Structural and Optical Properties of Bi3.15Eu0.85Ti3O12 Ferroelectric Thin Films

RUAN Kai-bin; WU Guang-heng; ZHOU Hong; LIU Yin-chun

doi:10.3788/fgxb20123307.0754

您当前的位置：

首页 >

文章列表页 >

Structural and Optical Properties of Bi_3.15Eu_0.85Ti₃O₁₂ Ferroelectric Thin Films

更新时间：2020-08-12

- Structural and Optical Properties of Bi_3.15Eu_0.85Ti₃O₁₂ Ferroelectric Thin Films
- Chinese Journal of Luminescence Vol. 33, Issue 7, Pages: 754-759(2012)
- 作者机构：
  
  1. 福建农林大学机电工程学院,福建福州,350002
  2. 中山大学物理科学与工程技术学院光电材料与技术国家重点实验室,广东广州,510275
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20123307.0754
  CLC： O443
- Received：17 April 2012，
  
  Revised：07 May 2012，
  
  Published Online：10 July 2012，
  
  Published：10 July 2012
- 稿件说明：
移动端阅览
阮凯斌, 伍广亨, 周洪, 刘银春. Bi3.15Eu0.85Ti3O12铁电薄膜的结构与光学性能[J]. 发光学报, 2012,33(7): 754-759

RUAN Kai-bin, WU Guang-heng, ZHOU Hong, LIU Yin-chun. Structural and Optical Properties of Bi3.15Eu0.85Ti3O12 Ferroelectric Thin Films[J]. Chinese Journal of Luminescence, 2012,33(7): 754-759
阮凯斌, 伍广亨, 周洪, 刘银春. Bi3.15Eu0.85Ti3O12铁电薄膜的结构与光学性能[J]. 发光学报, 2012,33(7): 754-759 DOI： 10.3788/fgxb20123307.0754.

RUAN Kai-bin, WU Guang-heng, ZHOU Hong, LIU Yin-chun. Structural and Optical Properties of Bi3.15Eu0.85Ti3O12 Ferroelectric Thin Films[J]. Chinese Journal of Luminescence, 2012,33(7): 754-759 DOI： 10.3788/fgxb20123307.0754.

摘要

采用化学溶液沉积法在石英衬底上制备了Bi

3.15

0.85

(BEuT) 铁电薄膜

研究了 BEuT薄膜的结构和光学性能。XRD结果表明

不同温度退火的BEuT皆形成铋层状钙钛矿型结构

其晶粒尺寸随着退火温度的升高而增大

与SEM观察结果一致。对BEuT薄膜的拉曼光谱研究表明

主要取代钙钛矿层中的Bi

位。光学透过率曲线显示

在大于500 nm的波段

各BEuT薄膜的透过率均比较高

其禁带宽度约为 3.69 eV。BEuT薄膜的发光随着退火温度的升高而增强

这可归因于其结晶状况的改善。

Abstract

3.15

0.85

(BEuT) thin films were prepared on fused silica substrates by using chemical solution deposition technique. The structural and optical properties of thin films were stu-died in this work. XRD results show that BEuT thin films exhibit a polycrystalline bismuth-layered perovskite structure

and the average grain sizes increase with the annealing temperatures

which is consistent with the SEM results. Raman spectra of BEuT samples indicate that Eu

mainly replace Bi

in perovskete layer. In the wavelength of above 500 nm

BEuT thin films exhibit high optical transmittance

and the band gaps of all samples are nearly about 3.69 eV. The emission intensities of BEuT thin films increase with the annealing temperatures

which could be due to the improvement of crystallization for the samples annealed at higher temperature.

关键词

Keywords

references

Lee H, Hesse N D, Zakharov N, et al. Ferroelectric Bi3.25La0.75Ti3O12 films of uniform a-axis orientation on silicon substrates [J]. Science, 2002, 296(5575):2006-2009.

Bao D H, Lee S K, Zhu X H, et al. Growth, structure, and properties of all-epitaxial ferroelectric (Bi,La)4Ti3O12/Pb(Zr0.4Ti0.6)O3/(Bi,La)4Ti3O12 trilayered thin films on SrRuO3-covered SrTiO3(011) substrates [J]. Appl. Phys. Lett., 2005, 86(8):082906-1-3.

Hu G D, Fan S H, Cheng X. Anisotropy of ferroelectric and piezoelectric properties of Bi3.15Pr0.85Ti3O12 thin films on Pt(100)/Ti/SiO2/Si substrates [J]. J. Appl. Phys., 2007, 101(5):054111-1-6.

Ruan K B, Chen X M, Liang T, et al. Photoluminescence and electrical properties of highly transparent (Bi,Eu)4Ti3O12 ferroelectric thin films on indium-tin-oxide-coated glass substrates [J]. J. Appl. Phys., 2008, 103(7):074101-1-4.

Ruan K B, Chen X M, Liang T, et al. Improved photoluminescence and electrical properties of Eu- and Gd-codoped bismuth titanate ferroelectric thin films [J]. J. Appl. Phys., 2008, 103(8):086104-1-3.

Ruan K B, Gao A M, Deng W L, et al. Orientation dependent photoluminescent properties of chemical solution derived Bi4-xEuxTi3O12 ferroelectric thin films [J]. J. Appl. Phys., 2008, 104(3):036101-1-3.

Zhou H, Wu G H, Chen X M, et al. Preparation and photoluminescence of praseodymium-doped bismuth titanate ferroelectric thin films [J]. Ferroelectrics, 2010, 406(1):108-113.

Zhou H, Chen X M, Wu G H, et al. Significantly enhanced red photoluminescence properties of nanoomposite films composed of a ferroelectric Bi3.6Eu0.4Ti3O12 matrix and highly c-axis-oriented ZnO nanorods on Si substrates prepared by a hybrid chemical solution method [J]. J. Am. Chem. Soc., 2010, 132(6):1790-1791.

Gao F, Zhang Q Y, Ding G J, et al. Strong upconversion photoluminescence and large ferroelectric polarization in Er3+-Yb3+-W6+ triply substituted bismuth titanate thin films prepared by chemical solution deposition [J]. J. Am. Ceram. Soc., 2011, 94(11):3867-3870.

Graves P R, Hua G, Myhra S, et al. The Raman modes of the Aurivillius phases: temperature and polarization depen-dence [J]. J. Solid State Chem., 1995, 114(1):112-122.

Idink H, Srikanth V, White W B, et al. Raman study of low temperature phase transitions in bismuth titanate, Bi4Ti3O12 [J]. J. Appl. Phys., 1994, 76(3):1819-1823.

Wang Y H, Xu G D, Zhang X J, et al. Structural and optical properties of Bi4-xNdxTi3O12 thin films prepared by metal-organic solution deposition [J]. Mater. Lett., 2004, 58(5):813-816.

Yau C Y, Palan R, Tran K, et al. Mechanism of polarization enhancement in La-doped Bi4Ti3O12 films [J]. Appl. Phys. Lett., 2005, 86(3):32907-1-3.

Hu X B, Garg A, Barber Z H. Structural and electrical properties of samarium-substituted bismuth titanate [J]. Thin Solid Films, 2005, 484(1-2):188-195.

Wang X S, Zhai J W, Zhang L Y, et al. Structural and optical characterization of Bi4Ti3O12 thin films prepared by metallorganic solution deposition technique [J]. Infrared Phys. Technol., 1999, 40(1):55-60.

Wang G S, Meng X J, Lai Z Q, et al. Structural and optical properties of Bi3.25La0.75Ti3O12 ferroelectric thin films prepared by chemical solution methods [J]. Appl. Phys. A, 2003, 76(1):83-86.

Ma J H, Meng X J, Sun J L, et al. Ferroelectric and optical properties of Bi3.25Nd0.75Ti3O12 thin films prepared by a chemical solution method [J]. J. Phys. D: Appl. Phys., 2004, 37(22):3160-3164.

Lei B F, Sha L, Liu Y L, et al. Synthesis of nano-sized Sr2SiO4∶Eu3+ phosphor by combustion method and its luminescence properties [J]. Chin. J. Lumin. ( 发光学报), 2011, 32(6):535-541 (in Chinese).

Xiao Q L, Liu G X, Zou S Y, et al. Synthesis and luminescent properties of Na2Ca4(PO4)2SiO4∶Eu3+,Bi3+ red-emitting phosphor [J]. Chin. J. Lumin. ( 发光学报), 2011, 32(4):332-336 (in Chinese).

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Fabrication and Near-infrared Spectral Modulation of Au/Bi Ions Co-doped Silica Thin Films

Luminescence Properties of Eu³⁺， Dy³⁺， Na⁺ Doped Sr₃AlO₄F

Research Progress in Photoluminescent Aerogels

Preparation and Characterization of Zn²⁺-doped MgGa₂O₄∶Ni²⁺ NIR-Ⅱ Phosphors and Their Application in Imaging

Localization Features of Carrier Emission Recombination in Deep-ultraviolet AlGaN-based Multiple Quantum Well Structure

Related Author

CHEN Ruo-wang

WANG Peng-jun

ZHANG Xiao-wei

ZHANG Yue-jun

ZHANG Hui-hong

SHU Jun-peng

LIANG Ruihan

ZHAO Huiming

Related Institution

Faculty of Electrical Engineering and Computer Science, Ningbo University

Research Institute of Changchun University of Science and Technology in Chongqing

School of Materials Science and Engineering， Changchun University of Science and Technology

School of Flexible Electronics（Future Technologies） & Institute of Advanced Materials（IAM）， Nanjing Tech University

School of Physics， Northeast Normal University

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰