Color Center Creation in SiO2 Under Irradiation with Swift Heavy Ions:Dependence on Energy Loss

SONG Yin; MENG Yan-cheng; ZHANG Chong-hong; YANG Yi-tao; LI Jin-yu; GOU Jie; HE De-yan

doi:10.3788/fgxb20123310.1049

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Color Center Creation in SiO₂ Under Irradiation with Swift Heavy Ions:Dependence on Energy Loss

更新时间：2020-08-12

- Color Center Creation in SiO₂ Under Irradiation with Swift Heavy Ions:Dependence on Energy Loss
- Chinese Journal of Luminescence Vol. 33, Issue 10, Pages: 1049-1054(2012)
- 作者机构：
  
  1. 兰州大学物理科学与技术学院, 甘肃兰州 730000
  2. 中国科学院近代物理研究所, 甘肃兰州 730000
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20123310.1049
  CLC： O469
- Received：21 June 2012，
  
  Revised：13 August 2012，
  
  Published：10 October 2012
- 稿件说明：
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宋银, 孟彦成, 张崇宏, 杨义涛, 李锦钰, 缑洁, 贺德衍. 重离子辐照SiO2通过能量损失产生发光色心的研究[J]. 发光学报, 2012,(10): 1049-1054

SONG Yin, MENG Yan-cheng, ZHANG Chong-hong, YANG Yi-tao, LI Jin-yu, GOU Jie, HE De-yan. Color Center Creation in SiO2 Under Irradiation with Swift Heavy Ions:Dependence on Energy Loss[J]. Chinese Journal of Luminescence, 2012,(10): 1049-1054
宋银, 孟彦成, 张崇宏, 杨义涛, 李锦钰, 缑洁, 贺德衍. 重离子辐照SiO2通过能量损失产生发光色心的研究[J]. 发光学报, 2012,(10): 1049-1054 DOI： 10.3788/fgxb20123310.1049.

SONG Yin, MENG Yan-cheng, ZHANG Chong-hong, YANG Yi-tao, LI Jin-yu, GOU Jie, HE De-yan. Color Center Creation in SiO2 Under Irradiation with Swift Heavy Ions:Dependence on Energy Loss[J]. Chinese Journal of Luminescence, 2012,(10): 1049-1054 DOI： 10.3788/fgxb20123310.1049.

摘要

通过红外光谱和荧光发射光谱分别对600keV、4MeV和5MeVKr离子辐照的SiO

进行发光特性的研究。在低能量辐照体系中

简单色心(F

色心)的形成在损伤过程中占据主导地位

其主要诱发蓝光发射带;在高能离子辐照条件下

离子径迹上的能量密度较大

因此缺陷浓度的增大产生了一些缺陷团簇和离子径迹

形成了复杂的色心(F

和F

色心等)并诱发了强烈的绿光发射带和红光发射带。该实验结果与能量损失过程中统一热峰理论模型(一个综合的基于电子能损与核能损的非弹性碰撞模型和弹性碰撞模型)的模拟结果能够很好地吻合

表明在keV~MeV能区上存在电子能损过程与核能损过程的协同效应。

Abstract

SiO

single crystals that irradiated with 600 keV

4 MeV and 5 MeV Kr ions were investigated in 320 kV high voltage Experimental Platform (IMP

Lanzhou) by infrared spectra and fluorescence spectroscopes.In the low-energy region

single ion tracks are well separated and the damage process is dominated by the formation of simple color centers such as F

centers.For the high energy ions

the energy density in ion tracks produced at high stopping power is larger

and consequently the defect concentration increases significantly.At higher defect densities

the distance between single defects is smaller facilitating aggregation of individual electron centers to defect clusters and also defect annihilation by recombination of hole and electron centers.The latter process determines the limited efficiency of color-center creation under heavy-ion irradiation.Using the unified thermal spike model

it is possible to fully describe the experimental data

which clearly demonstrate a synergy between the nuclear energy loss and the electronic energy loss.

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Keywords

references

van Dillen T,Polman A,Fukarek W,et al. Energy-dependent anisotropic deformation of colloidal silica particles under MeV Au irradiation [J]. Appl.Phys.Lett., 2001,78(7):910-912.

van Dillen T,Polman A,Kats C M V,et al. Ion beam-induced anisotropic plastic deformation at 300 keV [J]. Appl.Phys.Lett., 2003,83(21):4315-4317.

Meftah A,Brisard F,Costantini J M,et al. Swift heavy ions in magnetic insulators:A damage-cross-section velocity effect [J]. Phys.Rev.B,1993,48(2):920-925.

Thevenard P,Guiraud G,Dupuy C H S,et al. Assumption of F-centre creation in LiF bombarded with high energy particles [J]. Rad.Eff.,1977,32(1):83-90.

Toulemonde M,Weber W J,Li G S,et al. Synergy of nuclear and electronic energy losses in ion-irradiation processes:The case of vitreous silicon dioxide [J]. Phys.Rev. B,2011,83(5):054106-1-9.

Busch M C,Slaoui A,Siffert P,et al. Structural and electrical damage induced by high-energy heavy ions in SiO2/Si structures [J]. J.Appl.Phys.,1992,71(6):2596-2601.

Benyagoub A,Lffler S,Rammensee M,et al. Plastic deformation in SiO2 induced by heavy-ion irradiation [J]. Nucl.Instrum.Methods,1992,65(1-4):228-231.

Benyagoub A,Klaumunzer S,Toulemonde M.Radiation-induced compaction and plastic flow of vitreous silica [J]. Nucl.Instrum.Methods Phys.Res.B,1998,146(1-4):449-454.

Schwartz K,Trautmann C,El-Said A S,et al. Color-center creation in LiF under irradiation with swift heavy ions:Dependence on energy loss and fluence [J]. Phys.Rev. B,2004,70(18):184104-1-9.

Liu C B,Wang Z G.Effects of swift heavy ion irradiations on the photoluminescent properties of amorphous SiO2 thin films [J]. Chin.J.Lumin.(发光学报), 2011,32(6):608-611 (in Chinese).

Udelson B J,Creedon J E,French J C.Microwave measurements of the properties of a dc hydrogen discharge [J]. Adv.Phys.,1957,28(6):717-722.

Gervais B.SiO2 on Silicon:Behavior Under Heavy Ion Irradiation.Caen:University of Caen,1993.

Schwartz K,Trautmann C,El-Said A S,et al. Color-center creation in LiF under irradiation with swift heavy ions:Dependence on energy loss and fluence [J]. Phys.Rev.B,2004,70(18):184104-1-9.

Liao L S,Bao X M,Zhen X Q,et al. Blue luminescence and annealing characteristic of Si implanted SiO2 films on crystalline silicon [J]. Chinese Journal of Semiconductors (半导体学报), 1996,17(10):789-792 (in Chinese).

Fan X P,Qian J,Yao H W.Study on infrared spectra of SiO2-based glass film prepared by sol-gel process [J]. Materials Science & Engineering,2002,20(3):325-327.

Zhang J,Yao S T,Liu Y,et al. Transmission and diffuse reflectance Fourier transform infrared spectrum study on nano-SiO2 and its modifier [J]. Chin.J.Spectrosc.Lab.(光谱实验室),2008,25(5):869-873 (in Chinese).

Jiang C Z,Fan X J.In-situ TEM observation of silver nanocrystals in an Ag-implanted SiO2 film [J]. Surface and Coatings Technology,2000,131(1-3):330-333.

Toulemonde M,Balanzat E,Bouffard S.Damage induced by high electronic stopping power in SiO2 quartz [J]. Nucl.Instr.and Meth.B,1990,46(1-4):64-68.

Kluth P,Schnohr C S,Pakarinen O H,et al. Fine structure in swift heavy ion tracks in amorphous SiO2 [J]. Phys.Rev.Lett.,2008,101(17):175503-1-5.

Rotaru C.SiO2 Sur Silicium:Comportement Sous Irradiation Avec Des Ions Lourds.Caen:University of Caen,2004.

Mieskes H D,Assmann W,Gruner F.Nanoscale strain distribution at the Ag/Ru(0001) interface [J]. Phys.Rev.B,2003,67(15):155414-1-4.

Meftah A,Brisard F,Costantini J M,et al. Track formation in SiO2 quartz and the thermal-spike mechanism [J]. Phys.Rev.B,1994,49(18):12457-12463.

Waligorski M P R,Hann R N,Katz R.The radial distribution of dose around the path of a heavy ion in liquid water [J].Nucl.Tracks Rad.Meas., 1986,11(6):309-319.

Meftah A,Costantini J,Khalfaoui M N,et al. Experimental determination of track cross-section in Gd3Ga5O12 and comparison to the inelastic thermal spike model applied to several materials [J]. Nucl.Instrum.Methods Phys.Res.B,2005,237(3-4):563-574.

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Institute of Modern Physics, Chinese Academy of Sciences

School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China

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