The Photoresponsive Organic Field-effect Transistors Based on Copper Phthalocyanine

XIE Ji-peng; LV Wen-li; YANG Ting; YAO Bo; PENG Ying-quan

doi:10.3788/fgxb20123309.0991

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The Photoresponsive Organic Field-effect Transistors Based on Copper Phthalocyanine

更新时间：2020-08-12

- The Photoresponsive Organic Field-effect Transistors Based on Copper Phthalocyanine
- Chinese Journal of Luminescence Vol. 33, Issue 9, Pages: 991-995(2012)
- 作者机构：
  
  1. 兰州大学物理学院微电子研究所,甘肃兰州,730000
  2. 空军大连通信士官学校,辽宁大连,116600
  3. 兰州大学磁学与磁性材料教育部重点实验室,甘肃兰州,730000
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20123309.0991
  CLC： TN386
- Received：17 May 2012，
  
  Revised：12 July 2012，
  
  Published：10 September 2012
- 稿件说明：
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谢吉鹏, 吕文理, 杨汀, 姚博, 彭应全. 基于酞菁铜的有机光敏场效应管[J]. 发光学报, 2012,33(9): 991-995

XIE Ji-peng, LV Wen-li, YANG Ting, YAO Bo, PENG Ying-quan. The Photoresponsive Organic Field-effect Transistors Based on Copper Phthalocyanine[J]. Chinese Journal of Luminescence, 2012,33(9): 991-995
谢吉鹏, 吕文理, 杨汀, 姚博, 彭应全. 基于酞菁铜的有机光敏场效应管[J]. 发光学报, 2012,33(9): 991-995 DOI： 10.3788/fgxb20123309.0991.

XIE Ji-peng, LV Wen-li, YANG Ting, YAO Bo, PENG Ying-quan. The Photoresponsive Organic Field-effect Transistors Based on Copper Phthalocyanine[J]. Chinese Journal of Luminescence, 2012,33(9): 991-995 DOI： 10.3788/fgxb20123309.0991.

摘要

制备了基于酞菁铜(CuPc)的有机光敏场效应晶体管

对器件的光敏特性进行了研究。实验结果表明

基于金源漏电极的器件

在波长655 nm

光强100 mW/cm

的光照下

明/暗电流比约为0.4

光响应度约为2.55 mA/W;而铝为源漏电极的器件

可以获得高达10

的明/暗电流比

但光响应度降低为0.39 mA/W。

Abstract

Organic field-effect transistors (OFETs) based on copper phthalocyanine were fabricated and their current-voltage characteristics were measured in dark/under illumination. The results showed that OFETs with Au as source/drain electrodes exhibited a photo-current/dark-current ratio of 0.4 and a photoresponsivity of 2.55 mA/W under illumination by a laser diode with a wavelength of 655 nm and power density of 100 mW/cm

; however

OFETs with Al as source/drain electrodes exhibited a photo-current/dark-current ratio up to 10

and a much lower photoresponsivity of 0.39 mA/W under the same conditions. The tremendous increase of photo-current/dark-current ratio is ascribed to the decrease of dark-current caused by Schottky contacts between Al source/drain electrodes and CuPc.

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references

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