Effects of Post-annealing in Ar Atmosphere on The Electrical Properties of HAZO Films

SHI Su-jun; ZHU De-liang; LV You-ming; CAO Pei-jiang; LIU Wen-jun; JIA Fang; MA Xiao-cui

doi:10.3788/fgxb20123307.0742

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Effects of Post-annealing in Ar Atmosphere on The Electrical Properties of HAZO Films

更新时间：2020-08-12

- Effects of Post-annealing in Ar Atmosphere on The Electrical Properties of HAZO Films
- Chinese Journal of Luminescence Vol. 33, Issue 7, Pages: 742-746(2012)
- 作者机构：
  
  深圳大学材料学院深圳市特种功能材料重点实验室,广东深圳,518060
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20123307.0742
  CLC： O472.4;O484.4
- Received：28 February 2012，
  
  Revised：17 May 2012，
  
  Published Online：10 July 2012，
  
  Published：10 July 2012
- 稿件说明：
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石素君, 朱德亮, 吕有明, 曹培江, 柳文军, 贾芳, 马晓翠. 氩气退火对氢掺杂AZO薄膜电学性能的影响[J]. 发光学报, 2012,33(7): 742-746

SHI Su-jun, ZHU De-liang, LV You-ming, CAO Pei-jiang, LIU Wen-jun, JIA Fang, MA Xiao-cui. Effects of Post-annealing in Ar Atmosphere on The Electrical Properties of HAZO Films[J]. Chinese Journal of Luminescence, 2012,33(7): 742-746
石素君, 朱德亮, 吕有明, 曹培江, 柳文军, 贾芳, 马晓翠. 氩气退火对氢掺杂AZO薄膜电学性能的影响[J]. 发光学报, 2012,33(7): 742-746 DOI： 10.3788/fgxb20123307.0742.

SHI Su-jun, ZHU De-liang, LV You-ming, CAO Pei-jiang, LIU Wen-jun, JIA Fang, MA Xiao-cui. Effects of Post-annealing in Ar Atmosphere on The Electrical Properties of HAZO Films[J]. Chinese Journal of Luminescence, 2012,33(7): 742-746 DOI： 10.3788/fgxb20123307.0742.

摘要

采用射频磁控溅射法

在石英玻璃衬底上制备出了性能良好的H掺杂AZO透明导电薄膜

通过XRD、Hall、UV-Vis等测试手段

研究了氩气气氛中退火温度对薄膜电学热稳定性的影响。实验结果显示

随着退火温度的升高

薄膜中载流子的浓度和迁移率下降。分析认为

这与薄膜中氢的逸出密切相关。

Abstract

HAZO films were prepared on quartz substrates by RF magnetron sputtering in Ar+H

gas ambient at room temperature. The effects of post-annealing in pure Ar atmosphere on the structural

optical and electrical properties of the HAZO films were investigated. It was found that post-annealing treatment was beneficial to crystallization of HAZO thin films

while caused a large degradation of the conductivity. The increase in the resistivity of HAZO thin films was attributed to the doped hydrogen atoms diffuse out after annealing. It was showed that interstitial hydrogen atoms (H

) and substitutional hydrogen atoms (H

) at an O site removed from films

as well as the effect of H passivating deep acceptors and dangling bonds gradually eliminated as the heating temperature was increased.

关键词

Keywords

references

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Related Institution

School of Physics， Nankai University

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