Design and Fabrication of Three-terminal Carrier-injection-type

HAN Lei; ZHANG Shi-lin; GUO Wei-lian; MAO Lu-hong; XIE Sheng; ZHANG Xing-jie; GU Xiao

doi:10.3788/fgxb20123304.0444

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Design and Fabrication of Three-terminal Carrier-injection-type

paper | 更新时间：2020-08-12

- Design and Fabrication of Three-terminal Carrier-injection-type
- Chinese Journal of Luminescence Vol. 33, Issue 4, Pages: 444-448(2012)
- 作者机构：
  
  1. 天津大学电子信息工程学院天津,300072
  2. 天津工业大学信息与通信工程学院天津,300161
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20123304.0444
  CLC： TN383
- Received：08 February 2012，
  
  Revised：26 February 2012，
  
  Published Online：10 April 2012，
  
  Published：10 April 2012
- 稿件说明：
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韩磊, 张世林, 郭维廉, 毛陆虹, 谢生, 张兴杰, 谷晓. 标准CMOS工艺载流子注入型三端Si-LED的设计与研制[J]. 发光学报, 2012,33(4): 444-448

HAN Lei, ZHANG Shi-lin, GUO Wei-lian, MAO Lu-hong, XIE Sheng, ZHANG Xing-jie, GU Xiao. Design and Fabrication of Three-terminal Carrier-injection-type[J]. Chinese Journal of Luminescence, 2012,33(4): 444-448
韩磊, 张世林, 郭维廉, 毛陆虹, 谢生, 张兴杰, 谷晓. 标准CMOS工艺载流子注入型三端Si-LED的设计与研制[J]. 发光学报, 2012,33(4): 444-448 DOI： 10.3788/fgxb20123304.0444.

HAN Lei, ZHANG Shi-lin, GUO Wei-lian, MAO Lu-hong, XIE Sheng, ZHANG Xing-jie, GU Xiao. Design and Fabrication of Three-terminal Carrier-injection-type[J]. Chinese Journal of Luminescence, 2012,33(4): 444-448 DOI： 10.3788/fgxb20123304.0444.

摘要

采用无锡华润上华(CSMC) 0.5 m 标准CMOS工艺

设计并制备了一种新型的高发光功率载流子注入型三端Si-LED器件。该器件在p型衬底上进行n

掺杂

与p衬底形成两个相对的n

p结

其中一个结正向偏置

发出峰值波长在1 100 nm附近的红外光;另一个结同样正偏

作为注入结对发光进行调制。测试结果显示:第三端注入载流子明显增强了总体的发光功率

在10 mA偏置电流、3 V调制电压下

可获得1 nW的光功率

与单结相比提高了两个数量级。由于工作电压低

该器件可与目前主流的CMOS工艺共电源单芯片集成

在光电集成领域具有一定的应用前景。

Abstract

This paper demonstrates a novel carrier-injection-type silicon based light emitting device (LED) with three terminals and high light emission intensity. The device was designed and fabricated in the commercial standard 0.5 m CMOS process offered by Central Semiconductor Manufacturing Corporation (CSMC) without any modification. Two shallow diagonal n

p junctions were embedded on the p type substrate. One junction biased in forward mode emits infrared light

and the other is also forward biased to inject carriers into the light emitting region. Experiment results show that

at 10 mA biased current and 3 V modulation voltage

1 nW optical power can be obtained and its approximately two orders of magnitude higher than the single junction. Due to the low operating voltage

the device can be monolithic integrated with the current mainstream silicon CMOS technology and shows a great potential in optoelectronic integration field.

关键词

Keywords

references

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