Memory Effect and Charge-transport Mechanisms of Write-once-read-many-times Bistable Devices Based on ZnS Quantum Dots Embedded in Poly-4-vinyl-phenol Layer

WU Yan-yu; ZHANG Xiao-song; XU Jian-ping; NIU Xi-ping; LUO Cheng-yuan; LI Mei-hui; LI Ping

doi:10.3788/fgxb20123304.0428

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Memory Effect and Charge-transport Mechanisms of Write-once-read-many-times Bistable Devices Based on ZnS Quantum Dots Embedded in Poly-4-vinyl-phenol Layer

paper | 更新时间：2020-08-12

- Memory Effect and Charge-transport Mechanisms of Write-once-read-many-times Bistable Devices Based on ZnS Quantum Dots Embedded in Poly-4-vinyl-phenol Layer
- Chinese Journal of Luminescence Vol. 33, Issue 4, Pages: 428-432(2012)
- 作者机构：
  
  1. 天津理工大学电子信息工程学院天津,300384
  2. 天津理工大学材料物理研究所显示材料与光电器件教育部重点实验室天津,300384
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20123304.0428
  CLC： O626
- Received：12 February 2012，
  
  Revised：22 February 2012，
  
  Published Online：10 April 2012，
  
  Published：10 April 2012
- 稿件说明：
移动端阅览
吴燕宇, 张晓松, 徐建萍, 牛喜平, 罗程远, 李美惠, 李萍, 石庆良, 李岚. 基于ZnS量子点与聚合物混合层的有机双稳态器件的记忆特性及其载流子传输机制[J]. 发光学报, 2012,33(4): 428-432

WU Yan-yu, ZHANG Xiao-song, XU Jian-ping, NIU Xi-ping, LUO Cheng-yuan, LI Mei-hui, LI Ping, SHI Qing-liang, LI Lan. Memory Effect and Charge-transport Mechanisms of Write-once-read-many-times Bistable Devices Based on ZnS Quantum Dots Embedded in Poly-4-vinyl-phenol Layer[J]. Chinese Journal of Luminescence, 2012,33(4): 428-432
吴燕宇, 张晓松, 徐建萍, 牛喜平, 罗程远, 李美惠, 李萍, 石庆良, 李岚. 基于ZnS量子点与聚合物混合层的有机双稳态器件的记忆特性及其载流子传输机制[J]. 发光学报, 2012,33(4): 428-432 DOI： 10.3788/fgxb20123304.0428.

WU Yan-yu, ZHANG Xiao-song, XU Jian-ping, NIU Xi-ping, LUO Cheng-yuan, LI Mei-hui, LI Ping, SHI Qing-liang, LI Lan. Memory Effect and Charge-transport Mechanisms of Write-once-read-many-times Bistable Devices Based on ZnS Quantum Dots Embedded in Poly-4-vinyl-phenol Layer[J]. Chinese Journal of Luminescence, 2012,33(4): 428-432 DOI： 10.3788/fgxb20123304.0428.

摘要

用ZnS量子点与poly-4-vinyl-phenol (PVP)复合

通过简单的旋涂法制备了结构为ITO/ZnS:PVP/Al的一次写入多次读取(WORM)的有机双稳态器件。器件起始状态为OFF态

通过正向电压的作用

器件由OFF态转变为ON态

并且在正向或反向电压的作用下

器件始终保持在ON态

表现出良好的一次写入多次读取的存储特性。与不含ZnS量子点的器件相比

含有ZnS量子点的器件表现出明显的双稳态特性

其电流开关比达到10

这说明ZnS量子点在器件中起到存储介质的作用。通过对器件电流-电压(

I-V

)特性的测试

详细讨论了器件的双稳态特性以及载流子传输机制

并且用不同的传导理论模型分析了器件在ON态和OFF态的电流传导机制。器件

I-t

曲线表明器件在大气环境中具有良好的永久保持特性。

Abstract

A write-once-read-many-times (WORM) bistable device was prepared

in which ZnS quantum dots doped poly-4-vinyl-phenol (PVP) layer was sandwiched between ITO anode and Al cathode. Current-voltage (

I-V

) curves showed a switching characteristic with a large ON/OFF ratio of 10

. The electrical bistability properties and charge-transport mechanisms were discussed in detail based on

I-V

characteristics. The conduction mechanisms in both ON- and OFF-states were discussed in terms of different theoretical models. The data-retention characteristics of the current-time (

I-t

) curve exhibited permanent retention ability at ambient conditions.

关键词

Keywords

references

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