Organic Thin Film Transistors Based on Blends of Poly(3-hexylthiophene) and Polycaprolactone

WANG Xiao-hong; QIU Long-zhen

doi:10.3788/fgxb20123308.0857

您当前的位置：

首页 >

文章列表页 >

Organic Thin Film Transistors Based on Blends of Poly(3-hexylthiophene) and Polycaprolactone

更新时间：2020-08-12

- Organic Thin Film Transistors Based on Blends of Poly(3-hexylthiophene) and Polycaprolactone
- Chinese Journal of Luminescence Vol. 33, Issue 8, Pages: 857-862(2012)
- 作者机构：
  
  特种显示技术教育部重点实验室, 特种显示技术国家工程实验室, 现代显示技术省部共建国家重点实验室培育基地, 合肥工业大学光电技术研究院,安徽合肥,230009
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20123308.0857
  CLC： TN321+.5
- Received：28 April 2012，
  
  Revised：24 June 2012，
  
  Published：10 August 2012
- 稿件说明：
移动端阅览
王晓鸿, 邱龙臻. 基于聚噻吩/聚己内酯共混物的有机薄膜晶体管[J]. 发光学报, 2012,33(8): 857-862

WANG Xiao-hong, QIU Long-zhen. Organic Thin Film Transistors Based on Blends of Poly(3-hexylthiophene) and Polycaprolactone[J]. Chinese Journal of Luminescence, 2012,33(8): 857-862
王晓鸿, 邱龙臻. 基于聚噻吩/聚己内酯共混物的有机薄膜晶体管[J]. 发光学报, 2012,33(8): 857-862 DOI： 10.3788/fgxb20123308.0857.

WANG Xiao-hong, QIU Long-zhen. Organic Thin Film Transistors Based on Blends of Poly(3-hexylthiophene) and Polycaprolactone[J]. Chinese Journal of Luminescence, 2012,33(8): 857-862 DOI： 10.3788/fgxb20123308.0857.

摘要

选择聚3-己基噻吩(P3HT)/聚己内酯(PCL)双晶共混体系制备了不同配比的共混物有机薄膜晶体管。电学性能研究发现

随着共混物中P3HT含量降低

薄膜晶体管的场效应迁移率、开关电流比和阈值电压等性能缓慢降低。当P3HT质量分数为40%时

共混物薄膜仍具有较好的场效应性能

迁移率为0.008 cm

·V

-1

·s

-1

开关电流比为5×10

阈值电压为45.5 V。原子力显微镜测试结果表明:共混物成膜时发生明显的垂直相分离

在界面处形成连续的半导体层

有利于载流子传输。

Abstract

A blending crystalline system containing poly(3-hexylthiophene) and polycaprolactone was investigated. The electric measurements reveal that the field-effect performances of blend films

such as mobility

on/off current ratio and threshold voltage

decrease slowly with P3HT content reducing. However

the devices still have relatively good performance even P3HT content was 40%. According to the AFM studies

vertical phase separation occurs in the blend films

and a connective semiconducting layer can be observed in the interface between insulating layer and active layer

which is beneficial to transport of charge carriers.

关键词

Keywords

references

Sanderson K. Display of flexibility [J]. Nature, 2007, 445(7127):473-473.

Noh Y Y, Zhao N, Caironi M, et al. Downscaling of self-aligned, all-printed polymer thin-film transistors [J]. Nat. Nanotechnol., 2007, 2(12):784-789.

Arias A C, MacKenzie J D, McCulloch I, et al. Materials and applications for large area electronics: Solution-based approaches [J]. Chemical Reviews, 2010, 110(1):3-24.

Zhang H, Zhang L, Li J, et al. Improvment of ZnO-TFT performance by annealing ZnO film [J]. Chin. J. Lumin.(发光学报), 2011, 32(12):1281-1285 (in Chinese).

Wang W, Ma D G, Gao Q, et al. Memory and photo-responses characteristics of organic thin film transistors based on multi-layer gate dielectric [J]. Chin. J. Lumin.(发光学报), 2011, 32(7):729-735 (in Chinese).

Sirringhaus H. Device physics of solution-processed organic field-effect transistors [J]. Advanced Materials, 2005, 17 (20):2411-2425.

Choi M C, Kim Y, Ha C S. Polymers for flexible displays: From material selection to device applications [J]. Progress in Polymer Science, 2008, 33(6):581-630.

Goffri S, Muller C, Stingelin-Stutzmann N, et al. Multicomponent semiconducting polymer systems with low crystallization-induced percolation threshold [J]. Nature Materials, 2006, 5(12):950-956.

Zhao K, Ding Z C, Xue L J, et al. Crystallization-induced phase segregation based on double-crystalline blends of poly(3-hexylthiophene) and poly(ethylene glycol)s [J]. Macromolecular Rapid Communications, 2010, 31(6):532-538.

Babel A, Jenekhe S A. Morphology and field-effect mobility of charge carriers in binary blends of poly(3-hexylthiophene) with poly and polystyrene [J]. Macromolecules, 2004, 37(26):9835-9840.

Walheim S, Boltau M, Mlynek J, et al. Structure formation via polymer demixing in spin-cast films [J]. Macromolecules, 1997, 30(17):4995-5003.

Views

110

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Polymer Bistable Devices Based on Poly(3-hexylthiophene)/Poly(methylmethacrylate) Bilayer Films

Study of Ga-doping Effect on The Structure of Cubic MgZnO

Improving of The Performance of Organic Thin Film Transistor by Using Bphen Buffer Layer

Luminescent Spectra Design and Application Research on Continuous Xenon Lamp

Configuration and Evolution of 3N1Ti1Si Island on TiN(001) Surface：Ab Initio Study

Related Author

TENG Feng

HU Yu-feng

CAO Ya-peng

PENG Bo

SHEN De-zhen

XIE Xiu-hua

CHEN Hong-yu

ZHANG Zhen-zhong

Related Institution

Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China

State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences

University of Chinese Academy of Sciences

State Key Laboratory on Integrated Optoelectronics, Jilin University Region, College of Electronic Science and Engineering, Jilin University

School of Energy Research, Xiang'an Campus, Xiamen University

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰