The Novel Passivation Method for 980 nm Semiconductor Laser Diode Face Coating

LI Zai-jin; LI Te; LU Peng; QU Yi; BO Bao-xue; LIU Guo-jun; WANG Li-jun

doi:10.3788/fgxb20123305.0525

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The Novel Passivation Method for 980 nm Semiconductor Laser Diode Face Coating

paper | 更新时间：2020-08-12

- The Novel Passivation Method for 980 nm Semiconductor Laser Diode Face Coating
- Chinese Journal of Luminescence Vol. 33, Issue 5, Pages: 525-528(2012)
- 作者机构：
  
  1. 中国科学院长春光学精密机械与物理研究所,吉林长春,130033
  2. 长春理工大学高功率半导体激光国家重点实验室,吉林长春,130022
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20123305.0525
  CLC： TN248.4
- Received：15 December 2011，
  
  Revised：12 March 2012，
  
  Published Online：10 May 2012，
  
  Published：10 May 2012
- 稿件说明：
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李再金, 李特, 芦鹏, 曲轶, 薄报学, 刘国军, 王立军. 980 nm半导体激光器腔面膜钝化新技术[J]. 发光学报, 2012,(5): 525-528

LI Zai-jin, LI Te, LU Peng, QU Yi, BO Bao-xue, LIU Guo-jun, WANG Li-jun. The Novel Passivation Method for 980 nm Semiconductor Laser Diode Face Coating[J]. Chinese Journal of Luminescence, 2012,(5): 525-528
李再金, 李特, 芦鹏, 曲轶, 薄报学, 刘国军, 王立军. 980 nm半导体激光器腔面膜钝化新技术[J]. 发光学报, 2012,(5): 525-528 DOI： 10.3788/fgxb20123305.0525.

LI Zai-jin, LI Te, LU Peng, QU Yi, BO Bao-xue, LIU Guo-jun, WANG Li-jun. The Novel Passivation Method for 980 nm Semiconductor Laser Diode Face Coating[J]. Chinese Journal of Luminescence, 2012,(5): 525-528 DOI： 10.3788/fgxb20123305.0525.

摘要

研究了不同腔面钝化方法对980 nm渐变折射率波导结构InGaAs/AlGaAs半导体激光器输出激光功率的影响。将980 nm半导体激光器管芯前后腔面不蒸镀钝化膜与蒸镀Si钝化膜和蒸镀ZnSe钝化膜的方法进行了对比。结果表明

蒸镀ZnSe钝化膜比蒸镀Si钝化膜的半导体激光器输出光功率提高了11%

比不蒸镀钝化膜的半导体激光器输出激光功率提高了42%。不蒸镀钝化膜的半导体激光器的失效电流为4.1 A

蒸镀Si钝化膜的半导体激光器的失效电流为5.1 A

蒸镀ZnSe钝化膜的半导体激光器的失效电流为5.6 A。对半导体激光器失效的原因进行了分析。在半导体激光器前后腔面蒸镀ZnSe钝化膜能有效地提高器件的输出光功率。

Abstract

The effect of the output power on difference passivation facet in 980 nm graded index waveguide structure InGaAs/AlGaAs laser diodes was studied. The output power of the 980 nm laser diodes with no facet passivation

Si passivation

and ZnSe passivation at the front and the back facet were compared. The test results show that output power of the ZnSe passivation method is 11% higher than Si passivation method

and is 42% higher than no facet passivation. The laser diode of no facet passivation is failure at the current is 4.1 A

the Si passivation is 5.1 A

ZnSe passivation is 5.6 A. The reasons of failure for difference passivation were analyzed. In conclusion

the method of ZnSe passivation facet can increase the output power of semiconductor lasers.

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references

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