Preparation and Characteristics of High Work-function and Ultraviolet-luminescence Lanthanum Titanate-doped Indium Oxide Thin Films

TIAN Miao-miao; LI Chun-jie; HE Xiao-guang; GUO Feng; FAN Yi; WANG Ning

doi:10.3788/fgxb20123310.1055

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Preparation and Characteristics of High Work-function and Ultraviolet-luminescence Lanthanum Titanate-doped Indium Oxide Thin Films

更新时间：2020-08-12

- Preparation and Characteristics of High Work-function and Ultraviolet-luminescence Lanthanum Titanate-doped Indium Oxide Thin Films
- Chinese Journal of Luminescence Vol. 33, Issue 10, Pages: 1055-1059(2012)
- 作者机构：
  
  1. 中国科学院长春应用化学研究所高分子物理与化学国家重点实验室,吉林长春,130022
  2. 长春师范学院物理学院,吉林长春,130032
  3. 中国科学院长春应用化学研究所高分子复合材料工程实验室,吉林长春,130022
  4. 发光学及应用国家重点实验室中国科学院长春光学精密机械与物理研究所,吉林长春,130033
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20123310.1055
  CLC： TN383+.1
- Received：07 August 2012，
  
  Revised：24 August 2012，
  
  Published：10 October 2012
- 稿件说明：
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田苗苗, 李春杰, 贺小光, 郭峰, 范翊, 王宁. 高功函数的钛酸镧掺杂氧化铟透明导电薄膜的制备与光电特性研究[J]. 发光学报, 2012,(10): 1055-1059

TIAN Miao-miao, LI Chun-jie, HE Xiao-guang, GUO Feng, FAN Yi, WANG Ning. Preparation and Characteristics of High Work-function and Ultraviolet-luminescence Lanthanum Titanate-doped Indium Oxide Thin Films[J]. Chinese Journal of Luminescence, 2012,(10): 1055-1059
田苗苗, 李春杰, 贺小光, 郭峰, 范翊, 王宁. 高功函数的钛酸镧掺杂氧化铟透明导电薄膜的制备与光电特性研究[J]. 发光学报, 2012,(10): 1055-1059 DOI： 10.3788/fgxb20123310.1055.

TIAN Miao-miao, LI Chun-jie, HE Xiao-guang, GUO Feng, FAN Yi, WANG Ning. Preparation and Characteristics of High Work-function and Ultraviolet-luminescence Lanthanum Titanate-doped Indium Oxide Thin Films[J]. Chinese Journal of Luminescence, 2012,(10): 1055-1059 DOI： 10.3788/fgxb20123310.1055.

摘要

制备了一种新型的具有高功函数的掺钛酸镧(LaTiO

)的氧化铟(ILTO)三元透明导电氧化物薄膜

并研究了其光电特性。EDX能谱测试结果证实了样品中In、La及Ti的存在

薄膜的掺杂具有良好的均匀性及一致性。由原子力显微镜测试可知

在一个5μm×5μm的扫描区域内

样品的表面粗糙度(RMS)较小

为1nm量级。ILTO薄膜在可见光区域的平均透过率超过了85%

其功函数接近于金的功函数(5.2eV左右)

远高于目前商业化的ITO的功函数(4.5~4.7eV)。由于导电薄膜的功函数在光电器件中对异质结界面的势垒高度有着直接影响

较高的功函数可以提高载流子的注入及抽取能力

因此采用ILTO作为光电器件的阳极将有望改善器件的性能。

Abstract

A novel high work-function (WF) transparent conducting oxides

lanthanum titanate (LaTiO

)-doped indium oxide (ILTO)

with notable electrical and optical features

synthesized by a double electron beam evaporation associated with End-Hall ion assisted deposited technology is introduced.Its room-temperature ultraviolet photoluminescence (PL) with a peak at around 386 nm are determined.A high WF near 5.20 eV is determined for the as-deposited ILTO samples.As far as we know

this is the first report on PL emission at room temperature as well as high-WF properties in a multi-doping transparent oxide semiconductor.The effects of high WF afford more opportunities to develop and optimize the performance of organic photoelectric devices

and facilitate the fabrication process of devices.

关键词

Keywords

references

Lehmann H W,Wilmer R.Preparation and properties of reactively co-sputtered transparent conducting films [J]. Thin Solid Films,1975,27(27):359-363.

Vossen J L.RF sputtered transparent conductor the system In2O3-SnO2 [J]. RCA Rev.,1971,32(32):289-295.

Agnihotri O P,Sharma A K,Gupta B K,et al. The effect of tin additions on indium oxide selective coatings [J]. J.Phys. D:Appl.Phys., 1978,11(36):643-647.

Chiou B S,Hsieh S T,Wu W F.Deposition of indium tin oxide films on acrylic substrates by radiofrequency magnetron sputtering [J]. J.Amer.Soc.,1994,77(25):1740-1742.

Mizuhshi M.Electrical properties of vacuum-deposited indium oxide and indium tin oxide films [J]. Thin Solid Films,1980,70(17):91-99.

Kumar C V R V,Mansingh A.Effect of target-substrate distance on the growth and properties of RF-sputtered indium tin oxide films [J]. J.Appl.Phy.,1989,65(35):1270-1280.

Yi C H,Yasui I,Shigesato Y.Oriented tin-doped indium oxide films on <001> preferred oriented polycrystalline ZnO films [J]. Jpn.J.Appl.Phys.,1995,34(28):1638-1642.

Fan J C C,Goodenough J B.X-ray photoemission spectroscopy studies of Sn-doped indium-oxide films [J]. J.Appl.Phys.,1977,48(16):3524-3531.

Sreenivas K,Rao T S,Mansnigh A.Preparation and characterization of RF sputtered indium tin oxide films [J]. J.Appl.Phys.,1985,57(21):384-392.

Wu W F,Chiou B S.Properties of RF magnetron sputtered ITO films without in-situ substrate heating and post-deposition annealing [J]. Thin Solid Films,1994,247(45):201-207.

Hamberg I,Granqvist C G.Frontier of transparent conductive oxide thin films [J]. J.Appl.Phys.,1986,60(35):123-127.

Higuchi M,Uekusa S,Nakano R,et al. Micrograin structure influence on electrical characteristics of sputtered indium tin oxide films [J]. J.Appl.Phys.,1993,74(18):6710-6713.

Shin S H,Shin J H,Park K J,et al. Low resistivity indium tin oxide films deposited by unbalanced DC magnetron sputtering [J]. Thin Solid Film,1999,341(24):225-229.

Bender M,Trube J,Stollenwerk J.Deposition of transparent and conducting indium-tin-oxide films by the RF-superimposed DC sputtering technology [J]. Thin Solid Films, 1999,354(31):100-105.

Balasubramanian N,Subrahmanyam A.Effect of substrate temperature on the electrical and optical properties of reactively evaporated indium tin oxide films [J]. Mat.Sci.Eng. B,1988,1(8):279-281.

Haitjema H,Elich J J.Physical properties of pyrolytically sprayed tin-doped indium oxide coatings [J]. Thin Solid Films,1991,205(10):93-100.

Kim D,Han Y,Cho J S,et al. Low temperature deposition of ITO thin films by ion beam sputtering [J].Thin Solid Films, 2000,378(13):81-86.

Tian M M,Fan Y,Liu X Y.Fabrication and characteristics of transparent conducting bismuth-doped thin indium oxide film [J]. Chin.J.Lumin.(发光学报), 2010,31(4):605-608 (in Chinese).

Tian M M,Liu X Y.High efficiency tandem organic light-emitting diode based on a new charge connecting layer [J]. Chin.J.Lumin.(发光学报), 2010,31(5):651-654 (in Chinese).

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Related Institution

State Key Laboratory of Luminescence and Application, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences

Research Institute of Changchun University of Science and Technology in Chongqing

School of Materials Science and Engineering， Changchun University of Science and Technology

School of Flexible Electronics（Future Technologies） & Institute of Advanced Materials（IAM）， Nanjing Tech University

School of Physics， Northeast Normal University

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