LED on Si substrate [J]. Chin. J. Lumin.(发光学报),2010, 31(3):364-368 (in Chinese).

Peng J. The main problem in the high-power LED application [J]. Lamps and Lighting, 2004, (3):4-7.

Liu Wong J H, Siu S L. Degradation behaviors of GaN light-emitting diodes under high-temperature and high-current stressing [J]. Microelectron. Reliab.,2011, 9(14):1-4.

Xue Z Q, Huang S R, Zhang B P, et al. Analysis of failure mechanism of GaN-based white light-emitting diode [J]. Acta Physica Sinica (物理学报),2010, 59(7):5002- 5009 (in Chinese).

Meneghini M, Barbisan D, Bilenko Y. Defect-related degradation of deep-UV-LEDs [J]. Microelectron. Reliab.,2010, 50(9-11):1538-1542.

Wang J S, Tsai C C, Liou J S. Mean-time-to-failure evaluations of encapsulation materials for LED package in accelerated thermal tests [J]. Microelectron. Reliab.,2012, 52(5):813-817.

Cui D S, Guo W L, Cui B F, et al. Early degradation of GaN-based power LED under electrical stresses [J]. Chin. J. Lumin.(发光学报), 2012, 33(1):93-96 (in Chinese).

Zhang Z T, Zhang J Y. Inorganic Photoluminescence Materials and Application [M]. Beijing: Chemical Industry Press, 2011:182-184.

Wu H B, Wang C L. Experimental research on influence of packing materials of white LED on its luminous decay [J]. Acta Optica Sinica (光学学报),2005, 25(8):1091-1094 (in Chinese).

Miu J D, Xu W J, Mou T S. Photovoltaic Technology[M]. Hangzhou: Zhejiang University Press, 1995:3-5.

Xu X M, Peng J C, Li H J. Effects of carrier mobilities on recombination efficiency in single layer organic [J]. Acta Physica Sinica (物理学报), 2002, 51(10):2380-2386 (in Chinese).

Dai S C. Influence of power effect on the thermal resistance of power LED [J]. Chin. J. Lumin.(发光学报),2010, 31(6):876-881 (in Chinese).

Views

436

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Photoluminescence and Multifunctional Applications of NaGdMgTeO₆∶Eu³⁺ Phosphors

Preparation of New Single Component Solid Carbon Dots for White LED with High Color Rendering Index

AlGaN Based Deep Ultraviolet LED for Inactivating Coxsackie Virus

Regulating Near-infrared Luminescence of ZnGa₂O₄∶Cr³⁺ via F/O Anion Substitution

Recent Progress on Bi³⁺-doped Luminescent Material

Related Author

LIU Fangfang

DAI Zhengmang

ZHOU Weiwei

LI Rongqing

XIA Zhengrong

WANG Zifeng

YANG Miai

ZHU Haodong

Related Institution

Anhui Engineering Research Center for Photoelectrocatalytic Electrode Materials， School of Electrical Engineering， Huainan Normal University

Huainan No.6 High School

School of Chemistry and Chemical Engineering， Yunnan Normal University

School of Chemistry & Environment， Yunnan Minzu University

Peking University Third Hospital

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰