Luminescence of Red Bi4Ge3O12 Crystal in Low Temperature

YU Ping-sheng; SU Liang-bi; WANG Qing-guo; XU Jun

doi:10.3788/fgxb20123308.0828

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Luminescence of Red Bi₄Ge₃O₁₂ Crystal in Low Temperature

更新时间：2020-08-12

- Luminescence of Red Bi₄Ge₃O₁₂ Crystal in Low Temperature
- Chinese Journal of Luminescence Vol. 33, Issue 8, Pages: 828-832(2012)
- 作者机构：
  
  1. 盐城工学院材料工程学院,江苏盐城,224051
  2. 中国科学院上海硅酸盐研究所透明与光功能无机材料重点实验室, 上海 201800
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20123308.0828
  CLC： O482.31
- Received：07 June 2012，
  
  Revised：26 June 2012，
  
  Published：10 August 2012
- 稿件说明：
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俞平胜, 苏良碧, 王庆国, 徐军. 红色Bi4 Ge3 O12晶体在低温下的发光性能[J]. 发光学报, 2012,33(8): 828-832

YU Ping-sheng, SU Liang-bi, WANG Qing-guo, XU Jun. Luminescence of Red Bi4Ge3O12 Crystal in Low Temperature[J]. Chinese Journal of Luminescence, 2012,33(8): 828-832
俞平胜, 苏良碧, 王庆国, 徐军. 红色Bi4 Ge3 O12晶体在低温下的发光性能[J]. 发光学报, 2012,33(8): 828-832 DOI： 10.3788/fgxb20123308.0828.

YU Ping-sheng, SU Liang-bi, WANG Qing-guo, XU Jun. Luminescence of Red Bi4Ge3O12 Crystal in Low Temperature[J]. Chinese Journal of Luminescence, 2012,33(8): 828-832 DOI： 10.3788/fgxb20123308.0828.

摘要

用下降法制备了Bi

晶体

发现生长出来的圆柱状晶体外侧呈现淡红色。对红色Bi

晶体进行了低温(至8 K)下的近红外发射光谱及衰减寿命等测试分析。发现低温时(200 K以下)红色Bi

在1 150 nm等波长处有较强的发射峰

强度随温度降低而增强

衰减时间为几百μs。

Abstract

Red Bi

(BGO) single crystals had been grown by vertical Bridgman (VB) method. The luminescence and decay time in the near infrared (NIR) region were measured at temperature of 8 K. A broad emission band was found at around 1 150 nm at

200 K

and the luminescence lifetime was measured to be several hundred microseconds. The decreased temperature led to increased luminescence intensity.

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Keywords

references

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