Fabrication and Electroluminescent Properties of p-ZnO/n-SiC Heterojunction Device by MOCVD

SHI Zhi-feng; WU Bin; CAI Xu-pu; ZHANG Jin-xiang; WANG Hui; WANG Jin; XIA Xiao-chuan; DONG

doi:10.3788/fgxb20123305.0514

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Fabrication and Electroluminescent Properties of p-ZnO/n-SiC Heterojunction Device by MOCVD

paper | 更新时间：2020-08-12

- Fabrication and Electroluminescent Properties of p-ZnO/n-SiC Heterojunction Device by MOCVD
- Chinese Journal of Luminescence Vol. 33, Issue 5, Pages: 514-518(2012)
- 作者机构：
  
  1. 集成光电子国家重点联合实验室吉林大学电子科学与工程学院,吉林长春,130012
  2. 大连理工大学物理与光电工程学院, 辽宁大连 116023
- 作者简介：
- 基金信息：
  
  973"
- DOI：10.3788/fgxb20123305.0514
  CLC： TN383;O484.1
- Received：15 February 2012，
  
  Revised：28 March 2012，
  
  Published Online：10 May 2012，
  
  Published：10 May 2012
- 稿件说明：
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史志锋, 伍斌, 蔡旭浦, 张金香, 王辉, 王瑾, 夏晓川, 董鑫, 张宝林, 杜国同. MOCVD法制备的p-ZnO/n-SiC 异质结器件及其电致发光性能[J]. 发光学报, 2012,(5): 514-518

SHI Zhi-feng, WU Bin, CAI Xu-pu, ZHANG Jin-xiang, WANG Hui, WANG Jin, XIA Xiao-chuan, DONG Xin, ZHANG Bao-lin, DU Guo-tong. Fabrication and Electroluminescent Properties of p-ZnO/n-SiC Heterojunction Device by MOCVD[J]. Chinese Journal of Luminescence, 2012,(5): 514-518
史志锋, 伍斌, 蔡旭浦, 张金香, 王辉, 王瑾, 夏晓川, 董鑫, 张宝林, 杜国同. MOCVD法制备的p-ZnO/n-SiC 异质结器件及其电致发光性能[J]. 发光学报, 2012,(5): 514-518 DOI： 10.3788/fgxb20123305.0514.

SHI Zhi-feng, WU Bin, CAI Xu-pu, ZHANG Jin-xiang, WANG Hui, WANG Jin, XIA Xiao-chuan, DONG Xin, ZHANG Bao-lin, DU Guo-tong. Fabrication and Electroluminescent Properties of p-ZnO/n-SiC Heterojunction Device by MOCVD[J]. Chinese Journal of Luminescence, 2012,(5): 514-518 DOI： 10.3788/fgxb20123305.0514.

摘要

采用光辅助金属有机化学汽相沉积(PA-MOCVD)法在n-SiC(6H)衬底上制备出As掺杂的p型ZnO薄膜

并制备出相应的p-ZnO:As/n-SiC异质结器件。X射线衍射(XRD)和光致发光(PL)测试表明

ZnO薄膜具有较好的结构和光学特性。电流-电压(

I-V

)测试结果表明

该型异质结器件具有良好的整流特性

开启电压为5.0 V

反向击穿电压约为-13 V。正向偏压下

器件的电致发光(EL)谱表现出两个分别位于紫外和可见光区域的发光峰

通过和ZnO、SiC的PL谱对照

证实异质结器件的发光峰来源于ZnO侧的辐射复合。

Abstract

As-doped p-ZnO films were grown by photo-assisted metal-organic chemical vapor deposition (PA-MOCVD) system on n-SiC(6H) substrate and the p-ZnO/n-SiC heterojunction device was fabricated. The structural and optical properties of the As-doped ZnO film have been studied by X-ray diffraction (XRD) and photoluminescence (PL) measurements. A typical p-n junction rectification behavior was acquired with a turn-on voltage of 5.0 V and a reverse breakdown voltage of about －13 V. Under forward bias

two obvious emission peaks at ultraviolet (UV) and visible regions were detected. By comparing with the PL spectra of ZnO and SiC

the origin of the UV and visible emission peaks was confirmed from the radiative recombination of ZnO side.

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references

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