GU Wen, SHI Ji-feng, LI Xi-feng, ZHANG Jian-hua. Effect of AgO<sub><em>x</em></sub> Interface Insertion Layer on The Performance of LEDs with Ga-doped ZnO Electrode[J]. Chinese Journal of Luminescence, 2012,(10): 1127-1131
GU Wen, SHI Ji-feng, LI Xi-feng, ZHANG Jian-hua. Effect of AgO<sub><em>x</em></sub> Interface Insertion Layer on The Performance of LEDs with Ga-doped ZnO Electrode[J]. Chinese Journal of Luminescence, 2012,(10): 1127-1131 DOI: 10.3788/fgxb20123310.1127.
Effect of AgOx Interface Insertion Layer on The Performance of LEDs with Ga-doped ZnO Electrode
GZO transparent conductive layers were deposited on p-GaN surface by magnetron sputtering.AgO
x
thin films were inserted between p-GaN and GZO to improve the performance of LED devices.The AgO
x
/GZO thin film exhibited low resistivity (5.8×10
-4
Ω·cm) and high transmittance (above 80% in visible range) after nitrogen annealing.The AgO
x
interface insertion layer could effectively reduce the contact barrier
leading to good Ohmic contact characteristics of GZO/p-GaN and improved photoelectric performance of LEDs.With 50 mA injection current
the forward voltage reduced from 9.68 V to 6.92 V and the luminous intensity increased by 13.5% compared with conventional GZO electrode LEDs.
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references
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