Preparation and Optics Band Gap Characterization of Si-rich Silicon Nitride Thin Films

LIN Juan; YANG Pei-zhi; HUA Qi-lin

doi:10.3788/fgxb20123306.0596

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Preparation and Optics Band Gap Characterization of Si-rich Silicon Nitride Thin Films

paper | 更新时间：2020-08-12

- Preparation and Optics Band Gap Characterization of Si-rich Silicon Nitride Thin Films
- Chinese Journal of Luminescence Vol. 33, Issue 6, Pages: 596-600(2012)
- 作者机构：
  
  1. 可再生能源材料先进技术与制备教育部重点实验室,云南昆明,650092
  2. 云南师范大学太阳能研究所,云南昆明,650092
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20123306.0596
  CLC： TK51
- Received：18 February 2012，
  
  Revised：2012-4-27，
  
  Published Online：10 June 2012，
  
  Published：10 June 2012
- 稿件说明：
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林娟, 杨培志, 化麒麟. 富硅氮化硅薄膜的制备及其光学带隙研究[J]. 发光学报, 2012,(6): 596-600

LIN Juan, YANG Pei-Zhi, HUA Qi-Lin. Preparation and Optics Band Gap Characterization of Si-rich Silicon Nitride Thin Films[J]. Chinese Journal of Luminescence, 2012,(6): 596-600
林娟, 杨培志, 化麒麟. 富硅氮化硅薄膜的制备及其光学带隙研究[J]. 发光学报, 2012,(6): 596-600 DOI： 10.3788/fgxb20123306.0596.

LIN Juan, YANG Pei-Zhi, HUA Qi-Lin. Preparation and Optics Band Gap Characterization of Si-rich Silicon Nitride Thin Films[J]. Chinese Journal of Luminescence, 2012,(6): 596-600 DOI： 10.3788/fgxb20123306.0596.

摘要

采用双极脉冲磁控反应溅射法在不同参数条件下制备了一系列氮化硅薄膜。利用数字式显微镜和紫外-可见光光谱仪研究了沉积薄膜的表面形貌及其光学带隙

利用共焦显微拉曼光谱仪比较了硅衬底、氮化硅薄膜退火前后的拉曼光谱。结果表明

氮气流量对薄膜的光学带隙影响较大

制备的薄膜主要为富硅氮化硅薄膜。原沉积薄膜的拉曼光谱存在明显的非晶硅和单晶硅峰

退火处理后非晶硅峰减弱或消失

表明薄膜出现明显的结晶化;单晶硅峰出现频移现象

表明薄膜中出现硅纳米颗粒

平均尺寸约为6.6 nm。

Abstract

Silicon nitride (SiN

) thin films were deposited by bipolar pulse reactive magnetron sputtering technique with different experiment parameters. Digital microscope and UV-Vis spectroscopy were used to study the surface structure and optics band gaps of the films. Confocal microscopy Raman spectrometer was used to study the Raman spectra of the silicon substrate

the as-deposited films and the annealed films. It is found that the films are Si-rich SiN

films and the most important influence factor on optics band gaps is the flow of nitrogen. The results of the Raman investigation show that the amorphous and crystalline silicon peaks appear in the film. After annealing

the amorphous silicon peaks were weakened or disappeared. It indicates that the crystallization appears in the film apparently. The shift of crystalline silicon peaks shows that silicon nanocrystals appear in the film

and the average size is about 6.6 nm.

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Keywords

references

Hezel R, Sshorner R. Plasma Si nitride——A promising dielectric to achieve high quality silicon MIS/IL solar cells [J].J. Appl. Phys., 1981, 52(4):3076-3079.[2] Park N M, Choi C J, Seong T Y, et al. Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride [J]. Phys. Rev. Lett., 2001, 86(7):1355-1357.[3] Taewook K, Chang H, Baekhyun K, et al. Quantum confinement effect in crystalline silicon quantum dots in silicon nitride grown using SiH and NH [J]. Appl. Phys. Lett., 2006, 88(12):123102-1-3.[4] Hao H L, Wu L K, Shen W Z, et al. Origin of visible luminescence in hydrogenated amorphous silicon nitride [J]. Appl. Phys. Lett., 2007, 91(20):201922-1-3.[5] Taue J. Amorphous and Liquid Semiconductors [M]. Berlin:Springer Verlag, 1974:25-27.[6] Maley N, Lannin J S. Influence of hydrogen on vibrational and optical properties of a-Si1-xHx alloys [J]. Phys. Rev. B, 1987, 36(2):1146-1152.[7] Mercaldo, Veneri L V, Esposito P D, et al. Annealing effects on a-SiNx grown by PECVD using different gas mixtures [J]. Phys. Status Solid c, 2010, 7(3-4):832-835.[8] Cardona M, Guntherod. Light Scattering in Solid [M]. Berlin:Springer Verlag, 1980:42-48.[9] Ma Ziguang, Wang Wenxin, Wang Xiaoli, et al. The optical and electrical properties of GaN epitaxial films with SiNx interlayers inserted at different position [J]. Chin. J. Lumin.(发光学报), 2011, 32(10):1014-1019 (in Chinese).

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