Time-resolved Photoluminescence Studies of Polycrystalline CdS/CdTe

DING Han; LI Ze-long; QIU Zhi-ren; JIANG Shao-ji

doi:10.3788/fgxb20123306.0576

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Time-resolved Photoluminescence Studies of Polycrystalline CdS/CdTe

Synthesis and Properties of Materials | 更新时间：2020-08-12

- Time-resolved Photoluminescence Studies of Polycrystalline CdS/CdTe
- Chinese Journal of Luminescence Vol. 33, Issue 6, Pages: 576-580(2012)
- 作者机构：
  
  中山大学光电材料与技术国家重点实验室,广东广州,510275
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20123306.0576
  CLC： O433
- Received：18 March 2012，
  
  Revised：2012-4-19，
  
  Published Online：10 June 2012，
  
  Published：10 June 2012
- 稿件说明：
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丁罕, 李泽龙, 丘志仁, 江绍基. CdS/CdTe多晶薄膜的时间光谱特性[J]. 发光学报, 2012,(6): 576-580

DING Han, LI Ze-long, QIU Zhi-ren, JIANG Shao-ji. Time-resolved Photoluminescence Studies of Polycrystalline CdS/CdTe[J]. Chinese Journal of Luminescence, 2012,(6): 576-580
丁罕, 李泽龙, 丘志仁, 江绍基. CdS/CdTe多晶薄膜的时间光谱特性[J]. 发光学报, 2012,(6): 576-580 DOI： 10.3788/fgxb20123306.0576.

DING Han, LI Ze-long, QIU Zhi-ren, JIANG Shao-ji. Time-resolved Photoluminescence Studies of Polycrystalline CdS/CdTe[J]. Chinese Journal of Luminescence, 2012,(6): 576-580 DOI： 10.3788/fgxb20123306.0576.

摘要

采用超短皮秒脉冲激光激发制备了SnO

:F 玻璃衬底和石英衬底的CdTe多晶薄膜

在室温下测量其稳态和瞬态荧光光谱。结果表明

随着激发功率的增大

其荧光光谱峰逐渐展宽

并发生蓝移。对于退火处理的样品

其荧光光谱伴随主峰旁出现一个肩峰

是Cl 原子与富Cd区存在的空位形成复合体引起的发射。其瞬态荧光光谱寿命呈双指数衰减

即表面效应所引起的慢过程和带边激子态发射的快过程组成。样品退火处理后荧光寿命变长

有利于电子-空穴对在复合发光前分离

提高电子空穴的迁移率

改善其光伏性能。

Abstract

In this work

the steady-state photoluminescence (PL) and time-resolved photoluminescence(TRPL) of polycrystalline CdTe on different substrates were measured at room temperature by a Nd:YAG picosecond laser as the excitation source. With the increasing of pump power

the PL spectra have been broadened towards high photon energy. The PL spectra of the annealed sample exhibit another small band

which is attributed to the donor-acceptor pair recombination by a chlorine donor and a cadmium vacancy complex acceptor. The PL decay curve presents bi-exponential processes. The processes with long and short lifetimes are related to surface trapping state and band-edge excitonic state

respectively. Annealing treatment makes the fluorescence lifetime longer and benefits for the separation of the electron-hole pair before being composited.

关键词

Keywords

references

Zhong Ze, Sun Lijie, Xu Xiaoqiu, et al. Effect of high temperature annealing in nitrogen on the luminescence property of ZnO films [J]. Chin. J. Lumin.(发光学报), 2010, 31(3):359-363 (in Chinese).

Xu Yandong, Li Qingshan, Meng Yanfeng, et al. Influences of annealing treatment on structure and optical properties of ZnS films [J]. Chin. J. Lumin.(发光学报), 2009, 30(5):634-639 (in Chinese).

Zhang Xia, Liu Yuzhen, Kang Chaoyang, et al. Effects of annealing atmosphere and temperature on the structure and photoluminescence of ZnO films prepared by pulsed laser deposition [J]. Chin. J. Lumin.(发光学报), 2010, 31(5):613-618 (in English).

Moutinho H R, Al-Jassim M M, Levi D H, et al. Effects of CdCl2 treatment on the recrystallization and electro-optical properties of CdTe thin films [J]. J. Vac. Sci. Technol., 1998, 16(3):1251-1257.

Moutinho H R, Al-Jassim M M, Levi D H, et al. Investigation of induced recrystallization and stress in close-spaced sublimated and radio-frequency magnetron sputtered CdTe thin films [J]. J. Vac. Sci. Technol., 1999, 17(4):1793-1798.

Nair P K, Parmananda P, Nair M T S. Mathematical model simulating the growth of compound semiconductor thin films via chemical bath deposition [J]. Journal of Crystal Growth, 1998, 206(1-2):68-74.

Van Gheluwe J, Versluys J, Poelman D, et al. Photoluminescence study of polycrystalline CdS/CdTe thin film solar cells [J]. Thin Solid Films, 2005, 480-481(S1):264-268.

Moutinho H R, Albin D, Yan Y, et al. Deposition and properties of CBD and CSS CdS thin films for solar cell application [J]. Thin Solid Films, 2003, 436(2):175-180.

Romeo N, Bosio A, Tedeschi R, et al. Growth of polycrystalline CdS and CdTe thin layers for high efficiency thin film solar cells [J]. Materials Chemistry and Physics, 2000, 66(2-3):201-206.

Wang Wenwu, Zheng Jiagui, Feng Lianghuan, et al. Spectral analysis of the effect of annealing on CdTe polycrystalline film [J]. Spectroscopy and Spectral Analysis (光谱学与光谱分析), 2010, 30(3):753-756 (in Chinese).

Romeo N, Bosio A, Canevari V, et al. Recent progress on CdTe/CdS thin film solar cells [J]. Solar Energy, 2004, 77(6):795-801.

Wu Lili, Feng Lianghuan, Cai Wei, et al. Microstructure and photoluminescence spectroscopy on CSS deposited CdTe films [J]. Chinese Journal of Semiconductors (半导体学报), 2003, 24(8):831-834 (in Chinese).

Mahathongdy Y, Albin D S, Wolden C A, et al. Vapor CdCl2-optimization and screening experiments for an all dry chloride treatment of CdS/CdTe solar cells //15th Conference NCPV Photovoltaics Program Review,Denver, USA:NCPV, 1998:236-240.

Xu ZhenJia. Examination and Analysis of Semiconductor [M]. Beijing:Science Press, 2007:583,201 (in Chinese).

Fenollosa M A H, Halliday D P, Durose K, et al. Photoluminescence studies of CdS/CdTe solar cells treated with oxygen [J]. Thin Solid Films, 2003, 431(1):176-180.

Metzger W K, Albin D, levi D, et al. Time-resolved photoluminescence studies of CdTe solar cells [J]. J. Appl. Phys., 2003, 94(5):3549-3555.

Javier A, Magana D, Jennings T, et al. Nanosecond exciton recombination dynamics in colloidal CdSe quantum dots under ambient conditions [J]. Appl. Phys. Lett., 2003, 83(7):1423-1425.

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