Improved Performance of Organic Light Emitting Diodes Using Combined Hole-injecting Layer

LIU Ai-hua; YANG Li-ying

doi:10.3788/fgxb20123304.0422

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Improved Performance of Organic Light Emitting Diodes Using Combined Hole-injecting Layer

paper | 更新时间：2020-08-12

- Improved Performance of Organic Light Emitting Diodes Using Combined Hole-injecting Layer
- Chinese Journal of Luminescence Vol. 33, Issue 4, Pages: 422-427(2012)
- 作者机构：
  
  1. 天津市光电显示材料与器件重点实验室天津,300384
  2. 天津理工大学理学院天津,300384
  3. 天津理工大学显示材料与光电器件省部共建教育部重点实验室天津,300384
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20123304.0422
  CLC： TN383+.1
- Received：04 December 2011，
  
  Revised：16 February 2012，
  
  Published Online：10 April 2012，
  
  Published：10 April 2012
- 稿件说明：
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刘爱华, 杨利营. 采用复合空穴注入层提高有机电致发光器件的性能[J]. 发光学报, 2012,33(4): 422-427

LIU Ai-hua, YANG Li-ying. Improved Performance of Organic Light Emitting Diodes Using Combined Hole-injecting Layer[J]. Chinese Journal of Luminescence, 2012,33(4): 422-427
刘爱华, 杨利营. 采用复合空穴注入层提高有机电致发光器件的性能[J]. 发光学报, 2012,33(4): 422-427 DOI： 10.3788/fgxb20123304.0422.

LIU Ai-hua, YANG Li-ying. Improved Performance of Organic Light Emitting Diodes Using Combined Hole-injecting Layer[J]. Chinese Journal of Luminescence, 2012,33(4): 422-427 DOI： 10.3788/fgxb20123304.0422.

摘要

制备了以Ag/SAM/m-MTDATA为复合空穴注入层的NPB/Alq

双层异质结发光器件

研究了器件的性能并与传统的器件进行了对比。考察了银膜厚度的变化对器件性能的影响。研究了光谱窄化以及微腔效应对器件的影响。研究结果表明:在ITO表面制备4-FTP自组装单分子膜修饰的5 nm厚的金属银膜

可以在保持阳极透明性的基础上

增强空穴的注入

改善界面的形貌

进而提高器件性能。制备的ITO/Ag/SAM/m-MTDATA/NPB/Alq

/LiF/Al器件的启亮电压为4 V

最大电流效率为6.9 cd/A

最大亮度为34 680 cd/m

(12 V);优于以ITO为阳极的对比器件(25 300 cd/m

@12 V)。

Abstract

A double layer NPB/Alq

heterojunction organic light emitting device using Ag/4-FTP(SAM)/m-MTDATA as combined hole-injecting layer was fabricated. The device performance was studied and compared with the control device. The effect of the Ag layer thickness on the device performance is also investigated. The variation of the spectral narrowing and intensity enhancement can be explained with microcavity effects. The results revealed that indium tin oxide (ITO) anode modified with Ag(5 nm)/ 4-FTP(SAM) demonstrated good transparency

enhanced hole injection ability and smooth interface morphology

which result in an improved device performance. The highest luminance of 34 680 cd/m

at 12 V and a luminous efficiency of 6.9 cd/A were achieved for the device with the structure of ITO/Ag/4-FTP(SAM)/m-MTDATA/NPB/Alq

/LiF/Al. However

the control device showed 25 300 cd/m

at the same bias.

关键词

Keywords

references

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