Effect of Au Interlayer Annealing Temperature on Structural, Electrical and Optical Properties of ZnO/Au/ZnO Films

ZHANG Shi-kai; ZHANG Bao-lin; SHI Zhi-feng; WANG Hui; XIA Xiao-chuan; WU Bin; CAI Xu-pu; GA

doi:10.3788/fgxb20123309.0934

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Effect of Au Interlayer Annealing Temperature on Structural, Electrical and Optical Properties of ZnO/Au/ZnO Films

更新时间：2020-08-12

- Effect of Au Interlayer Annealing Temperature on Structural, Electrical and Optical Properties of ZnO/Au/ZnO Films
- Chinese Journal of Luminescence Vol. 33, Issue 9, Pages: 934-938(2012)
- 作者机构：
  
  1. 大连理工大学物理与光电工程学院,辽宁大连,116024
  2. 集成光电子学国家重点联合实验室吉林大学电子科学与工程学院,吉林长春,130012
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20123309.0934
  CLC： O484.4
- Received：22 May 2012，
  
  Revised：12 July 2012，
  
  Published：10 September 2012
- 稿件说明：
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张仕凯, 张宝林, 史志锋, 王辉, 夏晓川, 伍斌, 蔡旭浦, 高榕, 董鑫, 杜国同. Au层退火温度对ZnO/Au/ZnO多层膜的结构、光学及电学性质的影响[J]. 发光学报, 2012,33(9): 934-938

ZHANG Shi-kai, ZHANG Bao-lin, SHI Zhi-feng, WANG Hui, XIA Xiao-chuan, WU Bin, CAI Xu-pu, GAO Rong, DONG Xin, DU Guo-tong. Effect of Au Interlayer Annealing Temperature on Structural, Electrical and Optical Properties of ZnO/Au/ZnO Films[J]. Chinese Journal of Luminescence, 2012,33(9): 934-938
张仕凯, 张宝林, 史志锋, 王辉, 夏晓川, 伍斌, 蔡旭浦, 高榕, 董鑫, 杜国同. Au层退火温度对ZnO/Au/ZnO多层膜的结构、光学及电学性质的影响[J]. 发光学报, 2012,33(9): 934-938 DOI： 10.3788/fgxb20123309.0934.

ZHANG Shi-kai, ZHANG Bao-lin, SHI Zhi-feng, WANG Hui, XIA Xiao-chuan, WU Bin, CAI Xu-pu, GAO Rong, DONG Xin, DU Guo-tong. Effect of Au Interlayer Annealing Temperature on Structural, Electrical and Optical Properties of ZnO/Au/ZnO Films[J]. Chinese Journal of Luminescence, 2012,33(9): 934-938 DOI： 10.3788/fgxb20123309.0934.

摘要

采用金属有机化学气相沉积(MOCVD)技术在蓝宝石衬底上制备出晶体质量较好的透明导电的ZnO/Au/ZnO(ZAZ)多层膜

其中

Au夹层是通过射频磁控溅射的方法获得。通过对Au夹层进行不同温度的退火处理

研究了Au层退火温度对ZAZ多层膜的结构特性、电学性能和光学特性的影响。利用原子力显微镜(AFM)、扫描电子显微镜(SEM)、X射线衍射(XRD)仪、霍尔效应测试和透射谱分析等测试手段对ZAZ多层膜的性质进行了分析。测试结果表明

在200 ℃下对Au夹层进行快速退火处理

多层膜的结构、电学和光学性质达到最优

表面等离子体效应也更明显。其中

XRD(002)衍射峰的半高宽为0.14°

电阻率为2.7×10

-3

Ω·cm

载流子浓度为1.07×10

-3

可见光区平均透过率为75.3%。

Abstract

The transparent and conductive ZnO/Au/ZnO (ZAZ) multilayer films were deposited on the sapphire substrates by MOCVD and RF magnetron sputtering. All the ZnO films were fabricated by MOCVD

and the thickness of each ZnO film was approximately 150 nm. The Au interlayers were fabricated by RF magnetron sputtering

annealed at room temperature

200 and 300 ℃. The thickness of each Au interlayer was 2 nm. The effects of the annealing temperature on structural

electrical and optical properties of ZAZ films were investigated. When the annealing temperature was 200 ℃

the FWHM of ZAZ films were 0.14°

which exhibited the better crystal quality and

-axis pre-ferential orientation. Moreover

the lowest resistivity was 2.7×10

-3

Ω·cm with a carrier concentration of 1.07×10

-3

and the visible transmittance was 75.3%. This indicated the multilayer films had the best properties when the annealing temperature was 200 ℃.

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Keywords

references

Gadisa A, Svensson M, Andersson M R, et al. Influence of buffer layers on the performance of polymer solar cells [J]. Appl. Phys. Lett., 2004, 84(19):3906-3909.

Adachi C, Nagai K, Tamoto N. Molecular design of hole transport materials for obtaining high durability in organic electroluminescent diodes [J]. Appl. Phys. Lett., 1995, 66(20):2679-2681.

Minami T. Present status of transparent conducting oxide thin-film development for indium-tin-oxide (ITO) substitute [J]. Thin Solid Films, 2008, 516(17):5822-5828.

Lv Y M, Cao P J, Jia F, et al. Optical and electrical properties of heavy-doped AZO transparent conducting thin films [J]. Chin. J. Lumin.(发光学报), 2011, 32(4):307-312 (in Chinese).

Suzuki S, Miyata T, Ishii M, et al. Transparent conducting V-co-doped AZO thin films prepared by magnetron sputtering [J]. Thin Solid Films, 2003, 434(1-2):14-19.

Gong L, Lu J, Ye Z. Room-temperature growth and optoelectronic properties of GZO/ZnO bilayer films on polycarbonate substrates by magnetron sputtering [J]. Solar Energy Materials and Solar Cells, 2010, 94(7):1282-1285.

Zhang D Y, Wang P P, Murakami R, et al. Effect of an interface charge density wave on surface plasmon resonance in ZnO/Ag/ZnO thin films [J]. Appl. Phys. Lett., 2010, 96(23):233114-1-3.

Chan Y F, Xu H J, Cao L, et al. ZnO/Si arrays decorated by Au nanoparticles for surface-enhanced Raman scattering study [J]. Appl. Phys., 2012, 111(3):033104-1-5.

Jiang X J, Zhang L L, Wang T, et al. High surface-enhanced Raman scattering activity from Au-decorated individual and branched tin oxide nanowires [J]. Appl. Phys., 2009, 106(10):104316-1-5.

Wang X T, Shi W S, She G W, et al. Surface-enhanced Raman scattering (SERS) on transition metal and semiconductor nanostructures [J]. Chem. Phys., 2012, 14(17):5891-5901.

Tian M M, Fan Y, Liu X Y. Fabrication and characteristics of transparent conducting bismuth-doped thin indium oxide Film [J]. Chin. J. Lumin.(发光学报), 2010, 31(4):605-608 (in Chinese).

Lee J, Li Z, Metson J, et al. Structural electrical and transparent properties of ZnO thin films prepared by magnetron sputtering [J]. Current Applied Physics, 2004, 4(2-4):398-401.

Cullity B D. Elements of X-ray Diffractions [M]. MA, USA: Addison-Wesley, 1978.

Yu X H, Ma J, Ji F, et al. Thickness dependence of properties of ZnO∶Ga films deposited by r.f. magnetron sputtering [J]. Journal of Functional Materials (功能材料), 2005, 36(2):241-243 (in Chinese).

Lin Y S, Tseng W C. Effect of Al nanoparticles on the microstructure, electrical and optical properties of AZO/Al/AZO Trilayer thin film [J]. Electronic Materials, 2012, 41(3):437-441.

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