Luminescence and Encapsulation Properties of BaSi2O2N2 Doped with Divalent Europium

WANG Ling-li; NI Hai-yong; ZHANG Qiu-hong

doi:10.3788/fgxb20123305.0465

您当前的位置：

首页 >

文章列表页 >

Luminescence and Encapsulation Properties of BaSi₂O₂N₂ Doped with Divalent Europium

paper | 更新时间：2020-08-12

- Luminescence and Encapsulation Properties of BaSi₂O₂N₂ Doped with Divalent Europium
- Chinese Journal of Luminescence Vol. 33, Issue 5, Pages: 465-469(2012)
- 作者机构：
  
  广州有色金属研究院稀有金属研究所, 广东广州 510650
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20123305.0465
  CLC： O482.31
- Received：11 February 2012，
  
  Revised：12 March 2012，
  
  Published Online：10 May 2012，
  
  Published：10 May 2012
- 稿件说明：
移动端阅览
王灵利, 倪海勇, 张秋红. LED用绿色荧光粉BaSi2N2O2:Eu2+的发光和封装性能[J]. 发光学报, 2012,(5): 465-469

WANG Ling-li, NI Hai-yong, ZHANG Qiu-hong. Luminescence and Encapsulation Properties of BaSi2O2N2 Doped with Divalent Europium[J]. Chinese Journal of Luminescence, 2012,(5): 465-469
王灵利, 倪海勇, 张秋红. LED用绿色荧光粉BaSi2N2O2:Eu2+的发光和封装性能[J]. 发光学报, 2012,(5): 465-469 DOI： 10.3788/fgxb20123305.0465.

WANG Ling-li, NI Hai-yong, ZHANG Qiu-hong. Luminescence and Encapsulation Properties of BaSi2O2N2 Doped with Divalent Europium[J]. Chinese Journal of Luminescence, 2012,(5): 465-469 DOI： 10.3788/fgxb20123305.0465.

摘要

采用高温固相法合成了白光LED用蓝绿色荧光材料BaSi

:Eu

。用X射线衍射(XRD)、光致发光(PL)等对荧光材料进行了表征。XRD结果表明

所制备的样品为较好的单相。BaSi

:Eu

在395 nm和460 nm激发下均具有较高的发射强度

发射峰位于492 nm附近。当Eu

的摩尔分数为4%时

可以获得最佳的样品发光强度。将荧光材料封装在紫外和蓝光芯片上制作了LED器件

两种器件均发射出强的蓝绿色荧光

色坐标分别为(0.092 0

0.428 2)和(0.112 9

0.223 0)。

Abstract

The oxonitride blue-green phosphor BaSi

∶Eu

has been prepared by solid state reaction. The prepared BaSi

∶Eu

phosphors are characterized by X-ray powder diffraction (XRD)

photoluminescence (PL)

etc.

The XRD results show that pure phase phosphors are obtained. The PL results demonstrate that BaSi

∶Eu

shows high efficient emission with peak at around 492 nm. The best emission can be obtained with the Eu

mole fraction of 4%. The phosphors are encapsulated on the ultraviolet and blue chips

high blue-green luminescence is obtained in both devices

and the CIE parameters are (0.092 0

0.428 2) and (0.112 9

0.223 0)

respectively.

关键词

Keywords

references

Shimizu Y, Sakano K, Noguchi Y, et al. Light emitting device having a nitride compound semiconductor and a phosphor containing a garnet fluorescent material: US, 5998925 .1999-12-07.[2] Kuboniwa S, Kawai H, Hoshina T, et al. Cathodoluminescence saturation and decay characteristics of ZnS:Cu, Al phosphor [J]. Jpn. J. Appl. Phys., 1980, 19(9):1647-1653.[3] Tabei M, Shionoya S, Ohmatsu H, et al. Mechanism of the killer effect of iron-group ions on the green luminescence in ZnS:Cu:Al phosphors [J]. Jpn. J. Appl. Phys., 1975, 14(2):240-247.[4] Qi L, Lee B I, Kim J M, et al. Synthesis and characterization of ZnS:Cu,Al phosphor prepared by a chemical solution method [J]. J. Lumin., 2003, 104(4):261-266.[5] Tabei M, Shionoya S. Mechanism of infrared stimulation and quenching in ZnS:Cu,Al phosphors [J]. J. Lumin., 1977, 15(2):201-215.[6] Chen Y Y, Duh J G, Chiou B S, et al. Luminescent mechanisms of ZnS:Cu:Cl and ZnS:Cu:Al phosphors [J]. Thin Solid Films, 2001, 392(1):50-55.[7] Liu Hongli, He Dawei, Shen Fang, et al. Optical properties of blue-emitting BaAl2S4:Eu thin-films for inorganic EL display [J]. J. Rare Earths, 2006, 24(1):121-124.[8] Kim J S, Park Y H, Choi J C, et al. Optical and structural properties of Eu2+-doped (Sr1-xBax)2SiO4 phosphors [J]. J. Electrochem. Soc., 2005, 152(9):135-137.[9] Park K, Choi N, Kim J. Temperature and excitation power-resistant white-light emission of the T-phase (Ba,Ca)2SiO4:Eu2+,Mn2+ phosphor [J]. Solid State Commun., 2010, 150(7):329-332.[10] Kim J S, Jeon P E, Choi J C, et al. Emission color variation of M2SiO4:Eu2+ (M=Ba, Sr, Ca) phosphors for light-emitting diode [J]. Solid State Commun., 2005, 133(3):187-190.[11] Höppe H A, Lutz H, Morys P, et al. Luminescence in Eu2+-doped Ba2Si5N8: fluorescence, thermoluminescence, and upconversion [J]. J. Phys. Chem. Solids, 2000, 61(12):2001-2006.[12] Li Y Q, Delsing A C A, de With G, et al. Luminescence properties of Eu2+-activated alkaline-earth silicon-oxynitride MSi2O2-δN2+2/3δ(M=Ca, Sr, Ba):A promising class of novel LED conversion phosphors [J]. Chem. Mater., 2005, 17(12):3242-3248.[13] Zhang Q H, Wang J, Ye C W, et al. Structure, composition, morphology, photoluminescence and cathodoluminescence properties of ZnGeN2 and ZnGeN2:Mn2+ for field emission displays [J]. Acta Mater., 2010, 58(20):6728-6735.[14] Jiao Xuechen, Hao Zhendong, Zhang Xia, et al. Fabrication and optical properties of MgAl2O4:Mn2+ [J]. Chin. J. Lumin.(发光学报), 2011, 32(11):1139-1142 (in Chinese).[15] Toquin R L, Cheetham A K. Red-emitting cerium-based phosphor materials for solid-state lighting applications [J]. Chem. Phys. Lett., 2006, 423(4-6):352-356.[16] Sakuma K, Hirosaki N, Xie R J, et al. Luminescence properties of (Ca,Y)-α-SiAlON:Eu phosphors [J]. Mater. Lett., 2007, 61(2):547-550.[17] Oeckler O, Stadler F, Rosenthal T, et al. Real structure of SrSi2O2N2 [J]. Solid-State Sci., 2007, 9(2):205-212.[18] Kechele J A, Oeckler O, Stadler F, et al. Structure elucidation of BaSi2O2N2——A host lattice for rare-earth doped luminescent materials in phosphor-converted(pc)-LEDs [J]. Solid-State Sci., 2009, 11(2):537-543.[19] Bachmann V, Jüstel T, Meijerink A, et al. Luminescence properties of SrSi2O2N2 doped with divalent rare earth ions [J]. J. Lumin., 2006, 121(2):441-449.[20] Bachmann V, Ronda C, Oeckler O, et al. Color point tuning for (Sr,Ca,Ba)Si2O2N2:Eu2+ for white light LEDs [J]. Chem. Mater., 2009, 21(2):316-325.[21] Zhang M, Wang J, Zhang Z, et al. A tunable green alkaline-earth silicon-oxynitride solid solution (Ca1-xSrx)Si2O2N2:Eu2+ and its application in LED [J]. Appl. Phys. B, 2008, 93:829-835.[22] Zhang M, Li B H, Wang J, et al. The temperature dependent luminescence properties of BaAl2-xSixO4-xNx:Eu2+ and its application in yellowish green light emitting diode [J]. J. Mater. Res., 2009, 24(8):2589-2595.[23] Wang Lingli, Ni Haiyong, Zhang Qiuhong, et al. The luminescence properties of new FED phosphor MSi2N2O2:Eu2+(M=Sr,Ba) [J]. Chin. J. Lumin.(发光学报), 2011, 32(6):561-564 (in Chinese).[24] Yun B G, Miyamoto Y, Yamamoto H, Luminescence properties of (Sr1-uBau)Si2O2N2:Eu2+, yellow or orange phosphors for white LEDs, synthesized with (Sr1-uBau)2SiO4:Eu2+ as a precursor [J]. J. The Electrochem. Soc., 2007, 154(10): J320-J325.

Views

126

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Regulating Near-infrared Luminescence of ZnGa₂O₄∶Cr³⁺ via F/O Anion Substitution

Recent Progress on Cr³⁺ Doped Broad Band NIR Phosphors

Sol-combustion Synthesis and Analysis of Submicron Sized Ca_2.40Lu_0.54ScMgSi₃O₁₂：0.06Ce³⁺ Phosphor for White Light Emitting Diodes

The Difference of Luminous Performance Between Traditional Phosphor Packaging LED and Remote Phosphor LED

Investigation of Spectroscopic Properties in Eu²⁺ Activated Ba_5-xSr_x(PO₄)₃Cl

Related Author

WU Yubo

YU Shijie

HUANG Qianxing

SHAO Qiyue

ZHANG Liang-liang

ZHANG Jia-hua

HAO Zhen-dong

WU Hao

Related Institution

School of Material Science and Engineering， Southeast University

State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China

School of Chemistry and Chemical Engineering, Guangzhou University

Department of Electronic Science, Fujian Engineering Research Center for Solid-state Lighting, Xiamen University

College of Physics Science and Technology, Hebei University

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰