Study of AlN Films Doped by Si Thermal Diffusion

WANG Xin-jian; SONG Hang; LI Da-bing; JIANG Hong; LI Zhi-ming; MIAO Guo-qing; CHEN Yi-ren

doi:10.3788/fgxb20123307.0768

您当前的位置：

首页 >

文章列表页 >

Study of AlN Films Doped by Si Thermal Diffusion

更新时间：2020-08-12

- Study of AlN Films Doped by Si Thermal Diffusion
- Chinese Journal of Luminescence Vol. 33, Issue 7, Pages: 768-773(2012)
- 作者机构：
  
  1. 中国科学院研究生院北京,100039
  2. 发光学与应用国家重点实验室中国科学院长春光学精密机械与物理研究所,吉林长春,130033
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20123307.0768
  CLC： O484.1
- Received：28 March 2012，
  
  Revised：07 May 2012，
  
  Published Online：10 July 2012，
  
  Published：10 July 2012
- 稿件说明：
移动端阅览
王新建, 宋航, 黎大兵, 蒋红, 李志明, 缪国庆, 陈一仁, 孙晓娟. 氮化铝薄膜的硅热扩散掺杂研究[J]. 发光学报, 2012,33(7): 768-773

WANG Xin-jian, SONG Hang, LI Da-bing, JIANG Hong, LI Zhi-ming, MIAO Guo-qing, CHEN Yi-ren, SUN Xiao-jun. Study of AlN Films Doped by Si Thermal Diffusion[J]. Chinese Journal of Luminescence, 2012,33(7): 768-773
王新建, 宋航, 黎大兵, 蒋红, 李志明, 缪国庆, 陈一仁, 孙晓娟. 氮化铝薄膜的硅热扩散掺杂研究[J]. 发光学报, 2012,33(7): 768-773 DOI： 10.3788/fgxb20123307.0768.

WANG Xin-jian, SONG Hang, LI Da-bing, JIANG Hong, LI Zhi-ming, MIAO Guo-qing, CHEN Yi-ren, SUN Xiao-jun. Study of AlN Films Doped by Si Thermal Diffusion[J]. Chinese Journal of Luminescence, 2012,33(7): 768-773 DOI： 10.3788/fgxb20123307.0768.

摘要

采用热扩散方法

对AlN薄膜进行了Si掺杂。利用电子能量散射谱(EDS)以及高温变温电导对薄膜进行了分析。EDS测试结果表明:在1 250 ℃的温度下

氮化硅(SiN

)作为Si的扩散源

可以实现对AlN薄膜的Si热扩散掺杂。高温电流-电压(I-V)测试表明:在460 ℃测试温度下

AlN薄膜在热扩散掺杂以后

其电导从1.9×10

-3

S·m

-1

增加到2.1×10

-2

S·m

-1

。高温变温电导测试表明:氮空位(V

)和Si在AlN中的激活能为1.03 eV和0.45 eV。

Abstract

This paper deals with the characteristics of aluminium nitride (AlN) films doped by silicon (Si) thermal diffusion. The films are analyzed by energy dispersive X-ray spectroscopy (EDS) and high-temperature dependent electrical conductivity. The results of EDS show that the Si element is successfully doped into the AlN films using SiN

as the diffusion source at the temperature of 1 250 ℃. The high-temperature current-voltage (I-V) measurements show that the electrical properties of the AlN films can be prominently improved by Si thermal diffusion

and at the measured temperature of 460 ℃ their electrical conductivities increase from 1.9×10

-3

S·m

-1

to 2.1×10

-2

S·m

-1

after the Si thermal diffusion. The high-temperature dependence of thermal conductivity suggests that the activation energies of V

and Si are about 1.03 eV and 0.45 eV

respectively.

关键词

Keywords

references

Strite S, Morkoc H. GaN, AlN, and InN: A review [J]. J. Vac. Sci. Technol. B, 1992, 10(4):1237-1241.

Ambacher O. Growth and applications of group Ⅲ-nitrides [J]. J. Phys. D, 1998, 31(20):2653-2710.

Stampfl C, Van de walle C G. Theoretical investigation of native defects, impurities, and complexes in aluminum nitride [J]. Phys. Rev. B, 2002, 65(15):155212-1-7.

Boguslawski P, Bernholc J. Doping properties of C, Si, and Ge impurities in GaN and AlN [J]. Phys. Rev. B, 1997, 56(15):9496-9505.

Pantha B N, Sedhain A, Li J, et al. Probing the relationship between structural and optical properties of Si-doped AlN [J]. Appl. Phys. Lett., 2010, 96(13):131906-1-3.

Kanechika M, Kachi T. N-type AlN layer by Si ion implantation [J]. Appl. Phys. Lett., 2006, 88(20):202106-1-3.

Wu J Q. When group-Ⅲ nitrides go infrared: New properties and perspectives [J]. J. Appl. Phys., 2009, 106(1): 011101-1-5.

Ogata H, Kanayama K, Ohtani M, et al. Diffusion of aluminum into silicon nitride films [J]. Thin Solid Films, 1978, 48(3):333-338.

Nakarmi M L, Nepal N, Ugolini C, et al. Correlation between optical and electricalproperties of Mg- doped AlN epilayers [J]. Appl. Phys. Lett., 2006, 89(15):152120.

Taniyasu Y, Kasu M, Makimoto T. Increased electron mobility in n-type Si-doped AlN by reducing dislocation density [J]. Appl. Phys. Lett., 2006, 89(18):182112-1-3.

Chin V W L, Tansley T L, Osotchan T. Electron mobilities in gallium, indium, and aluminum nitrides [J]. J. Appl. Phys., 1994, 75(11):7365-7372.

Albrecht J D, Wang R P, Ruden P P, et al. Monte Carlo calculation of electron transport properties of bulk AlN [J]. J. Appl. Phys., 1998, 83(3):1446-1449.

Mattila T, Nieminen R M. Ab initio study of oxygen point defects in GaAs, GaN, and AlN [J]. Phys. Rev. B, 1996, 54(23):16676-16682.

van de Walle C G, Neugebauer J. First-principles calculations for defects and impurities: Applications to Ⅲ-nitrides [J]. J. Appl. Phys., 2004, 95(8):3851-3879.

Hermann M, Furtmayr F, Bergmaier A. Highly Si-doped AlN grown by plasma-assisted molecular-beam epitaxy [J]. Appl. Phys. Lett., 2005, 86(19):192108-1-3.

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Hot Isostatic Pressing Post-treatment and Performance of Red-emitting AlN-CaAlSiN₃∶Eu Composite Phosphor Ceramics

Effects of Alkali Metal Ions on Upconversion of Rare Earth Doped Fluorides

Related Author

Xue-jian LIU

Rong-jun XIE

Zheng-ren HUANG

Xiu-min YAO

Zi-qiu CHENG

Ao-chen DU

Shu-xing LI

Xing-lin PENG

Related Institution

Shanghai Institute of Ceramics, Chinese Academy of Sciences

College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences

College of Materials, Xiamen University

Shaanxi Energy Institute

National Institute of Metrology,,, China

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰