Hydrostatic Pressure and Screening Influence on Binding Energies of Impurity in Quantum Wells with Infinite Barriers

LIU He; WEN Shu-min; ZHAO Chun-wang; HA Si-hua

doi:10.3788/fgxb20123305.0492

您当前的位置：

首页 >

文章列表页 >

Hydrostatic Pressure and Screening Influence on Binding Energies of Impurity in Quantum Wells with Infinite Barriers

paper | 更新时间：2020-08-12

- Hydrostatic Pressure and Screening Influence on Binding Energies of Impurity in Quantum Wells with Infinite Barriers
- Chinese Journal of Luminescence Vol. 33, Issue 5, Pages: 492-498(2012)
- 作者机构：
  
  内蒙古工业大学理学院物理系, 内蒙古呼和浩特 010051
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20123305.0492
  CLC： O471.3
- Received：12 February 2012，
  
  Revised：28 March 2012，
  
  Published Online：10 May 2012，
  
  Published：10 May 2012
- 稿件说明：
移动端阅览
刘贺, 温淑敏, 赵春旺, 哈斯花. 压力及屏蔽对无限深量子阱中施主结合能的影响[J]. 发光学报, 2012,(5): 492-498

LIU He, WEN Shu-min, ZHAO Chun-wang, HA Si-hua. Hydrostatic Pressure and Screening Influence on Binding Energies of Impurity in Quantum Wells with Infinite Barriers[J]. Chinese Journal of Luminescence, 2012,(5): 492-498
刘贺, 温淑敏, 赵春旺, 哈斯花. 压力及屏蔽对无限深量子阱中施主结合能的影响[J]. 发光学报, 2012,(5): 492-498 DOI： 10.3788/fgxb20123305.0492.

LIU He, WEN Shu-min, ZHAO Chun-wang, HA Si-hua. Hydrostatic Pressure and Screening Influence on Binding Energies of Impurity in Quantum Wells with Infinite Barriers[J]. Chinese Journal of Luminescence, 2012,(5): 492-498 DOI： 10.3788/fgxb20123305.0492.

摘要

对GaAs/Al

As和GaN/Al

N无限深量子阱系统

考虑压力及屏蔽效应

利用变分方法数值计算这两种系统中的杂质态结合能。给出了结合能随阱宽和压力的变化关系

同时讨论了有无屏蔽时的区别。结果表明

结合能随压力增大而增大

随阱宽增大而减小;屏蔽效应随着压力的增加而增加

并且显著降低了杂质态的结合能。

Abstract

Under the effects of hydrostatic pressure and screening on the infinite GaAs/Al

As and GaN/Al

N quantum wells

the binding energies of the impurity are calculated by the variational method in the two systems. The impurity binding energies as functions of the well width and pressure are given. The result indicates that the binding energy increases with pressure

but decreases with well width. We also discussed the binding energies of impurity with and without the screening effects. It is found that the screening effect became stronger as pressure increases

and then decreases the binding energy of impurity significantly.

关键词

Keywords

references

Thompson M P, Auner G W, Zheleva T S, et al. Deposition factors and band gap of zinc-blende AlN [J]. Appl. Phys., 2000, 89(6):3331-3336.[2] Lemos V, Silveira E, Leite J R, et al. Evidence for phase-separated quantum dots in cubic InGaN layers from resonant Raman scattering [J]. Phys. Rev. Lett., 2000, 84(16):3666-3669.[3] Park S H, Chuang S L. Comparison of zinc-blende and wurtzite GaN semiconductors with spontaneous polarization and piezoelectric field effects [J]. J. Appl. Phys., 2000, 87(1):353-364.[4] Li Zhenyong, Wang Mei, Su Xiyu, et al. First-principles study on electron structure and light absorption of the blende Ga1-xAlxN systems [J]. Chin. J. Lumin.(发光学报), 2010, 31(4):521-526 (in Chinese).[5] Bastard G. Hydrogenic impurity states in a quantum well: A simple model [J]. Phys. Rev. B, 1981, 24(8):4714-4722.[6] Hollox D M, Antoniewicz P R. Bound state of an external impurity at a semiconductor-semiconductor interface in the presence of a magnetic field [J]. Phys. Rev. B, 1986, 33(12):8558-8563.[7] Mailhiot C, Chang Y C, McGill T C. Energy spectra of donors in GaAs/Al1-xGaxAs quantum well structures in the effective-mass approximation [J]. Phys. Rev. B, 1982, 26:4449-4457.[8] Liu W, Quinn J J. Shallow-impurity states in semiconductor quantum-well structures [J]. Phys. Rev. B, 1985, 31:2348-2352.[9] Zhang Hairui, Xiao Jinglin. The Effective mass of weakly-coupling polaron in a triangular quantum well induced by the rashba effect [J]. Chin. J. Lumin.(发光学报), 2010, 31(1):12-16 (in English).[10] Zhang Min, Ban S L. Influence of magnetic field on bound polarons semiconductor GaAs/Al1-xGaxAs heterojunctions [J]. Journal of Semiconductors (半导体学报), 2004, 25(12):70-75 (in Chinese).[11] Zhao G J, Liang X X, Ban S L. Binding energies of donors in quantum wells under hydrostatic pressure [J]. Phys. Lett. A, 2003, 319(1-2):191-197.[12] Wen Shumin, Ban Shiliang. Screening influence on binding energies of donors in quantum wells with finite barriers under hydrostatic pressure [J]. Journal of Semiconductors (半导体学报), 2006, 27(1):63-67 (in Chinese).[13] Yuan Lihua, An Zhanghui, Zhang Cairong, et al. Polaron effects of exciton in ZnSe/ZnS parabolic quantum wells [J]. Chin. J. Lumin.(发光学报), 2010, 31(3):348-352 (in English).[14] Ban S L, Hasbun J E. Level in a quasi-two dimensional heterojunction system [J]. Solid State Commun., 1999, 109:93-98.[15] Adachi S. GaAs, AlAs, Al1-xGaxAs material parameters for use in research and device applications [J]. J. Appl. Phys., 1985, 58(3):R1-R29.[16] Lam P K, Cohen M L, Martinze G. Analytic relation between bulk moduli and lattice constants [J]. Phys. Rev. B, 1987, 35:9190-9194.[17] Holtz M, Seon M, Brafran O, et al. Pressure dependence of the optic phonon energies in Al1-xGaxAs [J]. Phys. Rev. B, 1996, 54(12):8714-8720.[18] Karch K, Bechstedt F, Pletl T. Lattice dynamics of GaN: Effects of 3d electrons [J]. Phys. Rev. B, 1997, 56(7):3560-3563.[19] Karch K, Bechstedt F. Ab initio lattice dynamics of BN and AlN covalent versus ionic forces [J]. Phys. Rev. B, 1997, 56(12):7404-7415.[20] Wagner J M, Bechstedt F. Pressure dependence of the dielectric and lattice dynamical properties of GaN and AlN [J]. Phys. Rev. B, 2000, 62(7):4526-4534.[21] Wang H, Farias G A, Freire V N. Interface related exciton energy blue shift in GaN/AlxGa1-xN zinc blende and wurtzite single quantum wells [J]. Phys. Rev. B, 1999, 60(8):5705- 5713.[22] Phillips J C, Lucovsky G. Bonds and Bands in Semiconductors [M]. 2nd Edition, New York: Momentum Press, 1973:125-129.[23] Wei Suhai, Zunger A. Predicted band gap pressure coefficients of all diamond and zinc-blende semiconductors: Chemical trends [J]. Phys. Rev. B, 1999, 60(8):5404-5411.

Views

115

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Hydrostatic Pressure and Screening Influence on Binding Energies of Impurity in Quantum Wells with Infinite Barriers Under An External Magnetic Field

Interface Effect on the Impurity State in a GaN/Ga_1-xAl_xN Quantum Dot under Pressure

Research Progresses on Infrared Superluminescent Diodes

Mechanism of a-AlN Surface Morphology Evolution by High Temperature Annealing

High Temperature-stable 25 Gbit/s 850 nm Vertical-cavity Surface-emitting Lasers

Related Author

ZHANG Min

YAN Zu-wei

YANG Jinghang

YAN Changling

LIU Yun

LI Yifei

FENG Yuan

HAO Yongqin

Related Institution

Department of Physics, Inner Mongolia University of Technology

Department of Physics, Inner Mongolia Agricultural University

College of Physics and Electron Information, Inner Mongolia Normal University

Shoole of Physics Science and Technology, Inner Mongolia University

State Key Laboratory on High-power Semiconductor Lasers， Changchun University of Science and Technology

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰