Fabrication and Characteristics of ZnO/ZnMgO Heterostructure Field-effect Transistor

ZHU Zhen-bang; GU Shu-lin; ZHU Shun-ming; YE Jian-dong; HUANG Shi-min; GU Ran; ZHENG You-d

doi:10.3788/fgxb20123304.0449

您当前的位置：

首页 >

文章列表页 >

Fabrication and Characteristics of ZnO/ZnMgO Heterostructure Field-effect Transistor

paper | 更新时间：2020-08-12

- Fabrication and Characteristics of ZnO/ZnMgO Heterostructure Field-effect Transistor
- Chinese Journal of Luminescence Vol. 33, Issue 4, Pages: 449-452(2012)
- 作者机构：
  
  南京大学电子科学与工程学院和南京微结构国家实验室,江苏南京,210093
- 作者简介：
- 基金信息：
  
  973"
- DOI：10.3788/fgxb20123304.0449
  CLC： TN386
- Received：07 December 2011，
  
  Revised：17 February 2012，
  
  Published Online：10 April 2012，
  
  Published：10 April 2012
- 稿件说明：
移动端阅览
朱振邦, 顾书林, 朱顺明, 叶建东, 黄时敏, 顾然, 郑有炓. ZnO/ZnMgO异质结场效应管的制备与性能研究[J]. 发光学报, 2012,33(4): 449-452

ZHU Zhen-bang, GU Shu-lin, ZHU Shun-ming, YE Jian-dong, HUANG Shi-min, GU Ran, ZHENG You-dou. Fabrication and Characteristics of ZnO/ZnMgO Heterostructure Field-effect Transistor[J]. Chinese Journal of Luminescence, 2012,33(4): 449-452
朱振邦, 顾书林, 朱顺明, 叶建东, 黄时敏, 顾然, 郑有炓. ZnO/ZnMgO异质结场效应管的制备与性能研究[J]. 发光学报, 2012,33(4): 449-452 DOI： 10.3788/fgxb20123304.0449.

ZHU Zhen-bang, GU Shu-lin, ZHU Shun-ming, YE Jian-dong, HUANG Shi-min, GU Ran, ZHENG You-dou. Fabrication and Characteristics of ZnO/ZnMgO Heterostructure Field-effect Transistor[J]. Chinese Journal of Luminescence, 2012,33(4): 449-452 DOI： 10.3788/fgxb20123304.0449.

摘要

利用等离子体增强化学气相沉积(PECVD)技术

在ZnO/ZnMgO异质结构上制备SiO

作为栅绝缘层

采用光刻与腐蚀工艺制备ZnO/ZnMgO异质结场效应管。电学性能测试及计算结果表明器件栅压调控作用明显。发现栅端漏电流对器件性能造成一定影响。在低温条件下

栅绝缘层产生钝化

从而能够改善器件的性能。

Abstract

The characteristics of a ZnO/ZnMgO heterostructure field-effect transistor (HFET) were reported in this paper. The HFET was grown on

-plane sapphire substrate by metal-organic vapor phase epitaxy (MOVPE) technology

and was fabricated by a conventional photolithography technique combined with wet etching. The experiment results indicated that the HFET was an n-channel depletion type with a transconductance of 180 Smm

-1

and mobility of 182 cm

-1

at room temperature. The property was limited by leakage current through the SiO

gate insulator. At low temperature

the performance was improved due to the reduced leakage current.

关键词

Keywords

references

Hoffman R L, Norris B J, Wager J T. ZnO-based transparent thin-film transistors [J]. Appl. Phys. Lett., 2003, 82(5):733-735.[2] Masuda S, Kitamura K, Okumura Y, et al. Transparent thin film transistors using ZnO as an active channel layer and their electrical properties [J]. J. Appl. Phys., 2003, 93(3):1624-1630.[3] Ye J D, Pannirselvam S, Lim S T, et al. Two-dimensional electron gas in Zn-polar ZnMgO/ZnO heterostructure grown by metal-organic vapor phase epitaxy [J]. Appl. Phys. Lett., 2010, 97(11):111908-1-3.[4] Sasa S, Ozaki M, Koike K, et al. High-performance ZnO/ZnMgO field-effect transistors using a hetero-metal-insulator-semiconductor structure [J]. Appl. Phys. Lett., 2006, 89(5):53502-1-3.[5] Joseph F, Denis M, Yusuke K, et al. Magnesium doping controlled density and mobility of two-dimensional electron gas in MgxZn1-xO/ZnO heterostructures [J]. Appl. Phys. Express, 2011, 4(9):091101-1-3.[6] Tsukazaki A, Ohtomo A, Kita T, et al. Quantum Hall effect in polar oxide heterostructures [J]. Science, 2007, 315(5817):1388-1391.[7] Tsukazaki A, Akasaka S, Nakahara K, et al. Observation of the fractional quantum Hall effect in an oxide [J]. Nat. Mater., 2010, 9(11):889-893.[8] Liu Bingce, Liu Cihui, Sun Lijie, et al. Influence of ZnO microstructure variation on its photoelectricity characteristics [J]. Chin. J. Lumin.(发光学报), 2010, 31(2):194-198 (in Chinese).[9] Jogai B. Influence of surface states on the two-dimensional electron gas in AlGaN/GaN heterojunction field-effect transistors [J]. J. Appl. Phys., 2003, 93(3):1631-1635.[10] Chen Hui, Gu Shulin, Zhu Shunmin. Influence of different substrate and pressure on growth and properties of ZnMgO films [J]. Chin. J. Lumin.(发光学报), 2011, 32(5):482-486 (in Chinese).[11] Su Shichen, Lv Youming. Ultraviolet electroluminescence of ZnMgO/nZnO/ZnMgO/pGaN heterojunction light emitting diode [J]. Chin. J. Lumin.(发光学报), 2011, 32(8):821-824 (in Chinese).

Views

208

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Research Progress on Rare Earth Doped Metal Oxide Thin Film Transistors

Effect of Ta₂O₅-PMMA Compound Gate Insulator on The Performance of Organic Field Effect Transistors

Infrared Absorption Spectra and Electrical Properties of Si Substrate Ge Thin Films

Improvement of The Field Effect Mobility of OTFT by Using Organic Hole Transport Material

Simulation Study on Influence of The Carrier Mobility on The Performances of Organic Solar Cells

Related Author

PENG Junbiao

HUANG Xianglan

YIN Qiang

REN Li-peng

LI Chun-jing

WANG Wei

SHI Xiao-dong

LI Ji-jun

Related Institution

State Key Laboratory of Luminescent Materials and Devices， South China University of Technology

School of Electronics and Information Engineering, Hebei University of Technology, Tianjin Key Laboratory of Electronic Materials and Device

College of Science, Inner Mongolia University of Technology

College of Arts and Sciences, Shanghai Maritime University

Wulanchabu Radio-TV

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰