WANG Peng-cheng, XU Hua-wei, ZHANG Jin-long, NING Yong-qiang. In-situ Monitoring and Determination of AlGaAs Composition During MOCVD Growth[J]. Chinese Journal of Luminescence, 2012,33(9): 985-990
WANG Peng-cheng, XU Hua-wei, ZHANG Jin-long, NING Yong-qiang. In-situ Monitoring and Determination of AlGaAs Composition During MOCVD Growth[J]. Chinese Journal of Luminescence, 2012,33(9): 985-990 DOI: 10.3788/fgxb20123309.0985.
In-situ Monitoring and Determination of AlGaAs Composition During MOCVD Growth
As sample were grown by metal-organic chemical vapor deposition (MOCVD) under the monitor of time resolved reflectance anisotropy spectroscopy (RAS) and normalized reflectance. During the growth
a significant dependence of the RAS and normalized reflectance signals on the aluminium composition has been found
which can be used to optimize the growth processes. The experimental results indicate that the period of normalized reflectance oscillation was directly related to the composition and growth rate. The first minimum of the normalized reflectance oscillation of Al
x
Ga
1-
x
As almost linearly with aluminium composition and could be used to determine the starting value of graded aluminium composition. The compositions and growth rate of Al
x
Ga
1-
x
As are calculated by normalized reflectance transient spectra
the value is in excellent agreement with the experimental data obtained by ex-situ scanning electron microscope (SEM) and high resolution X-ray diffraction (HRXRD).
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references
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