Effect of Annealing Temperature on Photoluminescence Performance and Structure of Si-rich Silicon Nitride

XIE Zheng-fang; SHAN Wen-guang; WU Xiao-shan; ZHANG Feng-ming

doi:10.3788/fgxb20123307.0780

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Effect of Annealing Temperature on Photoluminescence Performance and Structure of Si-rich Silicon Nitride

更新时间：2020-08-12

- Effect of Annealing Temperature on Photoluminescence Performance and Structure of Si-rich Silicon Nitride
- Chinese Journal of Luminescence Vol. 33, Issue 7, Pages: 780-784(2012)
- 作者机构：
  
  南京大学光伏工程中心, 南京大学物理学院,江苏南京,210093
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20123307.0780
  CLC： TN15;O484.4
- Received：09 April 2012，
  
  Revised：11 May 2012，
  
  Published Online：10 July 2012，
  
  Published：10 July 2012
- 稿件说明：
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谢正芳, 单文光, 吴小山, 张凤鸣. 退火温度对富硅氮化硅薄膜发光特性和结构的影响[J]. 发光学报, 2012,33(7): 780-784

XIE Zheng-fang, SHAN Wen-guang, WU Xiao-shan, ZHANG Feng-ming. Effect of Annealing Temperature on Photoluminescence Performance and Structure of Si-rich Silicon Nitride[J]. Chinese Journal of Luminescence, 2012,33(7): 780-784
谢正芳, 单文光, 吴小山, 张凤鸣. 退火温度对富硅氮化硅薄膜发光特性和结构的影响[J]. 发光学报, 2012,33(7): 780-784 DOI： 10.3788/fgxb20123307.0780.

XIE Zheng-fang, SHAN Wen-guang, WU Xiao-shan, ZHANG Feng-ming. Effect of Annealing Temperature on Photoluminescence Performance and Structure of Si-rich Silicon Nitride[J]. Chinese Journal of Luminescence, 2012,33(7): 780-784 DOI： 10.3788/fgxb20123307.0780.

摘要

采用直流等离子体增强化学气相沉积(PECVD)法在(100)单晶硅片表面生长富硅氮化硅薄膜

研究了不同的退火温度对氮化硅薄膜发光性质和结构的影响。研究发现

随着退火温度的升高

氮化硅薄膜的发光强度逐渐减弱

发光是由缺陷能级引起的

在900 ℃时荧光基本消失。XPS测试表明

在N

氛围900 ℃下退火

氮化硅薄膜中未有硅相析出

故未表现出硅量子点的发光。FTIR测试也为PL结论提供了一定的证据。

Abstract

Silicon-rich silicon nitride film was deposited by plasma enhanced chemical vapor deposition (PECVD) on (100)-oriented monocrystalline silicon

according to silicon solar cell process. Photoluminescence (PL) performance of the films at annealing temperatures in N

ambient was studied

showing that temperatures had great effect on the characteristics. Excited by 325 nm line

PL from defect-related states was only observed in the film and Si clusters has not been formed at annealing temperature 900 ℃. After annealed at different temperature

PL intensity decreased with increasing temperature. PL peak originated from defect energy Si dangling bond (K center). In this work

At 900 ℃

disappearance of PL peak was attributed to increasing non-radiation recombination and silicon clusters has not been formed. Structure of silicon nitride has been measured by X-ray photo-electron spectroscopy (XPS) showing binding energy at 101.8 eV and indicated that silicon phase has not been separated from silicon nitride. Infrared (FTIR) measurement provided a good confirm to PL analysis.

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references

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