Numerical Simulation for Crystalline Silicon Solar Cells

ZHANG Yin-bo; PAN Miao; CHENG Xiang; CHEN Chao

doi:10.3788/fgxb20123306.0660

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Numerical Simulation for Crystalline Silicon Solar Cells

paper | 更新时间：2020-08-12

- Numerical Simulation for Crystalline Silicon Solar Cells
- Chinese Journal of Luminescence Vol. 33, Issue 6, Pages: 660-664(2012)
- 作者机构：
  
  1. 厦门大学物理与机电工程学院,福建厦门,361005
  2. 厦门大学能源研究院,福建厦门,361005
  3. 福建省半导体照明工程技术研究中心,福建厦门,361005
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20123306.0660
  CLC： TM914.4+1
- Received：12 March 2012，
  
  Revised：2012-4-27，
  
  Published Online：10 June 2012，
  
  Published：10 June 2012
- 稿件说明：
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张寅博, 潘淼, 程翔, 陈朝. 晶体硅太阳电池数值模拟软件及其应用[J]. 发光学报, 2012,(6): 660-664

ZHANG Yin-Bo, PAN Miao, CHENG Xiang, CHEN Chao. Numerical Simulation for Crystalline Silicon Solar Cells[J]. Chinese Journal of Luminescence, 2012,(6): 660-664
张寅博, 潘淼, 程翔, 陈朝. 晶体硅太阳电池数值模拟软件及其应用[J]. 发光学报, 2012,(6): 660-664 DOI： 10.3788/fgxb20123306.0660.

ZHANG Yin-Bo, PAN Miao, CHENG Xiang, CHEN Chao. Numerical Simulation for Crystalline Silicon Solar Cells[J]. Chinese Journal of Luminescence, 2012,(6): 660-664 DOI： 10.3788/fgxb20123306.0660.

摘要

提出一种在Matlab/GUI环境下设计的晶体硅太阳电池数值模拟软件

通过光生少数载流子连续性方程建立了单晶硅N

/P/P

结构太阳电池的物理模型。通过引进有效迁移率和有效少子扩散长度概念

并考虑多晶硅中晶界复合后

实现了对单晶硅、柱状多晶硅太阳电池的开路电压、短路电流、填充因子、转化效率、串并联电阻等电池性能的参数指标的数值模拟。程序模拟结果通过数值和图形两种方式输出

模拟结果与实验结果接近

能够为晶体硅太阳电池的设计与制备起到较好的指导作用。本程序对于以N型材料为衬底的晶体硅太阳电池同样适用。

Abstract

A software for the numerical simulation of crystalline silicon solar cells is developed. Photocarrier continuity equation

effective mobility

effective minority carrier diffusion length and carrier recombination on crystal boundary of multicrystalline silicon are taken into account in the physical model. The software outputs the numerical simulation of crystalline silicon solar cells by numerical results and graphics. As the simulation results close to experimental data

the software can be a good guide for the design and production of crystalline silicon solar cells.

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Keywords

references

Singh S N, Sharma S K, Singh P K, et al. Model of front-illuminated n+-p-p+ high efficiency silicon solar cell [J]. IEEE Transactions on Electron Devices, 1992, 39(2):362-369.[2] Basore P A, Cluqston D A. PC1D version 4 for windows:From analysis to design //Proceeding of 25th IEEE Photovoltaic Specialists Conference, Washington, USA:IEEE, 1996:377-381.[3] Xiong Shaozhen, Zhu Meifang. Solar Cell Foundation and Application [M]. Beijing:Science Press, 2009:113-134.[4] Zhang Meiyu, Chen Chao. Numerical simulation and analysis for Si N+/P/P+ solar cells [J]. Acta Energiae Solaris Sinica (太阳能学报), 2008, 29(10):1267-1273 (in Chinese).[5] Wang Yangyuan. Polycrystalline Silicon Thin Film and Its Application in Integrated Circuit [M]. Beijing:Science Press, 2000:168-169.[6] Soclof S I, Iles P A. Grain boundary and impurity effects in low cost silicon solar cells //Proceeding of 11th IEEE Photovohaic Specialists Conference, New York, USA:IEEE, 1975:56-61.[7] Imaizumi M, Ito T, Yamaguchi M. Effect of grain size and dislocation density on the performance of thin film polycrystalline silicon solar cells [J]. J. Appl. Phys., 1997, 81(11):7635-7640.[8] Zhang Meiyu, Chen Chao. One-dimensional model calculation for polycrystalline silicon solar cells [J]. Semiconductor Optoelectronics (半导体光电), 2008, 29(5):631-635 (in Chinese).[9] Green M A. Third Generation Photovoltaics:Advanced Solar Energy Conversion [M]. Shanghai:Shanghai Jiao Tong University Press, 2010:95-98.[10] Li Yanhua, Pan Miao, Pang Aisuo, et al. The application of electroluminescence imaging to detection the hidden defects in silicon solar cells [J]. Chin. J. Lumin.(发光学报), 2011, 32(4):378-382 (in Chinese).

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