Temperature Stability of InGaAlAs, InGaAsP, InGaAs and GaAs Quantum-wells for 852 nm Laser Diode

XU Hua-wei; NING Yong-qiang; ZENG Yu-gang; ZHANG Xing; QIN Li; LIU Yun; WANG Li-jun

doi:10.3788/fgxb20123306.0640

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Temperature Stability of InGaAlAs, InGaAsP, InGaAs and GaAs Quantum-wells for 852 nm Laser Diode

paper | 更新时间：2020-08-12

- Temperature Stability of InGaAlAs, InGaAsP, InGaAs and GaAs Quantum-wells for 852 nm Laser Diode
- Chinese Journal of Luminescence Vol. 33, Issue 6, Pages: 640-646(2012)
- 作者机构：
  
  1. 发光学及应用国家重点实验室中国科学院长春光学精密机械与物理研究所,吉林长春,130033
  2. 中国科学院研究生院北京,100039
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20123306.0640
  CLC： TN248.4
- Received：07 March 2012，
  
  Revised：2012-4-26，
  
  Published Online：10 June 2012，
  
  Published：10 June 2012
- 稿件说明：
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徐华伟, 宁永强, 曾玉刚, 张星, 秦莉, 刘云, 王立军. 852 nm半导体激光器InGaAlAs、InGaAsP、 InGaAs和GaAs量子阱的温度稳定性[J]. 发光学报, 2012,(6): 640-646

XU Hua-Wei, NING Yong-Jiang, CENG Yu-Gang, ZHANG Xing, QIN Li, LIU Yun, WANG Li-Jun. Temperature Stability of InGaAlAs, InGaAsP, InGaAs and GaAs Quantum-wells for 852 nm Laser Diode[J]. Chinese Journal of Luminescence, 2012,(6): 640-646
徐华伟, 宁永强, 曾玉刚, 张星, 秦莉, 刘云, 王立军. 852 nm半导体激光器InGaAlAs、InGaAsP、 InGaAs和GaAs量子阱的温度稳定性[J]. 发光学报, 2012,(6): 640-646 DOI： 10.3788/fgxb20123306.0640.

XU Hua-Wei, NING Yong-Jiang, CENG Yu-Gang, ZHANG Xing, QIN Li, LIU Yun, WANG Li-Jun. Temperature Stability of InGaAlAs, InGaAsP, InGaAs and GaAs Quantum-wells for 852 nm Laser Diode[J]. Chinese Journal of Luminescence, 2012,(6): 640-646 DOI： 10.3788/fgxb20123306.0640.

摘要

为了提高852 nm半导体激光器的温度稳定性

理论计算了InGaAlAs、InGaAsP、InGaAs和GaAs量子阱的增益

模拟对比并研究了不同量子阱的增益峰值和峰值波长随温度的漂移。结果显示

采用In

0.15

0.74

-Al

0.11

As作为852 nm半导体激光器的量子阱可以使器件同时具有较高的增益峰值和良好的温度稳定性。使用金属有机化学气相沉积(MOCVD)外延生长了压应变In

0.15

0.74

0.11

As单量子阱852 nm半导体激光器

实验测得波长随温度漂移的数值为0.256 nm/K

实验测试结果验证了理论计算结果。

Abstract

In order to enhance the temperature stability of 852 nm laser diode

the gain of InGaAlAs

InGaAsP

InGaAs and GaAs quantum-wells were calculated by a comprehensive model theory

and the peak gain and wavelength versus operation temperature for the six different quantum-wells were compared and discussed. The results indicate that In

0.15

0.74

0.11

As quantum-well is the most appropriate candidate for 852 nm laser diode when the higher gain and better temperature stability demanded simultaneously. Compressive-strained In

0.15

0.74

0.11

As single quantum-well 852 nm laser diode was grown by metal-organic chemical vapor deposition (MOCVD). The wavelength shift with temperature for 852 nm laser diode is 0.256 nm/K

the experimental results are in good agreement with theoretical calculation results.

关键词

Keywords

references

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