Comparison The Effect of t-BuOH and H2O as O Precursors on ZnO Films Grown by MOCVD Method

ZHU Shun-ming; HUANG Shi-min; GU Shu-lin; ZHU Zhen-bang; GU Ran; ZHENG You-dou

doi:10.3788/fgxb20123306.0665

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Comparison The Effect of t-BuOH and H₂O as O Precursors on ZnO Films Grown by MOCVD Method

Device Fabrication & Physics | 更新时间：2020-08-12

- Comparison The Effect of t-BuOH and H₂O as O Precursors on ZnO Films Grown by MOCVD Method
- Chinese Journal of Luminescence Vol. 33, Issue 6, Pages: 665-668(2012)
- 作者机构：
  
  南京大学电子科学与工程学院南京微结构国家实验室,江苏南京,210093
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20123306.0665
  CLC： TN304
- Received：06 January 2012，
  
  Revised：2012-5-2，
  
  Published Online：10 June 2012，
  
  Published：10 June 2012
- 稿件说明：
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朱顺明, 黄时敏, 顾书林, 朱振邦, 顾然, 郑有炓. MOCVD法生长ZnO薄膜时氧源 t-BuOH和H2O的比较研究[J]. 发光学报, 2012,(6): 665-668

ZHU Shun-ming, HUANG Shi-min, GU Shu-lin, ZHU Zhen-bang, GU Ran, ZHENG You-dou. Comparison The Effect of t-BuOH and H2O as O Precursors on ZnO Films Grown by MOCVD Method[J]. Chinese Journal of Luminescence, 2012,(6): 665-668
朱顺明, 黄时敏, 顾书林, 朱振邦, 顾然, 郑有炓. MOCVD法生长ZnO薄膜时氧源 t-BuOH和H2O的比较研究[J]. 发光学报, 2012,(6): 665-668 DOI： 10.3788/fgxb20123306.0665.

ZHU Shun-ming, HUANG Shi-min, GU Shu-lin, ZHU Zhen-bang, GU Ran, ZHENG You-dou. Comparison The Effect of t-BuOH and H2O as O Precursors on ZnO Films Grown by MOCVD Method[J]. Chinese Journal of Luminescence, 2012,(6): 665-668 DOI： 10.3788/fgxb20123306.0665.

摘要

以活性较低的叔丁醇(

-BuOH)和水(H

O)作为氧源

采用MOCVD技术生长了ZnO薄膜。研究发现

-BuOH作为氧源可以有效地抑制其与锌源之间的气相预反应

比H

O作为氧源进行ZnO薄膜的外延生长具有更高的生长速率

得到的ZnO薄膜晶体质量更优

同时载流子的迁移率可以达到37.0 cm

·V

-1

·s

-1

表明

-BuOH更适合作为氧源通过MOCVD系统生长ZnO薄膜。

Abstract

The behaviors of ZnO films using

-BuOH and H

O as oxygen precursors were investigated. Despite the fact that both

-BuOH and H

O are of lower activity

the ZnO epilayer has a higher growth rate when

-BuOH is used as oxygen precursor

due to its more effective prevention of the gas phase pre-reaction. Compared with H

ZnO epilayer get a better crystal quality by using

-BuOH as oxygen precursor. And the Hall mobility up to 37.0 cm

稸

-1

穝

-1

is achieved in the flim where

-BuOH is used as oxygen precursor. The research shows that

-BuOH is more suitable for oxygen precursor of the MOCVD growth of ZnO epilayer.

关键词

Keywords

references

Su Shichen, Lv Youming. Ultraviolet electroluminescence of ZnMgO/n-ZnO/ZnMgO/p-GaN heterojunction light emitting diode [J]. Chin. J. Lumin.(发光学报), 2011, 32(8):821-824 (in Chinese).

Xu Lu, Liang Hongwei, Liu Yuanda, et al. Cu-doped ZnO thin film prepared by metallorganic chemical vapor deposition [J]. Chin. J. Lumin.(发光学报), 2011, 32(9):956-961 (in Chinese).

Krost A, Christen J, Oleynik N, et al. Ostwald ripening and flattening of epitaxial ZnO layers during in situ annealing in metalorganic vapor phase epitaxy [J]. Appl. Phys. Lett., 2004, 85(9):1496-1498.

Dai Jiangnan, Su Hongbo, Wang Li, et al. Properties of ZnO films grown on (0001) sapphire substrate using H2O and N2O as O precursors by atmospheric pressure MOCVD [J]. J. Cryst. Growth, 2006, 290(2):426-430.

Waag A, Gruber Th, Thonke K, et al. ZnO metal-organic vapor phase epitaxy:Present state and prospective applications [J]. J. Alloys Compd., 2004, 371(1-2):77-81.

Hahn B, Heindel G, Pschorr-Schoberer E, et al. MOCVD layer growth of ZnO using DMZn and tertiary butanol [J]. Semicond. Sci. Technol., 1998, 13(7):788-791.

Lei T, Ludwig K F, Moustakas T D. Heteroepitaxy, polymorphism, and faulting in GaN thin films on silicon and sapphire substrates [J]. J. Appl. Phys., 1993, 74(7):4430-4337.

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Related Institution

State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University

State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University

School of Materials Science and Engineering， Changchun University of Science and Technology

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Key Laboratory of Beam Technology of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University

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