Fabrication and Characterization of Green CdSe Quantumn Dot Light Emitting Diodes with ZnO Electron-transport Layer

ZHANG Wen-jun; ZHAI Bao-cai; XU Jian

doi:10.3788/fgxb20123311.1171

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Fabrication and Characterization of Green CdSe Quantumn Dot Light Emitting Diodes with ZnO Electron-transport Layer

更新时间：2020-08-12

- Fabrication and Characterization of Green CdSe Quantumn Dot Light Emitting Diodes with ZnO Electron-transport Layer
- Chinese Journal of Luminescence Vol. 33, Issue 11, Pages: 1171-1176(2012)
- 作者机构：
  
  1. 上海理工大学光电信息与计算机工程学院上海,200093
  2. Department of Engineering Science and Mechanics, Penn State University,Pennsylvania,USA,16802
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20123311.1171
  CLC： TN383.1
- Received：05 June 2012，
  
  Revised：04 September 2012，
  
  Published：10 November 2012
- 稿件说明：
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张文君, 翟保才, 许键. ZnO作为电子传输层的绿光胶体CdSe量子点LED(QD-LED)的制备与表征[J]. 发光学报, 2012,(11): 1171-1176

ZHANG Wen-jun, ZHAI Bao-cai, XU Jian. Fabrication and Characterization of Green CdSe Quantumn Dot Light Emitting Diodes with ZnO Electron-transport Layer[J]. Chinese Journal of Luminescence, 2012,(11): 1171-1176
张文君, 翟保才, 许键. ZnO作为电子传输层的绿光胶体CdSe量子点LED(QD-LED)的制备与表征[J]. 发光学报, 2012,(11): 1171-1176 DOI： 10.3788/fgxb20123311.1171.

ZHANG Wen-jun, ZHAI Bao-cai, XU Jian. Fabrication and Characterization of Green CdSe Quantumn Dot Light Emitting Diodes with ZnO Electron-transport Layer[J]. Chinese Journal of Luminescence, 2012,(11): 1171-1176 DOI： 10.3788/fgxb20123311.1171.

摘要

通过调节作为发光层的量子点的尺寸

可以制作出覆盖可见光(380~780 nm)以及近红外光谱的量子点LED(QD-LED)

其光谱范围很窄且半高宽可达30 nm。然而量子点LED的寿命、亮度以及效率需要进一步提高才能满足商业化的需求。为了研究QD-LED器件的特性

本文采用523 nm波长的CdSe/ZnS核壳型量子点为发光层、poly-TPD为空穴传输层、ZnO为电子传输层

制备了绿光量子点LED

并表征了器件的特性。

Abstract

CdSe/ZnS core-shell QDs (523 nm) were used as emissive layers

poly-TPD as hole-transport layer (HTL) and ZnO as electron-transport layer(ETL). Green-emitting devices based on CdSe QDs were fabricated and characterized. Luminescence of semiconductor nanocrystal quantum dots (QDs) were used as luminescent centers in organic light emitting devices (OLEDs). By changing the size of QD

this OLED can emit visible to near-infrared spectrum with a narrow full-width at half-maximum (FWHM) of ~30 nm. However

the brightness

efficiency

and lifetime of LEDs need to be improved to meet the requirements of commercialization in the near future.

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Keywords

references

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