A Green Phosphorescent Organic Lighting Emitting Device with Double Hole Injection Layers

ZHANG Jing; ZHANG Fang-hui

doi:10.3788/fgxb20123310.1107

您当前的位置：

首页 >

文章列表页 >

A Green Phosphorescent Organic Lighting Emitting Device with Double Hole Injection Layers

更新时间：2020-08-12

- A Green Phosphorescent Organic Lighting Emitting Device with Double Hole Injection Layers
- Chinese Journal of Luminescence Vol. 33, Issue 10, Pages: 1107-1111(2012)
- 作者机构：
  
  陕西科技大学电气与信息工程学院,陕西西安,710021
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20123310.1107
  CLC： TN383+.1
- Received：29 June 2012，
  
  Revised：30 July 2012，
  
  Published：10 October 2012
- 稿件说明：
移动端阅览
张静, 张方辉. 双空穴注入的绿色磷光有机电致发光器件[J]. 发光学报, 2012,(10): 1107-1111

ZHANG Jing, ZHANG Fang-hui. A Green Phosphorescent Organic Lighting Emitting Device with Double Hole Injection Layers[J]. Chinese Journal of Luminescence, 2012,(10): 1107-1111
张静, 张方辉. 双空穴注入的绿色磷光有机电致发光器件[J]. 发光学报, 2012,(10): 1107-1111 DOI： 10.3788/fgxb20123310.1107.

ZHANG Jing, ZHANG Fang-hui. A Green Phosphorescent Organic Lighting Emitting Device with Double Hole Injection Layers[J]. Chinese Journal of Luminescence, 2012,(10): 1107-1111 DOI： 10.3788/fgxb20123310.1107.

摘要

制作了一种新型绿色磷光有机电致发光二极管。器件结构为ITO/HAT-CN(

nm)/MoO

(30nm)/NPB(40nm)/TCTA(10nm)/CPB:GIr1(30nm

14%)/BCP(10nm)/Alq

(25nm)/LiF(1nm)/Al(100nm)

其中

15nm。电流密度-电压-亮度特性表明该结构有利于降低驱动电压和增加器件亮度。当HAT-CN厚度为12nm时

器件的最高亮度可以达到32480cd/m

起亮电压为3.5V左右

发光效率为24.2cd/A。所设计的空穴型器件证明该器件结构具有很好的空穴注入和传输特性。

Abstract

A novel structure of green phosphorescent organic light-emitting diode was fabricated.The structure of the devices was ITO/HAT-CN(

nm)/MoO

(30 nm)/NPB(40 nm)/TCTA(10 nm)/CPB:GIr1(30 nm

14%)/BCP(10 nm)/Alq

(25 nm)/LiF(1 nm)/Al(100 nm)

in which

was 0

15 nm

respectively.The current density-voltage-luminance(

J-V-L

) performance shows that this structure is beneficial to the reduction of the driving voltage and the enhancement of the luminance.It was found that the best thickness was 12 nm HAT-CN layer

the highest luminance of the device was 32 480 cd/m

at 15 V

the turn-on voltage of this device was 3.5 V and the current efficiency was 24.2 cd/A.Hole-only device was fabricated to verify the enhancement of hole injection and transport properties of this structure.

关键词

Keywords

references

van Slyke S A,Chen C H,Tang C W.Organic electroluminescent devices with improved stability [J]. Appl.Phys.Lett.,1996,69(15):2160-2162.

Shirota Y,Kuwabara Y,India H, et al. Multilayered organic electroluminescent device using a novel starburst molecule,4,4,4-tris(3-methylphenylphenylamino) triphenylamine as a hole transport material [J]. Appl.Phys.Lett.,1994,65(7):807-809.

Liao Y Q,Chen H,Liu X Y.Effect of PrF3 anode buffer layer on the performance of OLED [J]. Chin.J.Lumin.(发光学报),2011,32(9):929-933 (in Chinese)

Chu C W,Li S H,Chen C W,et al. High-performance organic thin-film transistors with metal oxide/metal bilayer electrode [J]. Appl.Phys.Lett.,2005,87(19):193508-1-3.

Meyer J,Hamwi S,Bülow T,et al. Highly efficient simplified organic light emitting diodes [J]. Appl.Phys.Lett.,2007,91(11):11356-1-3.

Hoping M,Schildknecht C,Gargouri H,et al. Transition metal oxides as charge injecting layer for admittance spectroscopy [J]. Appl.Phys.Lett.,2008,92(21):213306-1-3.

Lee H,Cho S W,Han K,et al. The origin of the hole injection improvements at indium tin oxide/molybdenum trioxide/N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine interfaces [J]. Appl.Phys.Lett.,2008,93(4):043308-1-3.

Hou L T,Liu P Y,Zhang J L,et al. Improved hole-injection contact by employing an ultra-thin MoO3 carrier injection layer [J]. Chin.J.Lumin.(发光学报), 2010,31(3):326-330 (in English).

Park S M,Kim Y H,Hak Y,et al. Insertion of an organic interlayer for hole current enhancement inverted organic light emitting devices [J]. Appl.Phys.Lett.,2010,97(6):063308-1-3.

Liao L S,Slusarek W K,Hatwar T K,et al. Tandem organic light-emitting diode using hexaazatriphenylene hexacarbonitrile in the intermediate connector [J]. Adv.Mater.,2008,20(2):324-329.

Liao L S,Klubek K P.Power efficiency improvement in a tandem organic light-emitting diode [J]. Appl.Phys.Lett.,2008,92(22):223311-1-3.

Niu L B,Guan Y X.Fullerene-doped hole transport NPB layer in organic light-emitting devices [J]. Acta Phys.Sin.(物理学报), 2009,58(7):4931-4935 (in Chinese).

Ding L,Zhang F H,Zhang M L,et al. A novel high-efficiency organic lighting emitting devices with double injection layers [J]. Journal of Optoelectronics·Laser (光电子·激光),2011,22(12):1761-1764 (in Chinese).

Chen J X,Chen J D,Wu Z Z. White OLED for Lighting [M].Shanghai:Shanghai Jiao Tong University Press,2011 (in Chinese).

Fan Z Q,Cheng C H,Shen R S,et al. Near-infrared organic electrophosphorescenct diodes based on Tetra-substituted copper phthalocyanine [J]. Journal of Optoelectronics·Laser (光电子·激光), 2010,21(4):524-528 (in Chinese).

Kim Y K,Kim J W,Park Y S.Energy level alignment at a charge generation interface between 4,4'-bis(N-phenyl-1-naphthylamino)biphenyl and 1,4,5,8,9,11-hexaazatripheny lene-hexacarbonitrile [J]. Appl.Phys.Lett.,2009,94 (6):063305-1-3.

Views

127

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

No data

Related Author

No data

Related Institution

No data

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰