Effects of Sputtering Pressure on Microstructure and Chemical Composition of Amorphous Hg1-xCdxTe Films

WANG Guang-hua; KONG Jin-chen; LI Xiong-jun; YANG Li-li; ZHAO Hui-qiong; JI Rong-bin

doi:10.3788/fgxb20123311.1224

您当前的位置：

首页 >

文章列表页 >

Effects of Sputtering Pressure on Microstructure and Chemical Composition of Amorphous Hg_1-xCd_xTe Films

更新时间：2020-08-12

- Effects of Sputtering Pressure on Microstructure and Chemical Composition of Amorphous Hg_1-xCd_xTe Films
- Chinese Journal of Luminescence Vol. 33, Issue 11, Pages: 1224-1231(2012)
- 作者机构：
  
  昆明物理研究所,云南昆明,650223
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20123311.1224
  CLC： O472.8
- Received：23 July 2012，
  
  Revised：14 September 2012，
  
  Published：10 November 2012
- 稿件说明：
移动端阅览
王光华, 孔金丞, 李雄军, 杨丽丽, 赵惠琼, 姬荣斌. 溅射气压对非晶Hg1-xCdxTe薄膜微观结构和化学组分的影响[J]. 发光学报, 2012,(11): 1224-1231

WANG Guang-hua, KONG Jin-chen, LI Xiong-jun, YANG Li-li, ZHAO Hui-qiong, JI Rong-bin. Effects of Sputtering Pressure on Microstructure and Chemical Composition of Amorphous Hg1-xCdxTe Films[J]. Chinese Journal of Luminescence, 2012,(11): 1224-1231
王光华, 孔金丞, 李雄军, 杨丽丽, 赵惠琼, 姬荣斌. 溅射气压对非晶Hg1-xCdxTe薄膜微观结构和化学组分的影响[J]. 发光学报, 2012,(11): 1224-1231 DOI： 10.3788/fgxb20123311.1224.

WANG Guang-hua, KONG Jin-chen, LI Xiong-jun, YANG Li-li, ZHAO Hui-qiong, JI Rong-bin. Effects of Sputtering Pressure on Microstructure and Chemical Composition of Amorphous Hg1-xCdxTe Films[J]. Chinese Journal of Luminescence, 2012,(11): 1224-1231 DOI： 10.3788/fgxb20123311.1224.

摘要

采用射频磁控溅射制备了非晶态结构的Hg

Te薄膜

并利用台阶仪、XRD、原子力显微镜、EDS等分析手段对薄膜生长速率、物相、表面形貌、组分比例进行了研究。实验结果表明

溅射气压对薄膜生长速率、微观结构、表面形貌和化学组分有直接影响。随着溅射气压增大

其生长速率逐渐降低。当溅射气压高于1.1 Pa时

薄膜XRD图谱上没有出现任何特征衍射峰

只是在2

=23°附近出现衍射波包

具有明显的非晶态特征;当溅射气压小于1.1 Pa时

XRD谱表现为多晶结构。另外

随着溅射气压的增加

薄膜表面粗糙度逐渐减小

而且溅射气压对薄膜组成的化学计量比有明显影响

当溅射气压为1.1 Pa时

薄膜中Hg的组分比最低

而Cd组分比最高。

Abstract

Mercury cadmium telluride films were prepared by RF magnetron sputtering technique at different sputtering pressure on glass substrate. In experiment

X-ray diffraction (XRD)

atomic force microscopy (AFM) and energy dispersive spectroscopy (EDS) have been used to characterize the microstructure

surface morphology and chemical composition of Hg

Te films. Experimental results show that the growth rate

crystal structure

chemical composition content and surface morphology of the Hg

Te films have a strong relation to the sputtering pressure. When increased the sputtering pressure

the growth rate of films decreased. When the sputtering pressure was more than 1.1 Pa

the prepared Hg

Te film was amorphous

and when the sputtering pressure was controlled at 0.9 Pa

the films exhibited polycrystalline structure. In addition

the surface roughness (RMS and Ra) of Hg

Te films gradually decreased with the increasing of sputtering pressure. The chemical composition of films also varing with different sputtering pressure

the Hg and Hg+Cd content in films reache the lowest

but the Cd content gets to the top at 1.1 Pa.

关键词

Keywords

references

Rogalski A. Toward third generation HgCdTe infrared detectors [J]. J. Alloys. Comp., 2004, 371(1):53-57.

Rogalski A. Infrared detectors: An overview [J]. Infrared Phys. Technol., 2002, 43(3):187-210.

Guo L, Zhao D X, Zhang Z Z, et al. Optoelectronic properties of ZnO/Ag/ZnO multiple films [J]. Chin. J. Lumin.(发光学报), 2011, 32(9):920-923 (in Chinese).

Maxey C D, Capper P, Whiffen P A C, et al. High-quality p-type Hg1-xCdxTe prepared by metalorganic chemical vapor deposition [J]. Appl. Phys. Lett., 1995, 67(23):3450-1-3.

Gopal V, Ashokan R, Dhar V. Compositional characterization of HgCdTe epilayers by infrared transmission [J]. Infrared Phys., 1992, 33(1):39-45.

He L, Chen L, Wu Y, et al. MBE HgCdTe on Si and GaAs substrates [J]. J. Cryst. Growth, 2007, 301-302:268-272.

Bajaj J. HgCdTe infrared detectors and focal plane arrays [J]. IEEE, 1999:23-31.

Jiang D Y, Zhang J Y, Shan C X, et al. Solar-blind photodetector based on MgZnO thin films [J]. Chin. J. Lumin.(发光学报), 2008, 29(4):743-746 (in Chinese).

Kong J C, Kong L D, Zhao J, et al. Structural and optical properties of amorphous MCT films deposited by magnetron sputtering [J]. J. Semiconductors (半导体学报), 2008, 29(4):732-736 (in Chinese).

Zhong Z, Sun L J, Xu X Q, et al. Effect of high temperature annealing in nitrogen on the luminescence property of ZnO films [J]. Chin. J. Lumin.(发光学报), 2010, 31(3):359-363 (in Chinese).

Tang W Z. The Theory and Technology of the Thin Film Production [M]. Beijing: Melallurgical Industry Press, 2003:131-134.

Liu M, Man B Y, Lin X C, et al. The effect of incident laser energy on pulsed laser deposition of HgCdTe films [J]. J. Cryst. Growth, 2009, 311(4):1087-1090.

Chandramohan S, Sathyamoorthy R, Lalitha S, et al. Structural properties of CdTe thin films on different substrates [J]. Solar Energy Mater. & Solar Cells, 2006, 90(6):686-693.

Garg A, Kapoor A, Tripathi K N, et al. Laser induced damage studies in mercury cadmium telluride [J]. Opt. Laser Technol., 2007, 39(7):1319-1327.

Wang X J, Song H, Li D B, et al. Study of AlN films doped by Si thermal diffusion [J]. Chin. J. Lumin. (发光学报), 2012, 33(7):769-733 (in Chinese).

Zhu S, Ryu Y, White H W, et al. Effects of ambient pressure in pulsed laser deposition morphology and composition study of epitaxial ZnSe film [J]. Appl. Surf. Sci., 1998, 129:584-588.

Khandelwal R, Singh A P, Kapoor A. Effects of deposition temperature on the structural and morphological properties of thin ZnO films fabricated by pulsed laser deposition [J]. Opt. Laser Technol., 2008, 40(2):247-251.

Reddy A S, Uthanna S, Reddy P S. Properties of DC magnetron sputtered Cu2O films prepared at different sputtering pressures [J]. Appl. Surf. Sci., 2007, 253(12):5287-5292.

Ma Q B, Ye Z Z. Effects of deposition pressure on the properties of transparent conductive ZnO∶Ga films prepared by DC reactive magnetron sputtering [J]. Mater. Sci. in Semicon. Proc., 2007, 10(4):167-172.

Liu M, Man B Y, Lin X C. The effect of substrate material on pulsed laser deposition of HgCdTe films [J]. Appl. Surf. Sci., 2009, 255(9):4848-4851.

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

(002) Preferred Oriented AlN Films Grown by DC Magnetron Sputtering and Photoluminescence

Electrochromic Properties of WO₃ Film by Spin-coating

Fabrication of Cu₂SnS₃ Thin Films Solar Cells by Magnetron Sputtering Sn and CuS Targets

Preparation of ZnO Thin Film on Zein by RF Magnetron Sputtering

Effect of Fe₃O₄ Nanoparticles on P3HT: PCBM Solar Cells

Related Author

LYU Wei

LIU Jun

ZHAO Peng-yu

LI Jian-liang

LI Si-da

SHEN Long-hai

ZHANG Guan-guang

NI Hao-zhi

Related Institution

School of Science, Shenyang Ligong University

Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, School of Materials Science and Engineering, South China University of Technology

Yunnan Key Laboratory of Opto-electronic Information Technology, Key Laboratory of Rural Energy Engineering in Yunnan, Yunnan Normal University

吉林建筑大学电气与计算机学院

吉林建筑大学吉林省建筑电气综合节能重点实验室

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰