Hydrostatic Pressure and Screening Influence on Binding Energies of Impurity in Quantum Wells with Infinite Barriers Under An External Magnetic Field

LIU He; WEN Shu-min; ZHAO Chun-wang; HA Si-hua

doi:10.3788/fgxb20123311.1198

您当前的位置：

首页 >

文章列表页 >

Hydrostatic Pressure and Screening Influence on Binding Energies of Impurity in Quantum Wells with Infinite Barriers Under An External Magnetic Field

更新时间：2020-08-12

- Hydrostatic Pressure and Screening Influence on Binding Energies of Impurity in Quantum Wells with Infinite Barriers Under An External Magnetic Field
- Chinese Journal of Luminescence Vol. 33, Issue 11, Pages: 1198-1203(2012)
- 作者机构：
  
  内蒙古工业大学理学院物理系,内蒙古呼和浩特,010051
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20123311.1198
  CLC： O471.3
- Received：29 June 2012，
  
  Revised：24 September 2012，
  
  Published：10 November 2012
- 稿件说明：
移动端阅览
刘贺, 温淑敏, 赵春旺, 哈斯花. 外场下压力及屏蔽对无限深量子阱中施主结合能的影响[J]. 发光学报, 2012,(11): 1198-1203

LIU He, WEN Shu-min, ZHAO Chun-wang, HA Si-hua. Hydrostatic Pressure and Screening Influence on Binding Energies of Impurity in Quantum Wells with Infinite Barriers Under An External Magnetic Field[J]. Chinese Journal of Luminescence, 2012,(11): 1198-1203
刘贺, 温淑敏, 赵春旺, 哈斯花. 外场下压力及屏蔽对无限深量子阱中施主结合能的影响[J]. 发光学报, 2012,(11): 1198-1203 DOI： 10.3788/fgxb20123311.1198.

LIU He, WEN Shu-min, ZHAO Chun-wang, HA Si-hua. Hydrostatic Pressure and Screening Influence on Binding Energies of Impurity in Quantum Wells with Infinite Barriers Under An External Magnetic Field[J]. Chinese Journal of Luminescence, 2012,(11): 1198-1203 DOI： 10.3788/fgxb20123311.1198.

摘要

考虑外加磁场、压力及屏蔽效应

利用变分方法数值计算GaN/Al

N无限深量子阱系统中的杂质态结合能。给出结合能随磁场和阱宽的变化关系

同时讨论了有无屏蔽时的区别。结果表明:在磁场和压力作用下

结合能随阱宽的增大而减小;阱宽和压力一定时

结合能随磁场的增大而增大。屏蔽效应使得有效库仑吸引作用减弱而导致杂质态结合能显著下降。屏蔽效应对结合能的影响随压力增大而增强

随磁场强度增大而减弱。

Abstract

Considering the hydrostatic pressure and screening effect on the GaN/Al

N quantum well with infinite barriers under an external magnetic field. The variational methods are used to numerical calculation the binding energies of the impurity in the system. The relations between the binding energies of donors with magnetic field strength and well width is given. We also discussed the difference between the cases with and without screening. The resultds indicate that the binding energy increases with the well width under a fixed magnetic field strength and pressure. The results also show that the binding energy increases with the magnetic field strength for a given well width and pressure. Because of the screening reduce coulomb interaction effectively

the binding energy of impurity states decreases significantly. Screening effect increases with the pressure and decreases with the magnetic field strength.

关键词

Keywords

references

Thompson M P, Auner G W, Zheleva T S, et al. Deposition factors and band gap of zinc-blende AlN [J]. J. Appl. Phys.,2000, 89(6):3331-3336.

Lemos V, Silveira E, Leite J R, et al. Evidence for phase-separated quantum dots in cubic InGaN layers from resonant Raman scattering [J]. Phys. Rev. Lett., 2000, 84(16):3666-3669.

Park S H, Chuang S L. Comparison of zinc-blende and wurtzite GaN semiconductors with spontaneous polarization and piezoelectric field effects [J]. J. Appl. Phys., 2000, 87(1):353-364.

Li Z Y, Wang M, Su X Y, et al. First-principles study on electron structure and light absorption of the blende Ga1-xAlxN systems [J]. Chin. J. Lumin.(发光学报), 2010, 31(4):521-526 (in Chinese).

Bastard G. Hydrogenic impurity states in a quantum well: A simple model [J]. Phys. Rev. B, 1981, 24(8):4714-4722.

Elangovan A, Navaneethakrishnan K. Binding energy of a bound polaron in strong magnetic fields in low-dimensional semiconductor systems [J]. J. Phys.: Condens. Matter,1993, 5(24):4021-4028.

Elangovan A, Navaneethakrishnan K. Pressure dependence of the diamagnetic susceptibility of a donor in low-dimensional semiconductor systems [J]. Phys. Rev. B, 1993, 48(11):7986-7990.

Hollox D M, Antoniewicz P R. Bound state of an external impurity at a semiconductor-semiconductor interface in the presence of a magnetic field [J]. Phys. Rev.B, 1986, 33(12):8558-8563.

Zhao G J, Liang X X, Ban S L. Binding energies of donors in quantum wells under hydrostatic pressure [J]. Phys. Lett.A, 2003, 319(1-2):191-197.

Wen S M, Ban S L. Screening influence on binding energies of donors in quantum wells with finite barriers under hydrostatic pressure [J]. J. Semiconductors (半导体学报), 2006, 27(1):63-67 (in Chinese).

Wen S M, Zhao C W, Wang X J. Pressure effect on the binding energies of donors in strained GaN/AlGaN quantum well [J]. J. Func. Mater.(功能材料), 2010, 41(1):97-100 (in Chinese).

Wen S M, Ban S L. Influence of polaronic effect on binding energies of donors in quantum wells with finite barriers under hydrostatic pressure l [J]. J. Semiconductors (半导体学报),2007, 28(6):848-855 (in Chinese).

Cao Y L, Ban S L. Screening influence on the binding energy of a donor in a GaAs/AlxGa1-xAs heterojunction system [J]. Acta Scientiarum Naturalium Universitatis Neimongol (内蒙古大学学报),2001, 32(4):392-396 (in Chinese).

Zhang M, Ban S L. Impurity states in semiconductor GaAs/AlxGa1-xAs heterojunctions with an external magnetic field [J]. Chin. J. Lumin.(发光学报),2004, 25(4):369-374 (in Chinese).

Ban S L, Hasbun J E. Level in a quasi-two dimensional heterojunction system [J]. Solid State Commun.,1999, 109(2):93-98.

Karch K, Bechstedt F, Pletl T. Lattice dynamics of GaN: Effects of 3d electrons [J]. Phys. Rev.B, 1997, 56(7): 3560-3563.

Karch K, Bechstedt F. Ab initio lattice dynamics of BN and AlN covalent versus ionic forces [J]. Phys. Rev. B, 1997, 56(12):7404-7415.

Wagner J M, Bechstedt F. Pressure dependence of the dielectric and lattice dynamical properties of GaN and AlN [J]. Phys. Rev. B, 2000, 62(7):4526-4534.

Wang H, Farias G A, Freire V N. Interface related exciton energy blue shift in GaN/AlxGa1-xN zinc blende and wurtzite single quantum wells [J]. Phys. Rev. B, 1999, 60(8):5705-5713.

Phillips J C, Lucovsky G. Bonds and Bands in Semiconductors[M]. 2nd Edition, New York: Momentum Press, 1973:125-129.

Wei S H, Zunger A. Predicted band-gap pressure coefficients of all diamond and zincb-lende semiconductors [J]. Phys. Rev. B, 1999, 60(8):5404-5411.

Views

175

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Hydrostatic Pressure and Screening Influence on Binding Energies of Impurity in Quantum Wells with Infinite Barriers

Interface Effect on the Impurity State in a GaN/Ga_1-xAl_xN Quantum Dot under Pressure

Research Progresses on Infrared Superluminescent Diodes

Mechanism of a-AlN Surface Morphology Evolution by High Temperature Annealing

High Temperature-stable 25 Gbit/s 850 nm Vertical-cavity Surface-emitting Lasers

Related Author

ZHANG Min

YAN Zu-wei

YANG Jinghang

YAN Changling

LIU Yun

LI Yifei

FENG Yuan

HAO Yongqin

Related Institution

Department of Physics, Inner Mongolia University of Technology

Department of Physics, Inner Mongolia Agricultural University

College of Physics and Electron Information, Inner Mongolia Normal University

Shoole of Physics Science and Technology, Inner Mongolia University

State Key Laboratory on High-power Semiconductor Lasers， Changchun University of Science and Technology

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰